本文選題：氧化鋅 + 阻變存儲(chǔ)器��； 參考：《天津理工大學(xué)》2012年碩士論文

【摘要】：近年來，由于存儲(chǔ)器的快速發(fā)展，鑒于傳統(tǒng)非揮發(fā)性Flash存儲(chǔ)器在集成電路工藝32nm以下時(shí)技術(shù)節(jié)點(diǎn)的發(fā)展瓶頸，新型非揮發(fā)阻變存儲(chǔ)器RRAM以其特征尺寸小、存儲(chǔ)單元結(jié)構(gòu)簡單、讀寫速度更快、集成度更高、更低功耗，與現(xiàn)有半導(dǎo)體CMOS工藝相兼容的特點(diǎn)，引起了廣泛關(guān)注和研究。ZnO以其良好的電學(xué)特性成為了阻變存儲(chǔ)器的研究對(duì)象。 本論文主要研究結(jié)構(gòu)為金屬-絕緣體-金屬(MIM)的氧化鋅基阻變存儲(chǔ)單元的構(gòu)建及其開關(guān)特性。采用超高真空磁控濺射法制備ZnO阻變功能層及電極薄膜；并利用原子力顯微鏡(AFM)，掃描電子顯微鏡(SEM)，，半導(dǎo)體參數(shù)分析儀(SPA)，X射線衍射(XRD)，四探針電阻測(cè)試儀，臺(tái)階儀等分別對(duì)其物理微觀結(jié)構(gòu)、電學(xué)開關(guān)特性進(jìn)行表征。 具體研究內(nèi)容及結(jié)果如下： 1）本文分析了氧分壓、基底溫度、薄膜厚度等工藝條件對(duì)ZnO薄膜生長及其性能的影響。測(cè)試結(jié)果表明，在氧分壓為60%，200℃條件下生長的ZnO表面形貌與電學(xué)特性最佳；ZnO薄膜厚度只影響Forming電壓，厚度越大，F(xiàn)orming電壓越大，對(duì)Set和Reset電壓基本不影響。 2）分析了不同電極對(duì)于ZnO基阻變存儲(chǔ)單元電學(xué)開關(guān)性能的影響。通過沉積下電極材料Cu、Al、Ag、Au、Pt，并對(duì)ZnO基存儲(chǔ)單元進(jìn)行電學(xué)測(cè)試，以Cu、Au、Pt為下電極時(shí)具有可逆的單極阻變特性，原因是三者與ZnO形成了較低的肖特基勢(shì)壘；由于Ag與ZnO薄膜形成較高的肖特基勢(shì)壘，觀測(cè)到雙極阻變特性；Al電極沒有測(cè)試到阻變現(xiàn)象，分析認(rèn)為是由于Al電極被氧化的原因。淺析了在有效減小上電極尺寸的條件下，明顯降低了Reset電流，并且可增大阻變存儲(chǔ)單元的高阻態(tài)值達(dá)106之多，從而提高了RRAM存儲(chǔ)單元的穩(wěn)定性和可靠性。 3）設(shè)計(jì)并制備了1C1R的RRAM存儲(chǔ)單元ZnO/Metal/SiO2/Metal/Substrate，以降低Set與Reset電壓來減小RRAM功耗；經(jīng)電學(xué)測(cè)試，1C1R結(jié)構(gòu)的RRAM，利用電容在外加正負(fù)偏壓下，電容本身的充-放電機(jī)制，可以有效減小ZnO雙極性阻變轉(zhuǎn)換過程中的Set和Reset電壓，差值可達(dá)0.6V，從而減小了ZnO基存儲(chǔ)單元功耗。從降低Reset電流方面，淺析了用來降低功耗的P/N型疊層結(jié)構(gòu)。 總之，本文主要是從制備工藝、電極、設(shè)計(jì)并制備新型1C1R結(jié)構(gòu)等方面對(duì)ZnO基阻變存儲(chǔ)單元進(jìn)行研究。對(duì)于ZnO基RRAM的阻變特性及有效降低ZnO基存儲(chǔ)單元功耗等方面進(jìn)行了探索，為下一步非揮發(fā)性阻變存儲(chǔ)器的研究以及應(yīng)用奠定了基礎(chǔ)。
[Abstract]:In recent years, due to the rapid development of memory, because of the bottleneck of the development of traditional non-volatile Flash memory when the technology node is below 32nm, the new non-volatile resistive memory (RRAM) is characterized by its small size and simple memory cell structure. The characteristics of faster reading and writing, higher integration and lower power consumption, which are compatible with the existing semiconductor CMOS process, have attracted wide attention and research. CMOS has become the research object of resistive memory due to its good electrical properties. In this paper, the construction and switching characteristics of zinc oxide based resistive memory cells with metal-insulator-metal MIM structure are studied. ZnO resistive functional layer and electrode thin film were prepared by ultra-high vacuum magnetron sputtering method, and the atomic force microscope (AFM), scanning electron microscope (SEM), semiconductor parameter analyzer (SPA), X-ray diffraction (XRD) and four-probe resistance tester were used. The physical microstructure and the characteristics of electrical switch were characterized by step meter. The specific contents and results of the study are as follows: 1) the effects of oxygen partial pressure, substrate temperature and film thickness on the growth and properties of ZnO thin films are analyzed. The results show that the best thickness of ZnO films grown at 60 鈩

本文編號(hào)：1942102