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不同碳源和反應(yīng)溫度對(duì)原位合成SiC-TiC超細(xì)粉末的影響

發(fā)布時(shí)間:2019-04-22 07:33
【摘要】:以碳化硅(SiC)、二氧化鈦(TiO_2)和不同種類碳源為初始原料,采用碳熱還原法在氬氣氣氛下原位合成SiCTiC超細(xì)粉末。探討了不同碳源和不同反應(yīng)溫度對(duì)所合成的SiC-TiC超細(xì)粉末的物相組成和顯微形貌的影響。采用X-射線衍射儀(XRD)、激光粒度分析儀、掃描電鏡(SEM)等手段對(duì)所合成的SiC-TiC超細(xì)粉末進(jìn)行表征。實(shí)驗(yàn)結(jié)果表明,以蔗糖為碳源合成SiC-TiC超細(xì)粉末的適宜條件為1450℃保溫2 h;以炭黑或葡萄糖為碳源合成超細(xì)粉末的適宜條件為1500℃保溫2 h。三種碳源中以炭黑為碳源時(shí)所合成的SiC-TiC超細(xì)粉末粒度最小且合成出的粉末樣品分散性好,大部分球狀顆粒在0.5~1.0μm左右。在SiC粉末中原位合成的TiC顆粒,以粒徑在0.1~0.2μm左右的不規(guī)則的多樣化結(jié)構(gòu)顆粒存在。
[Abstract]:Using silicon carbide (SiC), titanium dioxide (TiO_2) and different kinds of carbon sources as raw materials, SiCTiC ultrafine powders were in situ synthesized in argon atmosphere by carbothermal reduction method. The effects of different carbon sources and reaction temperatures on the phase composition and microstructure of SiC-TiC ultrafine powders were investigated. The SiC-TiC ultrafine powder was characterized by X-ray diffractometer (XRD), laser particle size analyzer and scanning electron microscope (SEM). The results showed that the optimum conditions for the synthesis of ultra-fine powder of SiC-TiC were 1450 鈩,

本文編號(hào):2462627

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