本文關(guān)鍵詞： 金屬氧化物 性能優(yōu)化 機(jī)理分析 柔性電子 電阻式存儲器 低溫原子層淀積　出處：《復(fù)旦大學(xué)》2013年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著半導(dǎo)體工藝技術(shù)的不斷發(fā)展,人們能夠獲得的電子產(chǎn)品越來越先進(jìn),越來越高端。與此同時(shí),由于諾基亞和蘋果對柔性概念機(jī)的推出,人們紛紛將目光投向未來的柔性電子產(chǎn)品,目前,柔性電子產(chǎn)品的研究還只是處于探索階段,雖然已經(jīng)有一些半導(dǎo)體廠商開始嘗試生產(chǎn)和銷售柔性LED等柔性顯示產(chǎn)品,但是產(chǎn)品的性能跟目前基于CMOS系統(tǒng)的硅基產(chǎn)品相比還是有很大差距的。為了實(shí)現(xiàn)這一目標(biāo),最基礎(chǔ)的工作便是在柔性襯底上,制備出性能優(yōu)越的存儲器件,究其性能要求要低于其他的功能器件,如邏輯器件、射頻器件、傳感器件等。 此外,由于信息社會的不斷膨脹,人們對數(shù)據(jù)的需求不斷增長,因此對存儲密度、速度、成本和功耗的要求與日俱增。目前主流的flash存儲器已經(jīng)由于自身的結(jié)構(gòu)限制,正面臨著嚴(yán)峻的挑戰(zhàn),一些新型的非揮發(fā)存儲器開始進(jìn)入人們的目光,然而這些存儲器也有自己的一些缺點(diǎn),目前還不能成為flash的替代者。近年來,RRAM開始不斷受到工業(yè)界和學(xué)術(shù)界的親睞以其結(jié)構(gòu)簡單、微縮能力強(qiáng)、保持時(shí)間長、操作電壓低一級與傳統(tǒng)CMOS工藝兼容等特點(diǎn)。 本論文首先從對RRAM器件相比其他新興存儲器件的優(yōu)點(diǎn)出發(fā),同時(shí)介紹了當(dāng)今比較具有優(yōu)勢的薄膜淀積技術(shù)—原子層淀積技術(shù)(ALD),同時(shí)比較了其他的一些薄膜淀積技術(shù)的優(yōu)劣性。通過利用低溫原子層淀積技術(shù)(LTALD)在柔性襯底上生長和制備二元金屬氧化物薄膜出發(fā),對這些制成的薄膜進(jìn)行了材料表征,結(jié)果顯示通過LTALD技術(shù)制備的薄膜和傳統(tǒng)ALD技術(shù)淀積的薄膜擁有相同的質(zhì)量。這一結(jié)果,使得在柔性襯底上低溫方法淀積薄膜成為可能,并且能夠成為未來薄膜器件的主要制備手段之一。其次,從基于LTALD制備的二元金屬氧化物的FRRAM器件著手,介紹了器件的制備方法,并研究和分析了基于TiN/Al2O3/ITO和TiN/HfO2/ITO結(jié)構(gòu)的器件的阻變特性、耐擦寫特性以及數(shù)據(jù)保持特性,并整理和總結(jié)了基于high-k薄膜和MIM結(jié)構(gòu)的FRRAM器件的電流機(jī)制。最后,通過使用堆棧結(jié)構(gòu),對FRRAM器件的性能進(jìn)行了優(yōu)化,并對堆棧結(jié)構(gòu)的厚度也進(jìn)行了優(yōu)化,通過優(yōu)化的器件顯示出了相當(dāng)優(yōu)異的阻變和數(shù)據(jù)保持性能,以及在擦寫過程中操作電壓的一致性和集中分布性。同時(shí),在通過對堆棧結(jié)構(gòu)FRRAM電流機(jī)制和阻抗分析,得出了FRRAM器件的微觀阻變機(jī)理和等效電路,為后來FRRAM器件的深入研究提供了思路。在本論文末尾,對本文的實(shí)驗(yàn)工作進(jìn)行了總結(jié)論述,并對FRRAM的未來和柔性電子的未來發(fā)展做出了展望。
[Abstract]:With the continuous development of semiconductor technology, more and more advanced and high-end electronic products are available. At the same time, thanks to the introduction of flexible concept machines by Nokia and Apple, People are looking to the future flexible electronic products. At present, the research of flexible electronic products is only in the exploratory stage, although some semiconductor manufacturers have begun to try to produce and sell flexible display products such as flexible LED. However, the performance of the product is still far from that of the silicon-based products based on CMOS system. In order to achieve this goal, the most basic work is to fabricate superior performance memory devices on flexible substrates. Its performance requirements are lower than other functional devices, such as logic devices, RF devices, sensor devices and so on. In addition, due to the continuous expansion of the information society and the increasing demand for data, the demand for storage density, speed, cost and power consumption is increasing. At present, the mainstream flash memory has been limited by its own structure. Faced with severe challenges, some new non-volatile memory began to enter the eyes of people, but these memories also have their own shortcomings, In recent years, it has been attracting more and more attention from industry and academia for its simple structure, strong microscopicity, long retention time, low operating voltage and compatibility with traditional CMOS process. In this paper, firstly, the advantages of RRAM devices compared with other emerging memory devices are discussed. At the same time, this paper introduces the advantage of the current thin film deposition technology, atomic layer deposition technology, and compares the advantages and disadvantages of some other thin film deposition technologies. By using the low temperature atomic layer deposition technology, we use LTALDon the flexible substrate, and compare the advantages and disadvantages of some other thin film deposition technologies on the flexible substrate by using the low temperature atomic layer deposition technology (LTALDD). Growth and preparation of binary metal oxide films, The results show that the films prepared by LTALD technology have the same quality as those deposited by traditional ALD technology. This result makes it possible to deposit thin films on flexible substrates at low temperature. And it can become one of the main fabrication methods of thin film devices in the future. Secondly, the fabrication methods of FRRAM devices based on binary metal oxides based on LTALD are introduced. The resistive characteristics, write-resistant characteristics and data retention characteristics of FRRAM devices based on TiN/Al2O3/ITO and TiN/HfO2/ITO structures are studied and analyzed. The current mechanism of FRRAM devices based on high-k thin films and MIM structures is summarized. Finally, by using stack structure, the current mechanism of FRRAM devices based on high-k thin film and MIM structure is summarized. The performance of FRRAM device is optimized, and the thickness of stack structure is optimized. The optimized device shows excellent resistance and data retention performance. At the same time, by analyzing the current mechanism and impedance of stack structure FRRAM, the micro resistance mechanism and equivalent circuit of FRRAM device are obtained. At the end of this paper, the experimental work of this paper is summarized and discussed, and the future of FRRAM and flexible electronics are prospected.
【學(xué)位授予單位】：復(fù)旦大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2013
【分類號】：TP333

【參考文獻(xiàn)】

相關(guān)期刊論文 前5條

1 魏波;呂U，

本文編號：1548873