發(fā)布時間：2018-08-09 07:44

【摘要】：現(xiàn)代社會是信息化的社會，信息化社會離不開對信息的存儲，所以存儲器在我們的生活中的應(yīng)用越來越廣泛。在SoC芯片中，存儲器所占據(jù)的比重在逐漸增加。據(jù)估計，到2016年，SoC芯片總面積的95％以上將被嵌入式存儲器所占據(jù)。在眾多種類的存儲器中，F(xiàn)lash作為一種非易失性存儲器，以其掉電后仍能保持?jǐn)?shù)據(jù)的特點倍受青睞。Flash存儲器容量的不斷增加，，集成度的不斷提高，導(dǎo)致其缺陷越來越多，對其的測量也就越來越困難。此外，機(jī)臺測試的費用由于SoC芯片管腳和速度的增加，變得越來越高昂。所以本文針對以上問題對SoC嵌入式Flash內(nèi)建自測試方法進(jìn)行了研究。 本論文首先介紹了Flash存儲器的基本結(jié)構(gòu)和工作原理，結(jié)合其結(jié)構(gòu)和工作原理對存儲器的固有故障和Flash的特有故障進(jìn)行了分析和研究。固有故障包括：固定故障、轉(zhuǎn)換故障和橋接故障等，特有故障包括：直流寫(DC-Programming)、直流擦(DC-Erasure)和漏極干擾(DrainDisturbance)等。通過對這些故障產(chǎn)生機(jī)理的研究，有助于更好的對Flash進(jìn)行測試。 其次，本論文對存儲器的測試方法進(jìn)行了深入的研究。主要分析了幾種常見的存儲器測試算法：MSCAN算法、Gallop算法、Checkboard算法和March及其衍生算法的復(fù)雜度和故障覆蓋率。由于Flash存儲器的特殊結(jié)構(gòu)及訪問機(jī)制，本文將Checkboard做了相應(yīng)的改進(jìn)以便將其應(yīng)用到Flash存儲器的測試中。最終本文確定以改進(jìn)的Checkboard算法和March-FT算法作為Flash存儲器的測試算法，并加以實現(xiàn)。最后，本文對并行接口測試、半并行接口測試和串行接口測試三種測試方案 進(jìn)行了研究，最終選定串行接口測試方案作為本文的測試方案，該方案能夠有效的降低機(jī)臺測試的成本。結(jié)合之前研究的算法，本文設(shè)計并實現(xiàn)了Flash存儲器的內(nèi)建自測試電路。電路通過Modelsim進(jìn)行了仿真和驗證，確認(rèn)了電路架構(gòu)和功能的正確性。
[Abstract]:Modern society is an information society, information society can not do without the storage of information, so memory in our life is more and more widely used. In SoC chips, the proportion of memory is gradually increasing. It is estimated that more than 95% of the total area of SoC chips will be occupied by embedded memory by 2016. In many kinds of memory, Flash is a kind of non-volatile memory, because of its characteristics of keeping data after power down, the capacity of Flash memory is increasing and the integration level is increasing, which leads to more and more defects. The measurement of it becomes more and more difficult. In addition, the cost of testing the SoC chip due to the increase in pin and speed, has become more and more expensive. So this paper studies the method of SoC embedded Flash built-in self-test. In this paper, the basic structure and working principle of Flash memory are introduced, and the inherent fault of memory and the special fault of Flash are analyzed and studied in combination with its structure and working principle. Inherent faults include fixed fault, switching fault and bridge fault, and special faults include DC write (DC-Programming), DC brush (DC-Erasure), drain interference (DrainDisturbance) and so on. Through the study of the mechanism of these faults, it is helpful to test the Flash better. Secondly, the test method of memory is studied deeply in this paper. This paper mainly analyzes the complexity and fault coverage of several common memory testing algorithms: the memory test algorithm: the Gallop algorithm, the March algorithm and its derived algorithm. Because of the special structure and access mechanism of Flash memory, the Checkboard is improved in this paper in order to apply it to the test of Flash memory. Finally, the improved Checkboard algorithm and March-FT algorithm are selected as the test algorithm of Flash memory and implemented. Finally, this paper studies three test schemes: parallel interface test, semi-parallel interface test and serial interface test. Finally, the serial interface test scheme is selected as the test scheme of this paper. This scheme can effectively reduce the cost of machine testing. Combined with the previous algorithms, this paper designs and implements the built-in self-test circuit of Flash memory. The circuit is simulated and verified by Modelsim, and the correctness of the circuit structure and function is confirmed.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2013
【分類號】：TP333

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本文編號：2173393