發(fā)布時(shí)間：2018-01-05 03:01

  本文關(guān)鍵詞：分立電荷俘獲型存儲(chǔ)器模擬研究　出處：《安徽大學(xué)》2012年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 電荷俘獲存儲(chǔ)器 非揮發(fā)存儲(chǔ)器 材料計(jì)算 存儲(chǔ)窗口

【摘要】：隨著傳統(tǒng)浮柵存儲(chǔ)器的尺寸縮小受到限制,急需要發(fā)展下一代非揮發(fā)存儲(chǔ)器,目前對(duì)新一代非揮發(fā)存儲(chǔ)器的研究非常廣泛,有鐵電存儲(chǔ)器,阻變式存儲(chǔ)器、納米晶存儲(chǔ)器,電荷陷阱存儲(chǔ)器、相變存儲(chǔ)器、有機(jī)物存儲(chǔ)器等。其中分立電荷俘獲型存儲(chǔ)器的研究非常之多,其中電荷陷阱存儲(chǔ)器(CTM:charge trapping memory)又是該領(lǐng)域的研究主流,它憑借其工藝與目j前主流CMOS工藝基本兼容的特性,CTM具有極大的潛力成為下一代非揮發(fā)存儲(chǔ)器,從而率先占領(lǐng)新的存儲(chǔ)器市場(chǎng)。 傳統(tǒng)浮柵存儲(chǔ)器flash在小尺寸下存在嚴(yán)重的數(shù)據(jù)保持缺陷,浮柵阻擋層變薄,帶來比較嚴(yán)重的信息泄露危險(xiǎn),因?yàn)楸〉淖钃鯇釉赑/E過程中更容易產(chǎn)生缺陷,從而導(dǎo)致存儲(chǔ)電荷一次性泄露。分立電荷俘獲型存儲(chǔ)器從理論上很好的解決這一問題,它利用電荷存儲(chǔ)層中的分立陷阱來存儲(chǔ)電荷的,從而將存儲(chǔ)的電荷分立化,就算阻擋層中出現(xiàn)缺陷,也只能引起離缺陷最近的極小部分存儲(chǔ)電荷的泄露,并不影響其存儲(chǔ)信息的狀態(tài),從而保證存儲(chǔ)器的正常工作。關(guān)于分立電荷俘獲型存儲(chǔ)器研究主要有三個(gè)大的方向,異是從結(jié)構(gòu)上對(duì)電荷進(jìn)行分立存儲(chǔ),如目前研究很多的納米晶存儲(chǔ)器；二是直接從存儲(chǔ)材料入手,利用存儲(chǔ)信息的化合物材料的分立陷阱來實(shí)現(xiàn)存儲(chǔ)功能；三是將以上兩種方法結(jié)合起來。 采用納米晶作為電荷存儲(chǔ)介質(zhì),這種利用分立的納米晶顆粒來實(shí)現(xiàn)電荷的分立存儲(chǔ),避免了傳統(tǒng)浮柵閃存中因氧化層厚度變薄而引起信息泄漏的問題,在具有較好數(shù)據(jù)保持能力的情況下,能夠相當(dāng)程度的降低存儲(chǔ)器件的操作電壓。因而它也是下一代非易失性存儲(chǔ)器的有力競(jìng)爭(zhēng)者之一,引起廣大研究者極大的興趣。盡管分立電荷俘獲型納米晶存儲(chǔ)器具有較快的擦／寫速度、較低的操作電壓等優(yōu)勢(shì),但是尺寸縮小后,納米晶的數(shù)量將會(huì)存在很大的限制,因?yàn)榧{米晶數(shù)量越多,顆粒直徑越大,存儲(chǔ)性能越優(yōu)越,這無疑是一對(duì)矛盾,而且不同器件在同一生產(chǎn)工藝下出來的數(shù)量可能都會(huì)波動(dòng),器件的均勻性也會(huì)受到較大影響。因此,我們?nèi)孕柩芯啃阅芨鼮槔硐氲姆且资源鎯?chǔ)器。 與此同時(shí)發(fā)展起來的電荷陷阱存儲(chǔ)器利用的是俘獲層中材料本身的缺陷來存儲(chǔ)電荷,利用不同材料中的陷阱,甚至通過對(duì)材料進(jìn)行改性來獲得更多的缺陷,進(jìn)一步實(shí)現(xiàn)信息電荷的分立存儲(chǔ),它同時(shí)還可以實(shí)現(xiàn)多位存儲(chǔ),進(jìn)而可以在相同的面積、技術(shù)條件下獲得更高的存儲(chǔ)密度,目前主流的電荷陷阱存儲(chǔ)器結(jié)構(gòu)SONOS至少可以達(dá)到22nm的工藝節(jié)點(diǎn)。由此可見,電荷陷阱存儲(chǔ)器無疑有效的解決了很多問題,比如傳統(tǒng)浮柵在小尺寸下的可靠性下降問題,突破了納米晶存儲(chǔ)器尺寸進(jìn)一步縮小的瓶頸等等。 綜上,本文對(duì)分離電荷俘獲型存儲(chǔ)器展開了一系列的模擬研究,文章首先簡(jiǎn)單介紹了Flash memory的原理、結(jié)構(gòu)與應(yīng)用,接著突出介紹分立電荷俘獲型存儲(chǔ)器的主要結(jié)構(gòu)原理及性能研究情況,第三章主要研究了納米晶存儲(chǔ)器結(jié)構(gòu)對(duì)其存儲(chǔ)性能的相關(guān)影響,第四章著重對(duì)CTM存儲(chǔ)材料的模擬選取,以及其性能參 數(shù)指標(biāo)進(jìn)行了著重的研究,采用新的視角與方法對(duì)CTM進(jìn)一步研究起到了非常重要的借鑒作用,即采用了第一性原理對(duì)一些材料進(jìn)行了深入的計(jì)算和分析,試圖給CTM材料選取提供一套科學(xué)的解決方法,同時(shí)對(duì)存儲(chǔ)材料中有效陷阱的選取也做了一定的模擬研究,從而進(jìn)一步指導(dǎo)CTM實(shí)驗(yàn)的進(jìn)行,對(duì)降低CTM研究成本,縮短其研究周期。最后綜合總的研究,對(duì)本文的工作進(jìn)行了總結(jié)跟展望。
[Abstract]:Along with the traditional floating gate memory size is limited, the urgent need to develop the next generation nonvolatile memory, the current research on a new generation of non-volatile memory is very extensive, with ferroelectric memory, resistive memory, nanocrystal memory, charge trap memory, memory, memory and other organic matter. The study of discrete charge trapping memory is very much, the charge trap memory (CTM:charge trapping memory) is the mainstream of the field, with its basic characteristics compatible with mainstream CMOS process technology and its J before, CTM has great potential to become the next generation nonvolatile memory, and memory to occupy the new market.
The traditional floating gate memory flash has serious defects on data retention in small sizes, the floating barrier layer becomes thin, bring more serious risk of information leakage, because the thin barrier layer in the P/E process is more prone to defects, resulting in storage charges leak at one time. The discrete charge trapping memory in theory is a good solution this problem, it uses the charge storage layer of discrete traps to store charge, which will store the charge separation, even if there is some defect in barrier layer, also can cause defects from the recent tiny part of stored charge leakage, does not affect the storage of information, so as to ensure the normal work of the memory. Study on discrete charge trapping memory there are three major directions, is different from the structure of the discrete storage charge, such as the current study of nanocrystal memory two is directly from the many; In the storage material, the storage function is realized by the discrete trap of the compound material that stores information; three is to combine the above two methods.
The nanocrystals as a charge storage medium, discrete storage such use of discrete nanocrystals to achieve charge, to avoid the traditional floating gate flash memory because of the oxide layer thickness caused by the problem of information leakage in the good data retention situation, to reduce the operating voltage when the storage device level. It is the next generation of non contenders lost memory, caused by the interests of many researchers. Although the discrete charge trapping nanocrystal memory has a faster Wipe / write speed, low voltage operation and other advantages, but the size reduced, the number of nanocrystals will have the very big limitation, because the more the number of nano particle diameter, the greater the storage performance more superior, this is a contradiction, and the number of different devices in the same production process may fluctuate,. The uniformity of the piece will also be greatly affected. Therefore, we still need to study the more ideal nonvolatile memory.
At the same time the development of charge trap memory using the defective material trapping layer itself to store charge, using different materials in the trap, even through the material was modified to obtain more defects, further realize the separation of information storage charge, and at the same time it can also realize storage, which can be in the same area to obtain higher storage density, technical conditions, process node current SONOS charge trap memory structure of the mainstream can reach at least 22nm. Thus, charge trap memory undoubtedly effective to solve a lot of problems, such as the reliability of traditional floating gate in small size of the decline, to break the bottleneck of nanocrystal memory size is further reduced and so on.
In summary, this paper carried out a series of simulation studies on the separation of charge trapping memory, this paper introduced the principle of Flash memory, structure and application, and then highlight main structure principle and Performance Research of discrete charge trapping memory, the third chapter mainly studies the nanocrystal memory structure effect on the storage performance the fourth chapter focuses on the simulation of CTM, storage material selection, as well as its performance.
The number of indicators were emphatically studies with a new perspective and methods to a very important reference for the further study of CTM, which is the first principle calculation is carried out in-depth analysis on some materials, trying to provide a scientific method to solve the CTM material selection, and selection of effective trap storage the material was also performed in a simulation study, to further guide the CTM experiment, CTM research to reduce the cost, shorten the research period. Finally the general research, this paper summarizes the work and prospects.

【學(xué)位授予單位】：安徽大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2012
【分類號(hào)】：TP333

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