【摘要】：隨著航空領(lǐng)域事業(yè)的飛速成長(zhǎng),靜態(tài)隨機(jī)存儲(chǔ)器(Static Random Memory,SRAM)憑借著其功耗低、速度快的優(yōu)點(diǎn)而被廣泛應(yīng)用到空間環(huán)境中,如宇宙飛船和空間衛(wèi)星的控制系統(tǒng)等。太空環(huán)境中充滿著多種具有輻射功能的粒子,其產(chǎn)生的輻射作用對(duì)電子設(shè)備上的存儲(chǔ)器件造成不同程度的毀壞,對(duì)設(shè)備的性能和壽命產(chǎn)生嚴(yán)重影響。隨著IC電路特征尺寸的降低和集成度的提高,對(duì)處在太空環(huán)境中的靜態(tài)隨機(jī)存儲(chǔ)器提出了更多的要求,即在保證高速低耗的同時(shí),還要具備抗粒子輻射的能力。本文分析了靜態(tài)隨機(jī)存儲(chǔ)器的基本工作原理以及空間輻射效應(yīng)對(duì)其產(chǎn)生的影響。輻射效應(yīng)主要分為單粒子效應(yīng)和總劑量效應(yīng),由于本文采用的是0.18um工藝,總劑量效應(yīng)對(duì)器件的影響可以忽略不計(jì)。本文關(guān)于SRAM的抗輻射加固設(shè)計(jì)方案主要是對(duì)單粒子效應(yīng)進(jìn)行討論的,先是研究分析了工藝級(jí)加固、系統(tǒng)級(jí)加固和電路級(jí)加固的三種加固方案的抗單粒子效應(yīng)的工作機(jī)理,然后討論方案的可行性及其實(shí)施的難易程度。存儲(chǔ)單元作為SRAM最重要組成部分,對(duì)芯片的面積、穩(wěn)定性、可靠性、功耗和速度等產(chǎn)生較大的影響,為此SRAM的抗輻射加固設(shè)計(jì)主要是針對(duì)存儲(chǔ)單元進(jìn)行的加固設(shè)計(jì)。雙立互鎖存儲(chǔ)單元(Dual Interlocked Storage Cell,DICE)因其較強(qiáng)抗單粒子翻轉(zhuǎn)能力而廣泛應(yīng)用于SRAM存儲(chǔ)單元的加固中。但在讀寫狀態(tài)下,DICE結(jié)構(gòu)存儲(chǔ)單元會(huì)發(fā)生抗單粒子效應(yīng)失效的情況,為此,本文所設(shè)計(jì)的SRAM加固方案采用的是改進(jìn)的DICE結(jié)構(gòu)的存儲(chǔ)單元——即采用讀寫分離的DICE結(jié)構(gòu);其次對(duì)SRAM的行列/譯碼電路、讀/寫預(yù)充電路、靈敏放大電路、讀/寫通路進(jìn)行加固設(shè)計(jì),并仿真驗(yàn)證各電路功能的正確性。最后基于0.18um工藝,完成了4K*32位SRAM整體電路讀寫功能驗(yàn)證、抗輻射性能驗(yàn)證、端口和時(shí)序功能驗(yàn)證等;完成存儲(chǔ)單元和外圍電路的基本功能仿真驗(yàn)證、抗輻射性能驗(yàn)證等。在1.8V電壓條件下,仿真結(jié)果表明本文加固設(shè)計(jì)的SRAM能夠在75MHz頻率下正常工作,并保持良好的性能。
[Abstract]:With the rapid development of aviation industry, static random access memory (Static Random Memory,SRAM) is widely used in space environment, such as spacecraft and space satellite control system, because of its advantages of low power consumption and high speed. The space environment is full of many kinds of particles with radiation function. The radiation effects on the storage devices on electronic devices cause varying degrees of destruction, and have a serious impact on the performance and lifetime of the devices. With the decrease of the characteristic size and the improvement of the integration of IC circuits, the static random access memory in the space environment is required, that is, the ability to resist particle radiation while ensuring high speed and low consumption. In this paper, the basic working principle of static random access memory and the effect of space radiation on it are analyzed. The radiation effect is mainly divided into single particle effect and total dose effect. Since the 0.18um process is used in this paper, the total dose effect on the device can be ignored. In this paper, the single particle effect is mainly discussed in the design of radiation resistant reinforcement of SRAM. Firstly, the working mechanism of the three reinforcement schemes, which are process grade reinforcement, system level reinforcement and circuit level reinforcement, is studied and analyzed. Then the feasibility of the scheme and the degree of difficulty in its implementation are discussed. As the most important part of SRAM, memory cell has a great impact on the area, stability, reliability, power consumption and speed of the chip. Therefore, the design of anti-radiation reinforcement of SRAM is mainly aimed at the reinforcement design of memory cell. Double-stand interlocking memory cell (Dual Interlocked Storage Cell,DICE) is widely used in the reinforcement of SRAM memory cells because of its strong anti-single particle flip ability. However, under the condition of reading and writing, the memory cell of dice structure will fail against single particle effect. For this reason, the SRAM reinforcement scheme designed in this paper adopts the memory cell of the improved DICE structure, that is, the DICE structure which is separated from the read and write structure. Secondly, the column / decode circuit, read / write precharge circuit, sensitive amplifier circuit and read / write path of SRAM are designed, and the correctness of each circuit is verified by simulation. Finally, based on 0.18um process, the 4K*32 bit SRAM integrated circuit reading and writing function verification, anti-radiation performance verification, port and timing function verification, memory cell and peripheral circuit basic function simulation verification, anti-radiation performance verification and so on. At 1.8 V voltage, the simulation results show that the designed SRAM can work normally at 75MHz frequency and maintain good performance.
【學(xué)位授予單位】：江南大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TP333

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