發(fā)布時間：2018-01-27 07:11

  本文關(guān)鍵詞： 嵌入式系統(tǒng) 阻變式存儲器(RRAM) 動態(tài)隨機(jī)存取存儲器(DRAM) 表征及測試方法 輻射　出處：《復(fù)旦大學(xué)》2012年碩士論文　論文類型：學(xué)位論文

【摘要】：近年來,隨著大規(guī)模、超大規(guī)模集成電路的不斷發(fā)展,嵌入式系統(tǒng)因其集成度高、運(yùn)行速度快、功耗低、可靠性好等特點(diǎn)得到廣泛應(yīng)用。作為嵌入式系統(tǒng)硬件中不可或缺的組成部分,嵌入式存儲器在半導(dǎo)體芯片中的作用非常重要,它的存儲特性直接決定了整個系統(tǒng)的工作性能。隨著數(shù)字、模擬電路的快速發(fā)展,為配合嵌入式系統(tǒng)整體性能的提升,各類新型的存儲器也不斷涌現(xiàn)出來。 本文針對組內(nèi)研發(fā)的阻變式存儲器和兩款新型的動態(tài)隨機(jī)存取存儲器在嵌入式系統(tǒng)中的應(yīng)用需求,聚焦于單元存儲性能的提升,以測試表征為手段,通過對實際芯片的測試反映出存儲器芯片的運(yùn)行效率和存儲特性。之后,根據(jù)測試結(jié)果的統(tǒng)計和分析,從設(shè)計方法、工藝條件和編程算法三個角度對存儲器的良率、數(shù)據(jù)保持時間、可制造性等方面進(jìn)行了優(yōu)化,以達(dá)到實際的應(yīng)用需求。 另外,本文還針對阻變式存儲器芯片在輻射領(lǐng)域中的應(yīng)用,對芯片的抗輻射能力進(jìn)行研究和分析。與普通的應(yīng)用環(huán)境相比,輻射會在器件內(nèi)部產(chǎn)生額外的缺陷,影響器件的性能,甚至導(dǎo)致整個系統(tǒng)無法正常工作。因此,對于存儲器在輻射領(lǐng)域的應(yīng)用,需要提出一套能夠表征輻照性能的參數(shù)以及相應(yīng)的測試方法。從測試結(jié)果來看,現(xiàn)階段的阻變存儲單元具備了很好的抗輻射特性,但芯片的外圍電路還需要引入必要的抗輻射措施進(jìn)行加固。
[Abstract]:In recent years, with the continuous development of large-scale and VLSI, embedded systems have high integration, high speed and low power consumption. As an indispensable part of embedded system hardware, embedded memory plays an important role in semiconductor chips. With the rapid development of digital and analog circuits, all kinds of new types of memory are emerging in order to improve the overall performance of embedded system. Aiming at the application demand of resistive memory and two new types of dynamic random access memory in embedded system, this paper focuses on the improvement of cell storage performance by means of testing and characterization. Through the actual chip test reflects the memory chip operation efficiency and storage characteristics. Then, according to the test results statistics and analysis, from the design method. In order to meet the practical application requirements, the process conditions and programming algorithms are optimized in terms of memory yield, data retention time and manufacturability. In addition, aiming at the application of the resistive memory chip in the radiation field, the anti-radiation ability of the chip is studied and analyzed, which is compared with the common application environment. Radiation will cause additional defects in the device, affect the performance of the device, and even lead to the entire system can not work properly. Therefore, for memory applications in the field of radiation. It is necessary to propose a set of parameters that can characterize the radiation performance and the corresponding testing methods. From the test results, the resistive memory cells have good radiation resistance characteristics. But the peripheral circuit of the chip also needs to introduce the necessary anti-radiation measures to strengthen.
【學(xué)位授予單位】：復(fù)旦大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2012
【分類號】：TP333

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 何玉娟;劉潔;恩云飛;羅宏偉;師謙;;SOI MOSFET抗輻射加固的常用方法與新結(jié)構(gòu)[J];半導(dǎo)體技術(shù);2008年03期

2 何君;微電子器件的抗輻射加固技術(shù)[J];半導(dǎo)體情報;2001年02期

3 汪昌州;翟繼衛(wèi);姚熹;;基于相變存儲器的相變存儲材料的研究進(jìn)展[J];材料導(dǎo)報;2009年15期

4 張晶,曾憲云;嵌入式系統(tǒng)概述[J];電測與儀表;2002年04期

5 李桃生;陳軍;王志強(qiáng);;空間輻射環(huán)境概述[J];輻射防護(hù)通訊;2008年02期

6 于小亮;;嵌入式系統(tǒng)應(yīng)用現(xiàn)狀及發(fā)展趨勢概述[J];電腦知識與技術(shù);2008年28期

7 何立民;嵌入式系統(tǒng)的定義與發(fā)展歷史[J];單片機(jī)與嵌入式系統(tǒng)應(yīng)用;2004年01期

8 時萬春;;集成電路測試技術(shù)的新進(jìn)展[J];電子測量與儀器學(xué)報;2007年04期

9 馬義德,劉映杰,張新國;嵌入式系統(tǒng)的現(xiàn)狀及發(fā)展前景[J];信息技術(shù);2001年12期

10 衛(wèi)寧;王劍峰;杜婕;周聰莉;郭旗;文林;;抗輻射加固封裝國產(chǎn)存儲器的電子輻照試驗[J];信息與電子工程;2010年01期

，

本文編號：1467918