【摘要】：OTP存儲器，即一次可編程存儲器，具有數(shù)據(jù)永久保存、功耗低、結(jié)構(gòu)簡單、速度快等特點，因而大量應(yīng)用在SOC系統(tǒng)中作為嵌入式存儲器，用來儲存系統(tǒng)配置信息、參數(shù)值、校準表、代碼等各種不需要交換或者交換頻率極低的數(shù)據(jù)。目前市場上主要有兩種OTP存儲器,熔絲型和反熔絲型。傳統(tǒng)的OTP存儲器制作工藝復(fù)雜，需要特殊的材料，使之難以應(yīng)用在SOC系統(tǒng)中。 本文針對以上原因，設(shè)計適合于SOC系統(tǒng)集成的OTP存儲器。本文針對深亞微米工藝下OTP存儲器的編程問題，進行了電荷泵系統(tǒng)的設(shè)計，為OTP存儲器燒錄時提供編程高壓。在設(shè)計電荷泵系統(tǒng)時以如何產(chǎn)生位線編程電壓為主線。首先對常用的產(chǎn)生高壓的結(jié)構(gòu)進行了分析，得出適合作為產(chǎn)生OTP存儲器編程高壓的電荷泵電路。其次對常用的經(jīng)典的電荷泵類型進行了理論分析，對比它們的優(yōu)缺點，再結(jié)合OTP存儲器一次編程的特點，最終采用了兩閾值開關(guān)電荷泵電路結(jié)構(gòu)。同時在設(shè)計電荷泵系統(tǒng)的過程中遵循以下原則。其一，避免在編程過程中產(chǎn)生超過普通管子承受范圍的擊穿電壓，保證電荷泵系統(tǒng)在編程過程中正常工作。其二，圍繞提高編程成功率、減小芯片面積、減小燒錄時位線電壓紋波進行設(shè)計。其三，，提高編程結(jié)點的讀出范圍，避免基本單元擊穿后阻值的非線性導(dǎo)致存儲數(shù)據(jù)誤讀。 設(shè)計出的電荷泵系統(tǒng)，在仿真時具有以下特點，內(nèi)部高壓結(jié)點低于普通CMOS管的介質(zhì)擊穿電壓，編程時位線電壓紋波小，整個芯片編程成功率高，數(shù)據(jù)讀出范圍大。最終設(shè)計的OTP存儲器電荷泵系統(tǒng)在商用工藝上得到了流片驗證，設(shè)計的OTP存儲器能正確編程。
[Abstract]:OTP memory, that is, primary programmable memory, has the characteristics of permanent data storage, low power consumption, simple structure, fast speed and so on. Therefore, it is widely used as embedded memory in SOC system to store system configuration information and parameter values. Calibration tables, codes, etc., do not need to exchange or exchange very low frequency of data. At present, there are two kinds of OTP memory in the market, fuse type and anti-fuse type. The traditional OTP memory has complex fabrication process and needs special materials, which makes it difficult to be applied in SOC system. For the above reasons, this paper designs a OTP memory suitable for SOC system integration. Aiming at the programming problem of OTP memory in deep submicron process, the charge pump system is designed in this paper, which provides programming high voltage for OTP memory burning. How to generate bit line programming voltage is the main line in the design of charge pump system. Firstly, the common structure of generating high voltage is analyzed, and the charge pump circuit which is suitable for generating high voltage of OTP memory programming is obtained. Secondly, the classical charge pump types are analyzed theoretically, and their advantages and disadvantages are compared. combined with the characteristics of OTP memory programming, the circuit structure of two threshold switching charge pump is finally adopted. At the same time, the following principles are followed in the design of charge pump system. First, to avoid the breakdown voltage beyond the common pipe bearing range in the programming process, to ensure the normal operation of the charge pump system in the programming process. Secondly, the design is carried out to improve the success rate of programming, reduce the chip area and reduce the voltage ripples of burning time line. Thirdly, the readout range of programming nodes is improved, and the nonlinear resistance value of the basic unit after breakdown leads to the misreading of the stored data. The designed charge pump system has the following characteristics in simulation: the internal high voltage node is lower than the dielectric breakdown voltage of the ordinary CMOS tube, the voltage grain of the programming timing line is small, the success rate of the whole chip programming is high, and the data readout range is wide. Finally, the OTP memory charge pump system has been verified by the commercial process, and the designed OTP memory can be programmed correctly.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2012
【分類號】：TP333;TN47

【共引文獻】

相關(guān)碩士學(xué)位論文 前1條

1 楊清寶;嵌入式SRAM的高速、低功耗設(shè)計及優(yōu)化[D];西安電子科技大學(xué);2007年

本文編號：2493246