本文選題：閃速存儲　切入點：光刻　出處：《天津大學》2013年碩士論文

【摘要】：自從上個世紀八十年代半導體業(yè)界研究開發(fā)出新型的閃速存儲器技術(shù)FlashMemory，作為一種結(jié)構(gòu)簡單性能可靠的不揮發(fā)性（Non-Volatile）存儲，它區(qū)別于常規(guī)的DDR、SDRAM和RDRAM等揮發(fā)性內(nèi)存能夠在斷電情況下長久可靠地保存數(shù)據(jù)信息。Flash依靠其大容量低成本、優(yōu)秀的可靠性和耐用性、高達10萬次的可擦寫壽命以及易于使用和對各種惡劣環(huán)境的適應能力等突出的特點，迅速地得到市場的青睞。被各類便攜型數(shù)字設備所采用，成為諸多手機、筆記本電腦等數(shù)碼設備的存儲介質(zhì)基礎。自然而然Flash產(chǎn)品和Flash技術(shù)成為了半導體集成電路業(yè)界的寵兒，各個集成電路代工工廠和制造廠家都大量的生產(chǎn)制造Flash產(chǎn)品以滿足廣大市場的需求。然而在整個Flash制造工藝的光刻環(huán)節(jié)中始終存在一個揮之不去的難題——Slash Issue，Slash issue會對Flash產(chǎn)品造成相當大面積的良率損失，甚至于對工藝中的某些層直接造成報廢。因此對Flash產(chǎn)品中的Slash Issue的分析和研究對于良率的提高和成本的降低有著重大的意義。 由于Slash Issue集中出現(xiàn)在光刻工藝環(huán)節(jié)，所以本文從Flash的發(fā)展史，工作原理和結(jié)構(gòu)優(yōu)缺點等基本知識做鋪墊，詳細介紹了與Flash制造密切相關(guān)的光刻工藝環(huán)節(jié)所涉及到的硬件和軟件方面內(nèi)容，包括整個光刻工藝的工作流程，光刻中需要用到的化學物質(zhì)，硬件設備的結(jié)構(gòu)和工作原理以及軟體方面的顯影工藝制程。然后分別從這些方面分析了各自與Slash defect形成的關(guān)系。 本文選擇以一個實際生產(chǎn)制造中出現(xiàn)的Slash defect造成整個代工廠Flash產(chǎn)品當線停產(chǎn)的case作為實例，，通過一系列對比測試和試驗，在排除內(nèi)部和外部環(huán)境、化學品、硬件設備方面的可能性之后，將Slash defect形成的根本原因鎖定在顯影制程上。然后通過增加涂布TARC光阻層以及建立更為優(yōu)化的新顯影程式，最終將Flash產(chǎn)品中的Slash issue完美的解決掉。確保了Flash產(chǎn)品不會因為DRB test fail而導致報廢，避免了大量產(chǎn)品良率丟失和產(chǎn)品報廢率，為今后的生產(chǎn)制造避免了巨大的經(jīng)濟損失。
[Abstract]:Since the semiconductor industry developed a new flash memory technology, Flash memory, in the 1980s, as a non-volatile non-volatile storage with simple structure and reliable performance, It is different from the conventional volatile memory, such as DDRN SDRAM and RDRAM, which can save data information reliably and for a long time under the condition of power failure. It depends on its large capacity, low cost, excellent reliability and durability. With the outstanding features of up to 100000 rewritable life, easy to use and adaptability to various harsh environments, it has been quickly favored by the market. It has been adopted by various portable digital devices and has become a lot of mobile phones. The storage media foundation of digital devices such as notebook computers. Naturally, Flash products and Flash technology have become the darling of the semiconductor integrated circuit industry. All integrated circuit manufacturing factories and manufacturers produce and manufacture Flash products in large quantities to meet the needs of the broad market. However, there is always a lingering problem in the lithography of the whole Flash manufacturing process-Slash issues will be met. Causing considerable yield losses to Flash products, Therefore, the analysis and research of Slash Issue in Flash products is of great significance for the improvement of yield and the reduction of cost. Because Slash Issue mainly appears in lithography process, this paper paves the way from the history of Flash, working principle, advantages and disadvantages of structure and so on. The hardware and software aspects involved in the lithography process which are closely related to Flash manufacturing are introduced in detail, including the work flow of the whole lithography process and the chemical substances used in lithography. The structure and working principle of the hardware and the development process of the software are analyzed, and the relationship between them and the Slash defect is analyzed respectively from these aspects. In this paper, an example of Slash defect, which caused the whole manufacturing plant to stop the production of Flash products, is selected as an example. Through a series of comparative tests and tests, the chemicals are excluded from the internal and external environment. After the hardware device is possible, the root cause of Slash defect formation is locked in the development process. Then by adding the TARC photoresistive layer and creating a more optimized new development program, Finally, the Slash issue in the Flash product is solved perfectly, which ensures that the Flash product will not be scrapped because of DRB test fail, and avoids the loss of yield and scrap rate of a large number of products, thus avoiding the huge economic loss for the future production and manufacture.
【學位授予單位】：天津大學
【學位級別】：碩士
【學位授予年份】：2013
【分類號】：TP333

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