基于相鄰多層冗余共享的三維存儲(chǔ)器堆疊方法
發(fā)布時(shí)間:2018-07-21 08:51
【摘要】:為提高三維存儲(chǔ)器的成品率和減少冗余行列所需的TSVs的數(shù)量,提出每一層存儲(chǔ)塊都與相鄰上下兩層共享冗余的三維存儲(chǔ)器冗余共享結(jié)構(gòu),并給出了一種新的堆疊方案,將故障較多與較少的芯片交替堆疊.實(shí)驗(yàn)結(jié)果表明,該結(jié)構(gòu)在有效控制TSVs數(shù)量增長(zhǎng)的前提下,提高了三維存儲(chǔ)器的修復(fù)率.
[Abstract]:In order to improve the yield of 3D memory and reduce the number of TSVs needed for redundant columns, a redundant sharing structure of 3D memory is proposed in which each layer of storage blocks share redundancy with adjacent upper and lower layers, and a new stacking scheme is proposed. Alternately stack more faults with fewer chips. The experimental results show that the proposed structure can effectively control the growth of TSVs and improve the repair rate of 3D memory.
【作者單位】: 合肥工業(yè)大學(xué)計(jì)算機(jī)與信息學(xué)院;情感計(jì)算與先進(jìn)智能機(jī)器安徽省重點(diǎn)實(shí)驗(yàn)室;日本德島大學(xué)先端技術(shù)科學(xué)教育部;
【基金】:國(guó)家自然科學(xué)基金資助項(xiàng)目(61306049;61204046;61432004;61474035)
【分類號(hào)】:TP333
,
本文編號(hào):2134992
[Abstract]:In order to improve the yield of 3D memory and reduce the number of TSVs needed for redundant columns, a redundant sharing structure of 3D memory is proposed in which each layer of storage blocks share redundancy with adjacent upper and lower layers, and a new stacking scheme is proposed. Alternately stack more faults with fewer chips. The experimental results show that the proposed structure can effectively control the growth of TSVs and improve the repair rate of 3D memory.
【作者單位】: 合肥工業(yè)大學(xué)計(jì)算機(jī)與信息學(xué)院;情感計(jì)算與先進(jìn)智能機(jī)器安徽省重點(diǎn)實(shí)驗(yàn)室;日本德島大學(xué)先端技術(shù)科學(xué)教育部;
【基金】:國(guó)家自然科學(xué)基金資助項(xiàng)目(61306049;61204046;61432004;61474035)
【分類號(hào)】:TP333
,
本文編號(hào):2134992
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