本文關(guān)鍵詞： 有機二極管 存儲器 存儲機制 聚乙烯基咔唑 氧化石墨烯 聚甲基丙烯酸甲酯　出處：《南京郵電大學(xué)》2013年碩士論文　論文類型：學(xué)位論文

【摘要】：有機二極管電存儲器具有結(jié)構(gòu)簡單并且可設(shè)計性強，可以薄膜化，可以通過三維堆疊提高存儲密度，可以彎曲折疊等眾多優(yōu)點。有機二極管電存儲器作為替換或補充現(xiàn)有的無機半導(dǎo)體存儲技術(shù)的下一代數(shù)據(jù)存儲技術(shù)具有極大的研究價值和經(jīng)濟前景。但是目前有機二極管電存儲器研制工作還處于起步階段，存儲器件性能穩(wěn)定性以及存儲機制等問題亟待解決。因此設(shè)計制備存儲性能穩(wěn)定的器件并對其存儲機制深入研究具有重要意義。 本論文設(shè)計制備了一系列存儲性能穩(wěn)定的二極管器件并對其各自的工作機制進行了詳細(xì)探討，為具有普適性、可定量描述有機二極管存儲機制的物理模型提出，引導(dǎo)器件設(shè)計，，實現(xiàn)有機二極管電存儲器量產(chǎn)，提供了技術(shù)鋪墊。 （1）具有非易失性一次寫入多次讀取存儲功能的二極管電存儲器件Indium TinOxide/poly(N-vinylcarbazole)/SiO_2nanoparticles/poly(N-vinylcarbazole)/Aluminium被成功設(shè)計制備。二氧化硅納米粒在器件中的應(yīng)用使得器件在較低電壓下的開關(guān)電流比從20增大到了700，并且在較高電場下該器件還顯示出負(fù)微分電阻現(xiàn)象。對比發(fā)現(xiàn)兩層聚乙烯基咔唑材料薄膜之間的二氧化硅納米粒尺寸對提高該存儲器件的重復(fù)性以及開態(tài)信息維持時間具有重要作用。通過該存儲器件的電流與電壓特性關(guān)系進行理論模型擬合和器件結(jié)構(gòu)掃描電子顯微鏡表征對其存儲機制進行了研究，而其負(fù)微分電阻效應(yīng)的強度僅與聚乙烯基咔唑材料薄膜界面上的缺陷和電荷陷阱有關(guān)，因此植入更多電荷陷阱在聚乙烯基咔唑材料薄膜中就可以擴大負(fù)微分電阻效應(yīng)。 （2）研究了Indium Tin Oxide/Graphene Oxide/Aluminium結(jié)構(gòu)二極管器件存儲特性，發(fā)現(xiàn)器件幾何結(jié)構(gòu)和鋁電極厚度不同則器件存儲行為也會不同。當(dāng)鋁電極相對較厚時交叉點陣中器件顯示出三階存儲效應(yīng)，而對應(yīng)的交叉條形陣列中器件表現(xiàn)出了靜態(tài)隨機存儲特性。當(dāng)鋁電極厚度較薄時，上述器件均具有閃存特性。該二極管結(jié)構(gòu)器件不同存儲行為歸因于氧化石墨烯薄膜的氧化還原模式和程度不同所導(dǎo)致。 （3）研究了本課題組合成的小分子材料以及商業(yè)化的聚甲基丙烯酸甲酯材料的二極管電存儲特性，“電極/有機小分子/電極”結(jié)構(gòu)中不同電極、器件陣列和保護電流限制均會導(dǎo)致不同存儲特性。對Indium Tin Oxide/Polymethylmethacrylate/Aluminium結(jié)構(gòu)二極管器件研究發(fā)現(xiàn)具有穩(wěn)定的閃存特性，器件中聚甲基丙烯酸甲酯材料薄膜的掃描電子顯微鏡圖像顯示出有較多微孔分布，對比得出微孔是導(dǎo)致該器件實現(xiàn)閃存的主要原因。
[Abstract]:Organic diode electric memory has simple structure and strong designability. It can be thinned, and can increase the storage density by three dimensional stacking. The next generation data storage technology which can replace or supplement the existing inorganic semiconductor storage technology has great research value and economic prospect. The development of a machine diode electric memory is still in its infancy. The performance stability and storage mechanism of memory devices need to be solved urgently, so it is of great significance to design and fabricate devices with stable storage performance and to study the storage mechanism in depth. In this paper, a series of diode devices with stable storage performance are designed and fabricated, and their respective working mechanisms are discussed in detail. Guide device design, achieve organic diode storage mass production, provide a technical cushion. 1) Indium TinOxide/poly(N-vinylcarbazole)/SiO_2nanoparticles/poly(N-vinylcarbazole)/Aluminium, a diode electrical memory device with nonvolatile one-write multiple read memory function, has been successfully designed and fabricated. The application of silica nanoparticles in the device has resulted in the switching current ratio of the device from 20 to 20 at lower voltage. The device also showed negative differential resistance at high electric field. It was found that the size of silica nanoparticles between the two layers of polyvinylcarbazole films could improve the repeatability of the device; and. The on-state information maintenance time plays an important role. The storage mechanism is studied by theoretical model fitting and scanning electron microscope (SEM) characterization of the current and voltage characteristics of the device. However, the intensity of negative differential resistance effect is only related to the defects and charge traps at the interface of polyethylene based carbazole film, so the negative differential resistance effect can be expanded by embedding more charge traps in polyethylene based carbazole film. (2) the storage characteristics of Indium Tin Oxide/Graphene Oxide/Aluminium diodes are studied. It is found that the device storage behavior is different when the geometry of the device and the thickness of the aluminum electrode are different. When the aluminum electrode is relatively thick, the device displays the third-order storage effect in the intersecting dot array. The devices in the corresponding cross-bar array exhibit static random storage characteristics. When the thickness of the aluminum electrode is thin, The different storage behaviors of the diodes are attributed to the different redox modes and degrees of graphene oxide films. The diode storage characteristics of small molecular materials and commercial poly (methyl methacrylate) materials have been studied. Different electrodes in the structure of "electrode / organic small molecule / electrode" have been studied. Both device array and protection current limitation can lead to different storage characteristics. For Indium Tin Oxide/Polymethylmethacrylate/Aluminium diode devices, it is found that they have stable flash memory characteristics. The scanning electron microscope images of the poly (methyl methacrylate) film show that there are many micropores in the device, and it is found that the micropore is the main reason for the device to achieve flash memory.
【學(xué)位授予單位】：南京郵電大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2013
【分類號】：TN31;TP333

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