發(fā)布時(shí)間：2018-01-19 15:23

  本文關(guān)鍵詞： Flash存儲器 Dickson電荷泵 四相位電荷泵 交叉耦合電荷泵　出處：《西安電子科技大學(xué)》2013年碩士論文　論文類型：學(xué)位論文

【摘要】：Flash存儲器目前是非揮發(fā)性存儲器電路中最重要的一種。在過去的十幾年里，它廣泛的應(yīng)用于各種便攜式電子產(chǎn)品中。Flash存儲器的編程和擦除機(jī)制主要包括兩種：熱電子注入（CHE）以及FN隧穿效應(yīng)，這兩種操作一般都需要很高的電壓去完成。電荷泵電路作為片內(nèi)的高壓產(chǎn)生電路是Flash存儲器系統(tǒng)中必不可少的組成部分。 電荷泵電路是一種由電容和開關(guān)陣列組成的可以在片上集成的DC-DC轉(zhuǎn)換器。本文首先回顧了各種不同類型的電荷泵電路，然后重點(diǎn)介紹了應(yīng)用廣泛的傳統(tǒng)Dickson電荷泵，分析了Dickson電荷泵的穩(wěn)態(tài)特性和動態(tài)特性并且推導(dǎo)出了輸出電壓，上升時(shí)間等重要參數(shù)的公式。 為了滿足整個Flash存儲器芯片的要求，本論文設(shè)計(jì)了一種基于四相位電荷泵的電荷泵系統(tǒng)，包括電荷泵核，壓控振蕩器，，四相位時(shí)鐘發(fā)生器，比較器以及穩(wěn)壓電路。同時(shí)對各個子電路模塊以及整個電荷泵系統(tǒng)進(jìn)行了仿真，結(jié)果顯示該電荷泵系統(tǒng)達(dá)到了整個Flash存儲器的設(shè)定要求。為了進(jìn)一步提高電荷泵系統(tǒng)的效率，本文又設(shè)計(jì)了一種基于交叉耦合型倍壓器的電荷泵并完成了相應(yīng)的仿真，然后在本文中對交叉耦合型電荷泵和四相位電荷泵的性能進(jìn)行了對比。 最后，本文采用宏力半導(dǎo)體0.13μmCMOS工藝完成了四相位電荷泵系統(tǒng)的版圖設(shè)計(jì)，并且給出了整個Flash芯片的版圖。
[Abstract]:Flash memory is currently one of the most important non-volatile memory circuits. It is widely used in various portable electronic products. Flash memory programming and erasure mechanisms mainly include two types: hot electron injection (che) and FN tunneling effect. The charge pump circuit is an indispensable part of the Flash memory system as a high voltage generation circuit. Charge pump circuit is a kind of DC-DC converter composed of capacitors and switch arrays that can be integrated on a chip. In this paper, various types of charge pump circuits are reviewed. Then the conventional Dickson charge pump which is widely used is introduced. The steady and dynamic characteristics of the Dickson charge pump are analyzed and the output voltage is derived. Formula for important parameters such as rise time. In order to meet the requirements of the whole Flash memory chip, this paper designs a charge pump system based on four-phase charge pump, including charge pump core, voltage-controlled oscillator, four-phase clock generator. The comparator and the voltage stabilizer circuit are also simulated. At the same time, each sub-circuit module and the whole charge pump system are simulated. The results show that the charge pump system can meet the requirements of the whole Flash memory, in order to further improve the efficiency of the charge pump system. In this paper, a charge pump based on cross coupling multiplier is designed and simulated. Then, the performance of cross coupling charge pump and four phase charge pump are compared in this paper. Finally, the layout design of the four-phase charge pump system is completed by using the macro force semiconductor 0.13 渭 mCMOS process, and the layout of the whole Flash chip is given.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2013
【分類號】：TP333;TN432

【參考文獻(xiàn)】

相關(guān)期刊論文 前3條

1 潘武;趙偉;;片上電感的研究[J];重慶郵電學(xué)院學(xué)報(bào)(自然科學(xué)版);2006年01期

2 宋國建;;電荷泵穩(wěn)壓電路[J];電工電氣;2010年02期

3 曹香凝,汪東旭,嚴(yán)利民;DC-DC電荷泵的研究與設(shè)計(jì)[J];通信電源技術(shù);2004年05期

本文編號：1444756