本文選題：多級緩存　切入點：動態(tài)隨機(jī)存取存儲器　出處：《計算機(jī)研究與發(fā)展》2015年S2期 　論文類型：期刊論文

【摘要】：傳統(tǒng)磁盤存儲設(shè)備因其固有的機(jī)械特性,已不能滿足當(dāng)前的數(shù)據(jù)密集型應(yīng)用程序的需求�；陂W存的固態(tài)存儲設(shè)備(solid state drive,SSD)的出現(xiàn)改善了這種情況,并被廣泛用作緩存以降低內(nèi)存與磁盤之間的性能差距。針對由DRAM和SSD構(gòu)成的多級緩存,提出了一種可配置的歷史信息感知的多級緩存替換策略Charm.Charm允許用戶配置應(yīng)用的訪問模式、讀寫模式等多項內(nèi)容,并且還可以根據(jù)應(yīng)用對文件的歷史訪問信息來判斷訪問模式,從而能夠適應(yīng)訪問模式的變化.此外,Charm過濾掉那些只訪問一次的數(shù)據(jù),將多次訪問的熱數(shù)據(jù)緩存至SSD,減少對SSD的寫入次數(shù),提升SSD壽命.使用MCsim對Charm與現(xiàn)有的多級緩存替換算法進(jìn)行了對比測試,在實際的工作負(fù)載下,Charm優(yōu)于其它多級緩存算法.
[Abstract]:Traditional disk storage devices, due to their inherent mechanical properties, can no longer meet the needs of current data-intensive applications. The advent of flash based solid-state storage devices, solid state driveed SSDs, has improved the situation. And it is widely used as cache to reduce the performance gap between memory and disk. For the multilevel cache composed of DRAM and SSD, a configurable historical information aware multilevel cache replacement policy, Charm.Charm, is proposed, which allows users to configure the access mode of applications. Read / write mode, etc., and can judge the access pattern according to the historical access information to the file, so that it can adapt to the change of the access mode. In addition, charge filters out the data that accesses the data only once, In order to reduce the number of writes to SSD and improve the lifetime of SSD, the multi-access hot data is cached to SSD.The Charm is compared with the existing multi-level cache replacement algorithm by using MCsim. Under the actual workload, charge is superior to other multi-level cache algorithms.
【作者單位】： 武漢光電國家實驗室(華中科技大學(xué));信息存儲系統(tǒng)教育部重點實驗室(華中科技大學(xué));華中科技大學(xué)計算機(jī)科學(xué)與技術(shù)學(xué)院;
【基金】：國家“八六三”高技術(shù)研究發(fā)展計劃基金項目(2013AA013203) 華中科技大學(xué)自主創(chuàng)新研究基金項目(HUST:2014QN010)
【分類號】：TP333
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本文編號：1578143