本文選題：阻變存儲 + nc-Si薄膜　； 參考：《南京大學(xué)》2012年碩士論文

【摘要】：隨著英特爾公司宣布開始量產(chǎn)22納米工藝制程的芯片,集成電路的器件線寬不斷減小,基于電荷存儲機制的傳統(tǒng)存儲器已經(jīng)遇到極大的挑戰(zhàn)。在這個背景下,許多新型存儲器被提出,其中最有希望的候選之一就是阻變存儲器,而阻變存儲機制的研究是當(dāng)前阻變存儲器的研究熱點。最近,關(guān)于SiOx薄膜中"nc-Si細(xì)絲通道”引起的阻變特性的報道引起了廣泛關(guān)注,同時為我們探索nc-Si薄膜的阻變特性提供了線索。nc-Si薄膜作為一類重要的硅基功能材料,在硅基光電集成方面有著重要的應(yīng)用前景,對nc-Si薄膜的阻變特性的研究將對阻變材料在未來存儲器中的應(yīng)用有著重要的意義。 本文以鑲嵌在Si02基質(zhì)中的nc-Si薄膜為研究對象,采用電子束蒸發(fā)法制備了SiO薄膜,通過HR-TEM研究SiO薄膜和nc-Si薄膜的微結(jié)構(gòu),用XPS分析了SiO薄膜和nc-Si薄膜的組分結(jié)構(gòu),探討了不同的退火條件對nc-Si薄膜結(jié)構(gòu)的影響。在此基礎(chǔ)上,制備了頂電極/nc-Si薄膜／襯底的“三明治”結(jié)構(gòu)樣品,進而研究了不同樣品制備條件下c-Si薄膜的阻變特性,分析了阻變特性的根源。基于經(jīng)過擦／寫操作的器件的R-TEM,提出了nc-Si細(xì)絲通道模型,并通過原子鍵的結(jié)構(gòu)圖解釋了nc-Si薄膜的阻變機制。最后,研究了阻變nc-Si薄膜的介電函數(shù)特征峰,提出了以nc-Si為核心,SiOx為殼層的核殼結(jié)構(gòu),是形成nc-Si細(xì)絲通道的基本單元,為闡明阻變機制提供了有力的證據(jù)。本文的主要成果和創(chuàng)新點如下： (1)利用電子束蒸發(fā)制備SiO薄膜結(jié)合退火的方法制備了nc-Si薄膜。采用HR-TEM對樣品進行了表征,證實了快速熱退火與常規(guī)爐管式退火相結(jié)合可以得到均勻性較好的鑲嵌在Si02基質(zhì)中的nc-Si薄膜。根據(jù)XPS建立了SiO薄膜和nc-Si薄膜的RB_RM混合模型,闡明了原始SiO薄膜的結(jié)構(gòu)特征和nc-Si薄膜的形成機制。同時,在nc-Si薄膜中觀察到了由于“電荷存儲效應(yīng)”引起的XPS峰位漂移的現(xiàn)象。 (2)退火前后的樣品的I-V特性的對比表明nc-Si是產(chǎn)生阻變特性的關(guān)鍵。在排除了頂電極材料對阻變特性的影響的前提下,我們證明了nc-Si薄膜是阻變特性的唯一原因�；贖R-TEM結(jié)果,使用“nc-Si細(xì)絲通道”模型解釋了器件的阻變機制；建立了Si、O原子成鍵示意圖,闡明了SiOx(?)Si的氧化還原反應(yīng)和“nc-Si細(xì)絲”的“斷開”與“連接”。此外,利用光刻方法減小頂電極的面積,并成功改進了nc-Si薄膜器件的阻變特性。 (3)根據(jù)SiO薄膜和nc-Si薄膜的結(jié)構(gòu)模型,選取了相應(yīng)的介電函數(shù)模型,研究了nc-Si薄膜結(jié)構(gòu)與介電函數(shù)特征之間的關(guān)系�；谖覀兊募{米硅薄膜的介電函數(shù)特征峰有別于nc-Si鑲嵌在Si02基質(zhì)結(jié)構(gòu)的特征峰,提出了以nc-Si為核心,SiOx為殼層的核殼結(jié)構(gòu),該結(jié)構(gòu)將有利于nc-Si硅細(xì)絲通道的形成。并從nc-Si的尺寸、間距以及SiOx殼層的厚度解釋了阻變特性與nc-Si核殼結(jié)構(gòu)的關(guān)系,為阻變機制模型提供了有力的證據(jù)。
[Abstract]:With Intel's announcement that it is starting to mass-produce a 22-nanoscale process chip, the device linewidth of integrated circuits is decreasing, and the traditional memory based on charge storage mechanism has faced great challenges. In this context, many new types of memory have been proposed, among which one of the most promising candidates is resistive memory. Recently, the reports on the resistance properties of nc-Si filaments in SiOx thin films have attracted much attention, and have provided clues for us to explore the resistive properties of nc-Si thin films as a kind of important silicon-based functional materials. The research on the resistance characteristics of nc-Si thin films will be of great significance to the application of resistive materials in the future memory. In this paper, nc-Si thin films embedded in Si02 substrates were studied. SiO thin films were prepared by electron beam evaporation. The microstructure of SiO and nc-Si films was studied by HR-TEM. The composition of SiO and nc-Si films was analyzed by XPS. The effect of different annealing conditions on the structure of nc-Si films was discussed. On this basis, the "sandwich" structure samples of the top electrode / nc-Si film / substrate were prepared, and the resistance properties of the c-Si films were studied under different conditions, and the root causes of the resistance characteristics were analyzed. Based on R-TEM of erasure / write operation, the nc-Si filament channel model is proposed, and the mechanism of nc-Si film resistance is explained by atomic bond structure diagram. Finally, the dielectric function characteristic peaks of nc-Si films are studied. The core-shell structure with nc-Si as the core and Sio _ x as the shell layer is proposed as the basic unit to form the nc-Si filament channel, which provides a strong evidence for elucidating the resistance mechanism. The main achievements and innovations of this paper are as follows: 1) SiO thin films were prepared by electron beam evaporation (EBE) combined annealing. The samples were characterized by HR-TEM, and it was proved that the nc-Si films embedded in Si02 substrate with good homogeneity could be obtained by combining rapid thermal annealing with conventional furnace tube annealing. Based on XPS, the mixed RB_RM model of SiO film and nc-Si film was established, and the structure characteristics of the original SiO film and the formation mechanism of nc-Si film were elucidated. At the same time, the phenomenon of XPS peak drift caused by "charge storage effect" has been observed in nc-Si thin films. 2) the comparison of I-V characteristics of the samples before and after annealing shows that nc-Si is the key factor to produce resistance properties. On the premise of excluding the influence of the top electrode material on the resistance, we prove that the nc-Si film is the only reason for the resistance. Based on the HR-TEM results, the "nc-Si filament channel" model is used to explain the resistance mechanism of the device, and the bond diagram of Si-O atom is established, which illustrates the redox reaction of SiOx(?)Si and the "disconnection" and "connection" of "nc-Si filament". In addition, the area of the top electrode is reduced by photolithography, and the resistance characteristics of nc-Si thin film devices are improved successfully. According to the structure model of SiO film and nc-Si film, the corresponding dielectric function model is selected, and the relationship between the structure of nc-Si thin film and the characteristics of dielectric function is studied. Based on the difference between the dielectric function characteristic peak of our nanocrystalline silicon film and the characteristic peak of nc-Si embedded in the Si02 matrix structure, a core-shell structure with nc-Si as the core SiOx as shell layer is proposed, which will facilitate the formation of nc-Si silicon filament channel. The relationship between the resistance and the structure of the nc-Si core-shell is explained from the dimension, spacing and the thickness of the SiOx shell, which provides a strong evidence for the resistance mechanism model.
【學(xué)位授予單位】：南京大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2012
【分類號】：TB383.1;TP333

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本文編號：1947038