本文選題：非晶碳薄膜 + 磁控濺射�。� 參考：《中南大學(xué)》2014年碩士論文

【摘要】：摘要：隨著存儲器朝著高存儲密度、長保持時間、微型化、低功耗和讀寫速度快等方向發(fā)展,與互補金屬氧化物半導(dǎo)體(CMOS)工藝兼容的新型非易失性存儲器——基于電致電阻效應(yīng)的電阻型存儲器(RRAM)兼具結(jié)構(gòu)簡單的特點,正受到人們的廣泛關(guān)注。目前RRAM發(fā)展的關(guān)鍵是研發(fā)新的存儲材料和闡明RRAM阻變機理。非晶碳薄膜組分簡單且穩(wěn)定性高,是RRAM的理想候選材料之一。 本文對比研究了Ar和N2作為起輝氣體制備的沉積態(tài)非晶碳薄膜和氮摻雜非晶碳薄膜的電學(xué)性能。發(fā)現(xiàn)Ar起輝制備的非晶碳膜均無電致電阻效應(yīng)。N2起輝制備的氮摻雜非晶碳薄膜均表現(xiàn)出電致電阻效應(yīng),性能最好的器件能穩(wěn)定循環(huán)102以上,開關(guān)比略大于10,但器件產(chǎn)率只有50%左右。 通過對磁控濺射制備的氮摻雜碳膜在惰性氣氛中進行熱處理,制備出非晶碳薄膜,其內(nèi)部含有大量幾十納米孔徑的通孔。基于這些納米多孔結(jié)構(gòu),首次制備出了包含金屬納米導(dǎo)電的無Forming過程(Forming-free)電阻轉(zhuǎn)變特性的兩端器件,該器件具有優(yōu)異的抗疲勞性和數(shù)據(jù)保持性能,能穩(wěn)定循環(huán)103次以上,室溫數(shù)據(jù)保持性接近84天,120℃、Ar環(huán)境下能穩(wěn)定保持7天。同時探究了Cu、Ag、Pt三種金屬頂電極對電阻轉(zhuǎn)變性能的影響,得出Cu頂電極的器件性能最好,Pt頂電極的所有器件均無電致電阻效應(yīng)。 運用X光電子能譜儀(XPS)、原子力顯微鏡(AFM)、導(dǎo)電原子力顯微鏡(CAFM)、透射電鏡(TEM)和綜合物理測試系統(tǒng)(PPMS)等手段對非晶碳薄膜和器件進行了表征,證實了退火態(tài)氮摻雜碳膜中“錐形”金屬導(dǎo)電細絲的存在。碳膜RRAM器件的電阻轉(zhuǎn)變機理遵循金屬導(dǎo)電細絲模型,Cu導(dǎo)電細絲中發(fā)生電化學(xué)溶解導(dǎo)致的細絲通斷引發(fā)器件的SET和RESET過程。
[Abstract]:Absrtact: with the development of memory towards high storage density, long retention time, miniaturization, low power consumption and fast reading and writing speed, A new type of non-volatile memory compatible with complementary metal oxide semiconductor (CMOS) process, a resistive memory based on electroresistance effect (RRAM), has attracted much attention due to its simple structure. At present, the key to the development of RRAM is to develop new storage materials and clarify the mechanism of RRAM resistance. Amorphous carbon thin film is one of the ideal candidate materials for RRAM because of its simple composition and high stability. The electrical properties of deposited amorphous carbon films and nitrogen doped amorphous carbon films prepared by ar and N2 as starting gases have been studied in this paper. It is found that the amorphous carbon films prepared by ar have no electroresistance effect. The nitrogen-doped amorphous carbon films prepared by N2 priming have electroresistance effect, and the devices with the best performance can cycle more than 102. The switching ratio is slightly greater than 10, but the device yield is only about 50%. Amorphous carbon films were prepared by heat treatment of nitrogen-doped carbon films prepared by magnetron sputtering in inert atmosphere. Based on these nano-porous structures, the two end devices containing metal nanoscale conduction without Forming process Forming-freeform resistance transition characteristics have been fabricated for the first time. The device has excellent fatigue resistance and data retention performance, and can stabilize the cycles more than 103times. The data retention at room temperature is close to 84 days and can be kept stable for 7 days at 120 鈩，

本文編號：1971982