【摘要】：聚偏二氟乙烯(PVDF)以及二氟乙烯、三氟乙烯的共聚物P(VDF-TrFE),具有自發(fā)極化強(qiáng)度相對(duì)高、極化穩(wěn)定性強(qiáng)、極化翻轉(zhuǎn)時(shí)間短等優(yōu)點(diǎn),以及其柔性、兼容性以及易制備性,在世界范圍內(nèi)受到越來越多的關(guān)注。用鐵電聚合物薄膜制備的非易失性存儲(chǔ)器,與半導(dǎo)體集成工藝擁有很好的兼容性,具有柔性、高存儲(chǔ)密度、低成本、低功耗、快速讀寫等特點(diǎn),有著廣闊的應(yīng)用前景和極大的應(yīng)用市場(chǎng)。 本文基于鐵電聚合物,分別制備了鐵電薄膜柔性電容結(jié)構(gòu)、鐵電／緩沖層復(fù)合電容結(jié)構(gòu),以及鐵電場(chǎng)效應(yīng)晶體管(FeFET)結(jié)構(gòu),分別表征其形貌結(jié)構(gòu)和電學(xué)性能,確定了基板彎曲對(duì)鐵電膜的影響。主要研究?jī)?nèi)容包括： 1、研究了基板彎曲對(duì)柔性鐵電薄膜電容結(jié)構(gòu)電學(xué)性能的影響。利用Sawyer-Tower電路測(cè)定薄膜在不同曲率彎曲下的電學(xué)性能,給出電滯回線和開關(guān)特性曲線,分析了鐵電膜矯頑場(chǎng)、剩余極化、電學(xué)保持能力、抗疲勞性能和漏電流隨基板彎曲的改變。 2、研究了鐵電／緩沖層復(fù)合電容結(jié)構(gòu)的電學(xué)性能,獲得改善的電性能。制備不同厚度的鐵電／緩沖層復(fù)合電容結(jié)構(gòu),同樣利用Sawyer-Tower電路測(cè)定薄膜的電學(xué)性能,主要針對(duì)保持性能和漏電流的改善進(jìn)行了比較和分析。 3、研究并比較了鐵電場(chǎng)效應(yīng)晶體管(FeFET)結(jié)構(gòu)的輸出特性和轉(zhuǎn)移特性。在氧化物半導(dǎo)體MOS結(jié)構(gòu)的基礎(chǔ)上,結(jié)合鐵電膜旋涂工藝,制備場(chǎng)效應(yīng)晶體管,優(yōu)化結(jié)構(gòu)參數(shù),以改善存儲(chǔ)結(jié)構(gòu)的存儲(chǔ)性能和電學(xué)穩(wěn)定性,測(cè)試其輸出和轉(zhuǎn)移特性曲線,研究鐵電薄膜對(duì)閾值電壓的調(diào)制、半導(dǎo)體載流子遷移率和器件存儲(chǔ)開關(guān)比。
[Abstract]:The polymer P (VDF-TrFE) of polyvinylidene fluoride (PVDF) and difluoroethylene and trifluoroethylene has the advantages of relatively high spontaneous polarization intensity, strong polarization stability and short polarization reversal time, as well as its flexibility, compatibility and easy preparation. More and more attention has been paid to it all over the world. The nonvolatile memory prepared from ferroelectric polymer thin films has good compatibility with semiconductor integrated technology, and has the characteristics of flexibility, high storage density, low cost, low power consumption, fast reading and writing, etc. It has a broad application prospect and a great application market. In this paper, ferroelectric thin film flexible capacitance structure, ferroelectric / buffer layer composite capacitance structure and ferroelectric field effect transistor (FeFET) structure were prepared based on ferroelectric polymer, and their morphology and electrical properties were characterized respectively. The effect of substrate bending on ferroelectric film was determined. The main research contents are as follows: 1. The effect of substrate bending on the electrical properties of flexible ferroelectric thin film capacitors is studied. The electrical properties of thin films under different curvature bending are measured by Sawyer-Tower circuit. The hysteretic loop and switching characteristic curves are given. The coercive field, residual polarization and electrical retention ability of ferroelectric films are analyzed. The fatigue resistance and leakage current change with the bending of the substrate. 2. The electrical properties of ferroelectric / buffer layer composite capacitor structure are studied, and the improved electrical energy is obtained. Ferroelectric / buffer layer composite capacitor structures with different thickness were prepared. The electrical properties of the films were also measured by Sawyer-Tower circuit. The improvement of retention performance and leakage current was compared and analyzed. 3. The output and transfer characteristics of ferroelectric field effect transistor (FeFET) structure are studied and compared. On the basis of oxide semiconductor MOS structure, combined with ferroelectric film spin coating process, the field effect transistor is prepared, and the structural parameters are optimized to improve the storage performance and electrical stability of the storage structure, and the output and transfer characteristic curves are tested. The modulation of threshold voltage, semiconductor carrier mobility and device memory switching ratio of ferroelectric thin films are studied.
【學(xué)位授予單位】：復(fù)旦大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2012
【分類號(hào)】：TN386;TP333

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