本文選題：阻變存儲單元 + 阻變特性　； 參考：《華中科技大學》2013年碩士論文

【摘要】：阻變隨機存儲器具有低壓、高速、低功耗、結構簡單、與CMOS傳統(tǒng)工藝兼容、低成本、高密度等優(yōu)勢而越來越受到廣泛的關注，被認為是下一代可能取代閃存而成為主流存儲產(chǎn)品的一種新型存儲器。同時，由于納米電子學的發(fā)展，給集成電路的發(fā)展帶來了新的機遇，阻變存儲器作為一種具有很好技術潛力的新型存儲器，將有望在眾多領域得到廣泛的應用。目前，為進一步產(chǎn)量化阻變存儲器而作為通用的隨機存儲器，需要熟悉阻變存儲器件的特性及設計合適的驅動電路。課題的主要工作就集中在對阻變存儲器的特性研究及其讀寫電路的設計。 首先，從阻變存儲元入手分析阻變存儲器的存儲原理、一般阻變存儲器件的性能參數(shù)，對阻變存儲器件進行分類，研究能用作阻變存儲器的材料體系，結合存儲元研究幾種常用阻變存儲單元結構，比較各種結構的優(yōu)缺點，，分析阻變存儲器件性能的影響因素。 其次，研究阻變存儲單元阻變行為的幾種機制及幾種阻變存儲單元的建模方法。由于可用作阻變存儲器件的材料較多，不同材料體系的阻變機制有所區(qū)別，根據(jù)不同材料的I-V特性曲線分析其相應的阻變機制。為了方便阻變存儲器的集成設計，提出了阻變存儲單元的建模方法和模型。 最后，設計一種用于阻變存儲器的讀寫電路。提出了讀寫電路的整體模塊結構圖，以層次及模塊化方法設計了讀寫電路。針對阻變存儲單元特殊的I-V特性曲線，分別從脈沖信號的寬度與幅值兩個角度設計出讀寫電路的邏輯電路部分及模擬電路部分，并做了仿真驗證。同時對設計出的讀寫電路作了優(yōu)化，給出了一種用于優(yōu)化電路的操作方法，以提高讀寫電路的準確性，并通過減少對阻變存儲單元寫操作次數(shù)來提高阻變存儲器件的使用壽命。
[Abstract]:Resistive random access memory (RAM), with low voltage, high speed, low power consumption and simple structure, is becoming more and more widely concerned with the advantages of traditional CMOS technology, low cost and high density. It is considered to be a new type of storage device that may replace flash memory and become the mainstream storage product. Development brings new opportunities. As a new type of memory with good technical potential, resistive memory is expected to be widely used in many fields. At present, as a universal random memory for further production of resistive memory, it is necessary to be familiar with the characteristics of the resistive storage devices and to design appropriate driving circuits. The main work is focused on the study of the characteristics of the resistive variable memory and the design of its read-write circuit.
Firstly, the storage principle of resistive memory is analyzed from the impedance storage element, the performance parameters of the resistive memory device are generally classified, the resistive memory parts are classified, the material system which can be used as the resistive memory is studied, and the structure of several commonly used resistive memory cells is studied with the storage element, and the advantages and disadvantages of various structures are compared, and the resistive memory is analyzed. The factors affecting the performance of the parts.
Secondly, several mechanisms of resistive memory cell resistance and several modeling methods of resistive storage unit are studied. Because more materials are used as resistive storage devices, the resistance mechanism of different material systems is different, and the corresponding resistance mechanism is analyzed according to the I-V characteristic curve of different materials. A modeling method and model of resistive variable memory cell are proposed.
Finally, a reading and writing circuit for the resistive memory is designed. The overall modular structure of the read write circuit is proposed. The read write circuit is designed by the hierarchical and modularized method. In view of the special I-V characteristic curve of the resistive memory unit, the logic circuit part and the module of the reading and writing circuit are designed from two angles of the width and amplitude of the pulse signal. The circuit part of the circuit is simulated and the simulation verification is done. At the same time, the designed reading and writing circuit is optimized, and an operation method used to optimize the circuit is given to improve the accuracy of the read and write circuit, and to improve the service life of the resistive storage device by reducing the number of write operations on the resistive storage unit.
【學位授予單位】：華中科技大學
【學位級別】：碩士
【學位授予年份】：2013
【分類號】：TP333

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相關期刊論文 前2條

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