本文選題：非揮發(fā)存儲器 + 阻性存儲器��； 參考：《西安電子科技大學(xué)》2014年碩士論文

【摘要】：存儲器與人們的生活密切相關(guān)，，非揮發(fā)性存儲器則占據(jù)了存儲器市場的百分之九十以上。Flash代表著當(dāng)今應(yīng)用最為廣泛的非揮發(fā)性存儲器，占半導(dǎo)體存儲器市場的絕大份額。然而，基于傳統(tǒng)浮柵結(jié)構(gòu)的Flash技術(shù)遭遇到了嚴重的技術(shù)瓶頸，嚴重的影響了Flash的進一步廣泛應(yīng)用。一些基于其它原理實現(xiàn)存儲功能的新型非揮發(fā)性存儲器近年來得到了人們越來越多的關(guān)注。而RRAM作為這種新型非揮發(fā)性存儲器中的一員，憑借其高讀寫速度、低功耗、高集成度、低成本等優(yōu)勢成為下一代主流存儲器的重點研究對象。 本文將研究RRAM的注意力集中在二元金屬氧化物材料上，因為其組份簡單且制備工藝與目前的CMOS制程相兼容。主要開展了基于TiO2、TiO2/Al2O3、La2O3材料RRAM器件電阻轉(zhuǎn)變特性以及電阻轉(zhuǎn)變機制方面的研究。論文首先對RRAM阻變存儲器的基本原理，結(jié)構(gòu)和研究現(xiàn)狀進行了簡單的論述。目前世界范圍內(nèi)對RRAM研究仍然停留于初始階段，本課題實驗過程中首先制備了三種不同結(jié)構(gòu)和功能層的RRAM器件單元，然后用半導(dǎo)體參數(shù)測試儀對所制備的RRAM器件進行了伏安特性測試。通過對測試結(jié)果的分析，我們對RRAM器件的阻變機制進行了合理解釋，并為將來RRAM存儲器設(shè)計提出了一些想法和建議。
[Abstract]:Memory is closely related to people's life. Non-volatile memory (NVM) occupies more than 90% in the memory market. Flash represents the most widely used non-volatile memory and occupies the majority share of semiconductor memory market. However, Flash technology based on traditional floating gate structure has encountered a serious technical bottleneck, which has seriously affected the further wide application of Flash. Some new nonvolatile memory based on other principles have been paid more and more attention in recent years. RRAM as a member of this new non-volatile memory, with its high read and write speed, low power consumption, high integration, Low cost and other advantages have become the main research object of the next generation mainstream memory. This paper focuses on binary metal oxide materials because of its simple composition and compatible fabrication process with the current CMOS process. The resistance transition characteristics and resistance transition mechanism of RRAM devices based on TIO _ 2 / Al _ 2O _ 3 / Al _ 2O _ 3 and La _ 2O _ 3 are studied. Firstly, the basic principle, structure and research status of RRAM resistive memory are briefly discussed in this paper. At present, the research of RRAM in the world is still in the initial stage. In the course of the experiment, three kinds of RRAM devices with different structures and functional layers have been fabricated. Then the voltammetric characteristics of the fabricated RRAM devices were measured by semiconductor parameter tester. Through the analysis of the test results, we explain the resistive mechanism of RRAM devices reasonably, and put forward some ideas and suggestions for the design of RRAM memory in the future.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TP333

【參考文獻】

中國期刊全文數(shù)據(jù)庫 前4條

1 唐文潔,劉之景,陶進緒,劉磁輝;納米晶存儲特性的研究[J];半導(dǎo)體技術(shù);2004年10期

2 付承菊;郭冬云;;鐵電存儲器的研究進展[J];微納電子技術(shù);2006年09期

3 李穎_";劉明;龍世兵;劉琦;張森;王艷;左青云;王琴;胡媛;劉肅;;基于I-V特性的阻變存儲器的阻變機制研究[J];微納電子技術(shù);2009年03期

4 周益春;唐明華;;鐵電薄膜及鐵電存儲器的研究進展[J];材料導(dǎo)報;2009年09期

本文編號：1994557