【摘要】：基于固液界面反應的有機高穩(wěn)定電存儲器件 有機電存儲器件是指器件在相同電壓下可以存在兩種不同的電阻態(tài),相當于存儲器中的“0”態(tài)和“1”態(tài),可廣泛應用在數(shù)字信息存儲器和電路開關之中；而固、液界面反應的方法則是一種新型薄膜制備工藝,它具有工藝簡單、制膜均勻、易大面積制備等優(yōu)點。因此基于固、液界面反應的有機電存儲器件具有低成本、工藝簡單、易于大面積制作和可折疊等各種優(yōu)點,這為信息產業(yè)制造技術提供了新的發(fā)展方向,并有望最終替代無機材料,從而得到廣泛的關注。 本文主要研究了有機材料DMcT分子,我們利用界面反應的方法制備了兩種可用于電存儲器件的新型功能層薄膜,并對功能層薄膜進行了相應研究,繼而通過工藝改進來提高器件性能,最終得到了兩種具備高穩(wěn)定性能的一次寫入多次讀取(WORM)電存儲器件。我們對器件的功能層、界面等進行了初步研究,提出了相應的成膜機理以及器件的開關機制。本文具體工作如下： 1、利用分子自組裝技術在Al膜表面制備單分子層薄膜DMcT,研究了基于分子自組裝技術的電存儲器件Al/DMcT/Cu,對器件的制備工藝、基本電學性能、薄膜特性、界面特性等進行了相應研究,通過各種分析測試提出器件的filament模型導電機制；并對器件進行延伸拓展,在固、液界面反應方向進行了大量嘗試探索,以期獲得高性能的電存儲器件。 2、利用固、液界面原位反應的方法制備了Cu-DMcT配位聚合物薄膜,制備成電存儲器件Cu/DMcT/Al,發(fā)現(xiàn)器件具備良好的電存儲特性,對器件制備工藝進行大量改進嘗試,改善了器件存儲性能,并通過各種分析表征手段對器件開關機制進行了討論分析。 附錄“動態(tài)”分子整流器研究 本實驗室之前已經對“動態(tài)”分子整流現(xiàn)象進行過一定研究探討,本論文主要工作內容為：在實驗室之前研究的基礎上,對于“動態(tài)”分子高整流比現(xiàn)象進行了大量的統(tǒng)計驗證。
[Abstract]:Organic high stability electrical memory devices based on solid-liquid interface reaction have electromechanical storage devices, which refer to the existence of two different resistance states at the same voltage, equivalent to the "0" and "1" states in the memory. It can be widely used in digital information memory and circuit switch, but the method of solid-liquid interface reaction is a new kind of thin film preparation technology, which has the advantages of simple process, uniform film preparation and easy preparation in large area. Therefore, electromechanical memory devices based on solid-liquid interface reaction have many advantages, such as low cost, simple process, easy to fabricate in large area and foldable, which provides a new development direction for manufacturing technology in information industry. And it is expected to replace inorganic materials, and thus get wide attention. In this paper, we mainly study the organic material DMcT molecule. We have prepared two new functional layer thin films which can be used in electric memory devices by the method of interfacial reaction, and have carried on the corresponding research to the functional layer thin film. Then through the process improvement to improve the performance of the device, finally two kinds of high stability write multiple read (WORM) electronic memory devices are obtained. We have studied the functional layer and interface of the device, and put forward the corresponding film forming mechanism and the switch mechanism of the device. The main work of this paper is as follows: 1. The fabrication process and basic electrical properties of monolayer thin film (DMcT,) based on molecular self-assembly (MSAM) were studied by preparing monolayer thin film DMcT, on the surface of Al films, and the basic electrical properties of Al/DMcT/Cu, based on molecular self-assembly technology were studied. The film characteristics and interface characteristics are studied, and the conductive mechanism of filament model is put forward through various analyses and tests, and the devices are extended and explored in the reaction direction of solid and liquid interface. In order to obtain high performance electric storage devices. 2, Cu-DMcT coordination polymer films were prepared by in situ reaction of solid and liquid interfaces, and Cu/DMcT/Al, devices were prepared. A large number of attempts were made to improve the fabrication process of the device and the storage performance of the device was improved. The mechanism of the device switch was discussed and analyzed by various means of analysis and characterization. The "dynamic" molecular rectifier has been studied and discussed in this laboratory before the study of the "dynamic" molecular rectifier. The main work of this paper is: based on the research before the laboratory, The phenomenon of "dynamic" molecular high rectifier ratio is verified by a large number of statistics.
【學位授予單位】：復旦大學
【學位級別】：碩士
【學位授予年份】：2012
【分類號】：O484.1;TP333

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