本文選題：阻變存儲器 + 明膠��； 參考：《浙江大學(xué)》2017年碩士論文

【摘要】：阻變存儲器是一種新型的具有雙極性電阻開關(guān)特性的非易失性存儲器,也稱為憶阻器,以其結(jié)構(gòu)簡單、低功耗、高讀寫速度以及易于與其他電子器件集成的特性,展示了作為下一代存儲器件的巨大潛力。相比于無機(jī)物,有機(jī)物具有易于成膜,種類多,成本低,且部分有機(jī)物基于生物可降解等特性,在未來的柔性電子器件中具有廣闊的應(yīng)用前景。本文主要通過對基于明膠的阻變存儲器的制備與性能分析,通過工藝的優(yōu)化,設(shè)計(jì)出性能良好的器件結(jié)構(gòu),對不同襯底、不同金屬電極的器件進(jìn)行制備與分析,得出明膠作為阻變存儲器介質(zhì)層材料的巨大潛力。具體的研究內(nèi)容和成果如下:1、基于微納電子平臺,設(shè)計(jì)并優(yōu)化了基于明膠Au/gelatin/Ag結(jié)構(gòu)阻變存儲器的工藝流程;對不同線寬的器件結(jié)構(gòu)結(jié)果進(jìn)行分析,得出了 70μm線寬器件結(jié)構(gòu)為最佳;對金屬掩膜版的調(diào)整,解決鍍膜過程中器件形狀不規(guī)整的問題。設(shè)計(jì)出一套成熟的阻變存儲器制備工藝,對之后明膠存儲器的研究奠定了良好的基礎(chǔ)。2、成功制備W/gelatin/Mg結(jié)構(gòu)阻變存儲器,器件的開關(guān)電阻比達(dá)到了 104;通過導(dǎo)電原子力顯微鏡(C-AFM)測試,觀察到器件高阻態(tài)與低阻態(tài)導(dǎo)電細(xì)絲的狀況,對其阻變機(jī)理進(jìn)行了研究與探討;對同一器件超過80次重復(fù)性測試,證明器件具有穩(wěn)定的開關(guān)比;對器件進(jìn)行超過106s的測試,證明器件具有良好數(shù)據(jù)儲存效應(yīng)和可持續(xù)性能;對W/gelatin/Mg結(jié)構(gòu)器件進(jìn)行降解實(shí)驗(yàn),表明其具有良好的降解特性。3、分析了不同工藝因素對W/gelatin/Mg結(jié)構(gòu)阻變存儲器性能的影響。通過對30～160nm厚度的明膠薄膜的器件的制備與測試,得出約80nm為明膠的最佳厚度;通過對105～140℃明膠薄膜烘烤溫度器件的制備與測試,得出約105℃為明膠薄膜的最佳烘烤溫度;通過對24～80℃測試溫度下器件的I-V曲線分析得到,set電壓隨著溫度的升高而降低,80℃時,器件失去阻變特性。4、證明基于明膠存儲器的阻變特性屬于明膠的固有屬性。對Al/gelatin/Ag、Al/gelatin/Mg、W/gelatin/Mg 和 Au/gelatin/Mg 結(jié)構(gòu)器件進(jìn)行制備與分析,器件的阻變特性對電極種類依賴關(guān)系較小,較為穩(wěn)定的金屬底電極的器件具有較大的高阻態(tài)電阻;同時對玻璃、明膠、聚乳酸(pla)等襯底的器件的制備與分析,器件的阻變特性與襯底材料關(guān)系不大,粗糙度較大的器件具有較高的高阻態(tài)電阻,即具有較大的開關(guān)比。顯示了明膠作為阻變存儲器的介質(zhì)層材料的廣闊的應(yīng)用前景。
[Abstract]:Resistive memory is a new type of non-volatile memory with bipolar resistance switch characteristics, also known as a resistor, because of its simple structure, low power consumption, high reading and writing speed and easy integration with other electronic devices. It shows the great potential as the next generation memory device. Compared with inorganic compounds, organic compounds have many advantages such as easy to form films, many kinds, low cost, and some organic compounds are based on biodegradability, so they will be widely used in flexible electronic devices in the future. In this paper, through the preparation and performance analysis of the resistance memory based on gelatin, the device structure with good performance is designed by optimizing the process, and the devices with different substrates and different metal electrodes are fabricated and analyzed. The great potential of gelatin as a dielectric layer material for resistive memory is obtained. The specific research contents and results are as follows: 1. Based on micro and nano electronic platform, the process flow of resistive memory based on gelatin Au/gelatin/Ag structure is designed and optimized, and the results of device structure with different linewidth are analyzed. It is concluded that the structure of 70 渭 m linewidth device is the best, and the adjustment of metal mask plate can solve the problem that the device shape is irregular in the process of coating. A set of mature fabrication process of resistive memory was designed, which laid a good foundation for the research of gelatin memory. The W/gelatin/Mg structure resistive memory was successfully fabricated. The switching resistance ratio of the device has reached 104. By means of the C-AFM test, the state of high resistance and low resistance conductive filament is observed, and the resistance mechanism is studied, and the repeatability of the same device is measured more than 80 times. It is proved that the device has a stable switching ratio, the device is tested for more than 106s, the device has good data storage effect and sustainability, and the degradation experiment of the W/gelatin/Mg structure device is carried out. It is shown that it has good degradation characteristics. 3. The influence of different process factors on the performance of W/gelatin/Mg structure resistive memory is analyzed. Through the preparation and test of gelatin film with 30~160nm thickness, the optimum thickness of gelatin film is about 80nm, and the optimum baking temperature of gelatin film is about 105 鈩，

本文編號：1834017