本文選題：非易失性 + RRAM��； 參考：《西安電子科技大學(xué)》2013年碩士論文

【摘要】：近年來(lái)，在便攜電子產(chǎn)品推動(dòng)下，對(duì)于非揮發(fā)性存儲(chǔ)器（NVM）的需求日益增長(zhǎng)。FLASH代表著當(dāng)今應(yīng)用最為廣泛的非揮發(fā)性存儲(chǔ)器，其發(fā)展始終與摩爾定律保持一致。然而，由于面臨22nm的尺寸極限，F(xiàn)LASH的未來(lái)發(fā)展將受到嚴(yán)重制約。作為閃存的潛在替代者，新型非揮發(fā)性存儲(chǔ)器（NVM）受到了廣泛的研究。而阻性隨機(jī)存取存儲(chǔ)器（RRAM）則憑借其獨(dú)特優(yōu)勢(shì)備受關(guān)注。 本文首先介紹了RRAM阻變存儲(chǔ)器基本原理和研究現(xiàn)狀，并根據(jù)RRAM研究仍然停留于實(shí)驗(yàn)測(cè)試研究階段的現(xiàn)狀，，提出了實(shí)驗(yàn)研究與計(jì)算機(jī)仿真相結(jié)合的方法，以便于更好地對(duì)RRAM物理機(jī)制進(jìn)行探索。其次，開展了對(duì)RRAM存儲(chǔ)單元材料結(jié)構(gòu)設(shè)計(jì)的研究，制備了一系列RRAM單元樣品，并進(jìn)行了電學(xué)特性測(cè)試和分析。再次，學(xué)習(xí)和研究了ATLAS仿真工具的使用，并利用ATLAS仿真工具完成對(duì)RRAM單元的建模和仿真，并完成仿真結(jié)果分析。最后，根據(jù)實(shí)驗(yàn)測(cè)試數(shù)據(jù)和仿真結(jié)果，對(duì)RRAM存儲(chǔ)器設(shè)計(jì)所存在的問(wèn)題提出了一系列建議。
[Abstract]:In recent years, driven by portable electronic products, the demand for non-volatile memory (NVMN) has been increasing. Flash represents the most widely used non-volatile memory, and its development is consistent with Moore's law. However, the future development of flash will be severely restricted due to the size limit of 22nm. As a potential alternative to flash memory, new non-volatile memory (NVM) has been widely studied. RRAM (resistive random access memory) has attracted much attention because of its unique advantages. This paper first introduces the basic principle and research status of RRAM resistive memory, and according to the current situation that RRAM research is still in the stage of experimental test and research, the method of combining experimental research with computer simulation is put forward. In order to better explore the physical mechanism of RRAM. Secondly, a series of RRAM cell samples were prepared, and the electrical properties were tested and analyzed. Thirdly, the use of ATLAS simulation tools is studied, and the modeling and simulation of RRAM cells are completed by using ATLAS simulation tools, and the simulation results are analyzed. Finally, according to the experimental data and simulation results, a series of suggestions on the design of RRAM memory are put forward.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2013
【分類號(hào)】：TP333

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