【摘要】：隨著科學(xué)技術(shù)的進(jìn)步，半導(dǎo)體制造工藝水平的提高，信息產(chǎn)業(yè)得到了快速發(fā)展。信息存儲(chǔ)作為信息技術(shù)的一部分也得到了空前進(jìn)步，存儲(chǔ)器正朝著集成度不斷提高、外觀更加精巧、重量更輕、存取速度更快、存儲(chǔ)容量不斷增大的方向發(fā)展。傳統(tǒng)意義上的存儲(chǔ)器是基于晶體管對(duì)電荷的存儲(chǔ)而制造的，許多時(shí)候無(wú)法滿足信息技術(shù)迅速發(fā)展的需要，因此尋找一種高密度、非揮發(fā)性，低功耗的下一代存儲(chǔ)器已經(jīng)迫在眉睫。現(xiàn)階段更多的研究者們把關(guān)注的重點(diǎn)放在非易失性存儲(chǔ)器上，例如鐵電存儲(chǔ)器，磁存儲(chǔ)器，相變存儲(chǔ)器、電阻存儲(chǔ)器。在這些存儲(chǔ)器中，阻變存儲(chǔ)器因自身的許多優(yōu)點(diǎn)普遍受到了人們的廣泛關(guān)注，它具有結(jié)構(gòu)簡(jiǎn)單、讀寫(xiě)速度快、制造成本低、功耗低、單個(gè)器件可縮小至數(shù)十納米等特點(diǎn)，在眾多的絕緣材料和半導(dǎo)體材料中紛紛發(fā)現(xiàn)這種新奇的電阻開(kāi)關(guān)效應(yīng)。隨著研究的不斷進(jìn)行，我們發(fā)現(xiàn)了阻變存儲(chǔ)器許多新的有趣的現(xiàn)象：?jiǎn)螛O性電阻開(kāi)關(guān)和雙極性電阻開(kāi)關(guān)在一定的限制條件下可以相互轉(zhuǎn)化；阻變存儲(chǔ)器電學(xué)性質(zhì)I-V曲線的順時(shí)針旋轉(zhuǎn)和逆時(shí)針的旋轉(zhuǎn)受到電形成過(guò)程的影響，可以通過(guò)控制電形成過(guò)程來(lái)控制其旋轉(zhuǎn)方向；我們?cè)谧枳兇鎯?chǔ)器的研究中發(fā)現(xiàn)了無(wú)極性電阻開(kāi)關(guān)和非常規(guī)雙極性電阻開(kāi)關(guān)的存在，同時(shí)得出非常規(guī)雙極性電阻開(kāi)關(guān)在合適的條件下可以轉(zhuǎn)化為常規(guī)性雙極性電阻開(kāi)關(guān)。這些現(xiàn)象的發(fā)現(xiàn)能夠?yàn)檠芯空吒娴牧私怆娮栝_(kāi)關(guān)的形成機(jī)制提供很好的幫助。然而迄今為止，還沒(méi)有哪一個(gè)理論模型能對(duì)這些現(xiàn)象作出一個(gè)完整清晰的解釋?zhuān)碚摲治鲞�比較欠缺，仍有大量工作要做。本論文通過(guò)激光脈沖技術(shù)(PLD)制備了薄膜電阻開(kāi)關(guān)器件，通過(guò)改變襯底條件，引入光照等方法來(lái)具體研究阻變存儲(chǔ)器的機(jī)制，另外，本人在對(duì)電阻開(kāi)關(guān)實(shí)現(xiàn)邏輯門(mén)電路的研究中有些新的想法和研究結(jié)果。本論文主要內(nèi)容包括以下幾個(gè)方面： 1．采用脈沖激光沉積技術(shù)制備了Au/STO/Pt結(jié)構(gòu)的阻變存儲(chǔ)器件，通過(guò)X射線衍射儀(XRD)、掃描電子顯微鏡(SEM)、原子力顯微鏡(AFM)分析薄膜的特性。之后應(yīng)用Keiythley2400對(duì)阻變器件進(jìn)行電學(xué)性能測(cè)試，在經(jīng)歷了Electroforming電壓操作后，阻變器件表現(xiàn)出良好的開(kāi)關(guān)性能，包括較低的閾值電壓、良好的抗疲勞性和保持特性。根據(jù)測(cè)得的電學(xué)性質(zhì)I-V曲線，應(yīng)用缺陷和氧空位之間捕獲和去捕獲理論來(lái)解釋所得到的雙極性電阻開(kāi)關(guān)性質(zhì)。另外，根據(jù)雙極性電阻開(kāi)關(guān)的特點(diǎn)和優(yōu)勢(shì)，構(gòu)造適當(dāng)?shù)倪壿嬛�，在前人的基礎(chǔ)之上，利用簡(jiǎn)單的阻變存儲(chǔ)器來(lái)實(shí)現(xiàn)數(shù)據(jù)存取，結(jié)合現(xiàn)代隨機(jī)存儲(chǔ)器的結(jié)構(gòu)和新型阻變存儲(chǔ)器的工藝，實(shí)現(xiàn)新型阻變存儲(chǔ)器的構(gòu)造，并將阻變存儲(chǔ)器與晶體管存儲(chǔ)器進(jìn)行簡(jiǎn)單的比較，在芯片功能，引腳作用，如何實(shí)現(xiàn)存儲(chǔ)方面進(jìn)行了介紹。 2．制備了Au/Nb:STO/Pt和Au/Nb:STO/FTO三明治結(jié)構(gòu)阻變存儲(chǔ)器，通過(guò)各種表征手法分析兩種存儲(chǔ)器結(jié)構(gòu)上的異同，分別測(cè)量它們的電學(xué)I-V曲線，由于襯底的不同曲線趨勢(shì)會(huì)有明顯差異，對(duì)阻變存儲(chǔ)器的性質(zhì)產(chǎn)生了一定影響，，這是因?yàn)�，肖特基�?shì)壘在阻變開(kāi)關(guān)現(xiàn)象中起到了重要作用。使用LED陣列燈光對(duì)器件進(jìn)行照射，觀測(cè)兩種不同器件在光照后表現(xiàn)出來(lái)的共同特征，并根據(jù)理論基礎(chǔ)解釋這個(gè)現(xiàn)象。通過(guò)不同的激發(fā)電壓和限制電流來(lái)實(shí)現(xiàn)阻變開(kāi)關(guān)器由雙極性向單極性的轉(zhuǎn)換，同時(shí)，我們知道如果設(shè)置限制電流在使在第一個(gè)形成過(guò)程產(chǎn)生了足夠的熱量，同樣可以使電阻開(kāi)關(guān)達(dá)到金屬導(dǎo)電絲的低電阻狀態(tài)，器件會(huì)立刻產(chǎn)生單極性電阻開(kāi)關(guān)的性質(zhì)。根據(jù)一系列的實(shí)驗(yàn)結(jié)論，結(jié)合前人提出的理論模型，對(duì)阻變存儲(chǔ)器的機(jī)制進(jìn)行全面的分析和解釋。
[Abstract]:With the development of science and technology and the improvement of semiconductor manufacturing technology, the information industry has developed rapidly. As a part of information technology, information storage has also made unprecedented progress. Traditionally, memory is based on the transistor's charge storage, which can not meet the needs of the rapid development of information technology in many cases. Therefore, it is urgent to find a high density, non-volatile, low-power next-generation memory. Among these memories, resistive memory has attracted much attention because of its many advantages, such as simple structure, fast read-write speed, low manufacturing cost, low power consumption, single device can be reduced to tens of nanometers, and so on. This novel resistance switching effect has been found in materials and semiconductors. With the development of research, many interesting new phenomena have been discovered: unipolar resistance switches and bipolar resistance switches can be transformed into each other under certain restrictive conditions; the electrical properties of resistive memory I-V curves are clockwise. Needle rotation and counterclockwise rotation are affected by the electric forming process, and the direction of rotation can be controlled by controlling the forming process. We found the existence of non-polar resistance switch and unconventional bipolar resistance switch in the research of resistance-variable memory, and obtained that unconventional bipolar resistance switch can be used under appropriate conditions. The discovery of these phenomena can help researchers to understand the formation mechanism of resistance switches more comprehensively. However, so far, no theoretical model can give a complete and clear explanation for these phenomena. Theoretical analysis is still lacking, and much work remains to be done. In this paper, thin film resistive switching devices are fabricated by laser pulse technology (PLD). The mechanism of resistive memory is studied by changing substrate conditions and introducing illumination. In addition, I have some new ideas and research results in the research of resistive switching logic gate circuit. Noodles:
1. The resistive memory devices with Au/STO/Pt structure were fabricated by pulsed laser deposition. The properties of the films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The electrical properties of the resistive devices were tested by Keiythley 2400. After the operation of the electroforming voltage, the resistive devices were tested. It shows good switching performance, including low threshold voltage, good fatigue resistance and retention characteristics. According to the measured electrical properties I-V curves, the obtained bipolar resistance switching properties are explained by the theory of trapping and de-trapping between defect and oxygen vacancy. When the logic value, on the basis of predecessors, using a simple resistive memory to achieve data access, combining the structure of modern random access memory and new resistive memory technology, to achieve a new resistive memory structure, and resistive memory and transistor memory for a simple comparison, in the chip function, pin role, how The storage aspect is introduced.
2. Au/Nb:STO/Pt and Au/Nb:STO/FTO sandwich structure resistive memory are fabricated. The similarities and differences between the two memory structures are analyzed by various characterization methods. The electrical I-V curves of the two memory structures are measured respectively. The different trend of the substrate curves will have obvious differences, which has a certain impact on the properties of resistive memory because of Schottky potential. The barrier plays an important role in the resistance switching phenomenon. The LED array lamp is used to illuminate the device and observe the common characteristics of the two different devices after illumination. We know that if the limiting current is set to generate enough heat in the first formation process, the resistance switch can also be made to the low resistance state of the metal conductive wire, and the device will immediately produce the properties of the unipolar resistance switch. The mechanism is comprehensively analyzed and explained.
【學(xué)位授予單位】：河南大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2012
【分類(lèi)號(hào)】：TP333

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