本文選題：安全存儲 + 抗攻擊技術(shù)��； 參考：《天津大學(xué)》2014年碩士論文

【摘要】：隨著信息時代的到來，海量信息存儲、傳播和交流正在深刻地改變?nèi)祟惖纳a(chǎn)生活方式。然而，信息技術(shù)在追求高性能、高速度的同時，必須重視國家信息安全和個人隱私安全。存儲器作為信息存儲和交流的核心器件，已經(jīng)成為攻擊者竊取信息和分析數(shù)據(jù)的重要來源。因此，如何實現(xiàn)信息的安全存儲是當(dāng)前國內(nèi)外相關(guān)領(lǐng)域的研究熱點，而且國內(nèi)自主研究基于安全存儲的抗攻擊技術(shù)能夠為國防安全和軍事建設(shè)提供強有力的保證。 在此背景下，本文從介紹攻擊手段入手，，主要研究了存儲芯片的抗攻擊技術(shù)和安全防護方法以及安全存儲系統(tǒng)的低功耗策略。針對入侵式及半入侵式攻擊，分析其共同特點并提出相應(yīng)的防護機制；利用多層陶瓷封裝技術(shù)和柔性印制電路板技術(shù)，在封裝體或其內(nèi)部設(shè)計并實現(xiàn)金屬傳感網(wǎng)絡(luò)，用于保護封裝完整性；利用半導(dǎo)體器件的溫度特性和光敏特性，設(shè)計傳感器芯片，實時檢測存儲芯片所處的環(huán)境變量。此外，在本系統(tǒng)中嵌入微型高溫鋰亞硫酰氯電池并設(shè)計極低功耗RC振蕩器和基于振蕩器的系統(tǒng)休眠電路，保證了傳感芯片能夠長期有效工作。由于帶隙基準(zhǔn)源的溫度偏差會影響整個系統(tǒng)的準(zhǔn)確性，論文還介紹了帶有二階溫度補償?shù)幕鶞?zhǔn)電路結(jié)構(gòu)。 采用Global Foundry0.18μm1P6M標(biāo)準(zhǔn)CMOS工藝進行設(shè)計并流片，通過實驗驗證，給出了溫度、可見光、封裝完整性的測試結(jié)果，其中溫度傳感器的溫度系數(shù)為-4.47mV/oC，線性度良好；極低功耗RC振蕩器的頻率為30.74kHz，電流約170nA；系統(tǒng)休眠電路能夠產(chǎn)生占空比為1:4的休眠信號。在一定溫度范圍內(nèi)(-55oC~125oC)，芯片能夠?qū)崿F(xiàn)對溫度、可見光以及封裝完整性實時檢測的功能。
[Abstract]:With the arrival of the information age, mass information storage, communication and communication are profoundly changing the human way of production and life. However, information technology must pay attention to national information security and personal privacy while pursuing high performance and high speed. As the core device of information storage and communication, the memory has become an attacker to steal. Therefore, how to realize the safe storage of information is a hot spot in the related fields at home and abroad, and the domestic independent research on the anti attack technology based on the safe storage can provide a strong guarantee for the security and military construction of national defense.
In this context, starting with the introduction of attack means, this paper mainly studies the anti attack technology and security protection methods of the storage chip and the low power consumption strategy of the secure storage system. In view of the intrusive and semi intrusive attack, it analyzes its common characteristics and puts forward the corresponding protection mechanism, and uses the multilayer ceramic packaging technology and the flexible printed electricity. A metal sensor network is designed and implemented in the package or its interior to protect the integrity of the package. Using the temperature and photosensitive characteristics of the semiconductor device, the sensor chip is designed to detect the environmental variables in the memory chip in real time. In addition, the micro high temperature lithium sulfonyl chloride battery is embedded in the system and is very low in design. The power RC oscillator and the oscillator based dormancy circuit ensure that the sensor chip can work effectively for a long time. The temperature deviation of the bandgap reference will affect the accuracy of the whole system. The paper also introduces the reference circuit structure with two order temperature compensation.
The test results of temperature, visible light and encapsulation integrity are given by Global Foundry0.18 m1P6M CMOS technology. The temperature coefficient of the temperature sensor is -4.47mV/oC, the linearity is good, the frequency of the extremely low power RC oscillator is 30.74kHz, the current is 170nA, and the system dormancy circuit can be used. A dormant signal with a duty cycle of 1:4 is produced. Within a certain temperature range (-55oC~125oC), the chip can perform real-time detection of temperature, visible light and package integrity.
【學(xué)位授予單位】：天津大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TP333;TP309

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