本文選題：固態(tài)盤 + 閃存�。� 參考：《華中科技大學(xué)》2013年碩士論文

【摘要】：固態(tài)盤(Solid State Disk,SSD)作為大容量存儲介質(zhì)具有讀寫速度快、功耗低、防震抗摔等優(yōu)點，其性能主要由閃存芯片、主控芯片以及固件程序決定。其中主控芯片的接口速度是提高固態(tài)盤性能的主要因素之一；固件程序中的閃存轉(zhuǎn)換層(Flash Translation Layer,FTL)將閃存模擬成與磁盤類似的塊設(shè)備，屏蔽閃存的特性，更好地向上兼容文件系統(tǒng)。 選用Xilinx高性能FPGA作為固態(tài)盤的主控芯片，移植微處理器MicroBlaze，通過片內(nèi)總線AXI連接各功能模塊，搭建固態(tài)盤控制器SOPC系統(tǒng)架構(gòu)。 以固態(tài)盤SOPC系統(tǒng)為硬件平臺，設(shè)計實現(xiàn)了閃存轉(zhuǎn)換層。閃存轉(zhuǎn)換層提供初始化、命令解析地址映射、緩沖區(qū)管理、垃圾回收以及壞塊管理功能：通過命令解析和地址映射，將文件系統(tǒng)發(fā)送的命令傳遞給閃存控制單元；通過引入緩沖區(qū)管理，降低直接讀寫閃存的開銷；通過垃圾回收和壞塊管理對閃存芯片的使用空間進行控制和管理。經(jīng)過測試，驗證了閃存轉(zhuǎn)換層的基本功能。 閃存轉(zhuǎn)換層的性能直接影響固態(tài)盤的性能，為了提高固態(tài)盤的效率，針對閃存轉(zhuǎn)換層的緩沖區(qū)管理提出并實現(xiàn)了改進的LRU算法：即在LRU算法基礎(chǔ)上，，利用數(shù)據(jù)的冷熱屬性和更新屬性選取替換塊。通過在固態(tài)盤模擬器SSDsim上運行真實的數(shù)據(jù)負載，驗證算法在命中率、擦除次數(shù)以及平均響應(yīng)時間等方面的性能，相比LRU算法和CFLRU算法都有所提升。
[Abstract]:Solid State disk SSD) as a large capacity storage medium has the advantages of fast reading and writing speed, low power consumption, anti-shock and anti-fall, etc. Its performance is mainly determined by flash memory chip, master control chip and firmware program.The interface speed of the main control chip is one of the main factors to improve the performance of the solid-state disk, and the flash memory conversion layer in the firmware, Flash Translation layer, simulates the flash memory as a block device similar to the disk, shields the characteristics of the flash memory, and is better compatible with the file system up.The Xilinx high performance FPGA is selected as the main control chip of the solid-state disk, the microprocessor MicroBlazeis is transplanted, and each function module is connected through the on-chip bus AXI, and the SOPC system architecture of the solid-state disk controller is built.Using solid state disk SOPC system as hardware platform, flash memory conversion layer is designed and implemented.Flash translation layer provides initialization, command parsing address mapping, buffer management, garbage collection and bad block management functions: through command resolution and address mapping, the file system sent commands to flash control unit;The overhead of direct reading and writing flash memory is reduced by introducing buffer management, and the usage space of flash memory is controlled and managed by garbage collection and bad block management.After testing, the basic function of the flash memory conversion layer is verified.The performance of flash transfer layer directly affects the performance of solid-state disk. In order to improve the efficiency of solid-state disk, an improved LRU algorithm is proposed and implemented for buffer management of flash conversion layer, that is, based on LRU algorithm.Select the replacement block using the hot and cold attributes of the data and the update properties.By running the real data load on the solid state disk simulator SSDsim, the performance of the algorithm in hit ratio, erasure times and average response time is verified. Compared with the LRU algorithm and CFLRU algorithm, the performance of the algorithm is improved.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2013
【分類號】：TP333

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本文編號：1765573