【摘要】：磁隨機存儲器MRAM（Magnetic RandomAccess Memory）是一種非易失性存儲器，其原理是利用TMR或GMR的高和低兩種電阻穩(wěn)態(tài)進行信息的存儲。MRAM作為一種新型的數(shù)據(jù)存儲器，與其他隨機存儲器相比具有許多明顯的優(yōu)勢：高的集成度、高速讀取寫入能力、重復(fù)可讀寫次數(shù)近乎無窮大、低功耗和高抗輻射能力以及最為突出的非易失性。它的應(yīng)用會開啟固態(tài)數(shù)據(jù)信息存儲技術(shù)的新時代。 本文重點研究基于TMR效應(yīng)的磁隨機存儲器存儲單元結(jié)構(gòu)的微納米制備工藝。論文首先介紹了磁隨機存儲器存儲單元功能層材料的選擇，隨后介紹了其存儲單元的常用工藝制備方法，并根據(jù)實驗的需要對其TMR單元結(jié)構(gòu)加以改進，設(shè)計了新的單元結(jié)構(gòu)，在此基礎(chǔ)上，，并結(jié)合實驗室條件，設(shè)計了本研究擬采用的工藝制備方法，在經(jīng)過反復(fù)實驗后總結(jié)出最佳工藝制備流程。通過微納米制造平臺進行工藝制備，對制作出的樣品進行物理特性測試發(fā)現(xiàn)每個單元都產(chǎn)生了明顯的TMR效應(yīng)，且磁阻變化率在9%~17%，測試結(jié)果表明工藝在實驗上是成功的。最后對實驗結(jié)果進行了理論分析，指出了對結(jié)果造成影響的幾個主要因素，并對今后存儲器存儲單元的制備提出了展望。 具有TMR效應(yīng)的MRAM存儲單元的成功制備，為進一步深入研究MTJ的材料、MTJ新結(jié)構(gòu)及MRAM存儲單元的讀寫特性優(yōu)化提供了切實可行的實現(xiàn)經(jīng)驗。
[Abstract]:Magnetic random access memory (MRAM (Magnetic RandomAccess Memory) is a kind of nonvolatile memory. Its principle is to use TMR or GMR to store information in high and low resistor steady-state as a new type of data memory. Compared with other random access memory, it has many obvious advantages: high integration, high reading and writing ability, almost infinity of repetition, low power consumption and high radiation resistance, and the most prominent non-volatile. Its application will open a new era of solid-state data storage technology. In this paper, we focus on the fabrication process of magnetic random access memory cell structure based on TMR effect. In this paper, the selection of functional layer materials for memory cells of magnetic random access memory (RAM) is first introduced, and then the common fabrication methods of the memory cells are introduced. The TMR cell structure is improved according to the need of experiments, and a new cell structure is designed. On the basis of this, combined with the laboratory conditions, the process preparation method was designed, and the optimum process was summarized after repeated experiments. The physical properties of the prepared samples were tested on a micro and nano manufacturing platform. It was found that each unit had obvious TMR effect and the change rate of magnetoresistive was 9 / 17. The test results showed that the process was successful in experiment. Finally, the experimental results are theoretically analyzed, and several main factors affecting the results are pointed out, and the prospects for the preparation of memory cells in the future are put forward. The successful preparation of MRAM memory cells with TMR effect provides practical experience for further research on the new structure of MTJ materials and the optimization of the reading and writing characteristics of MRAM memory cells.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2012
【分類號】：TP333

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