【摘要】：隨著現(xiàn)代科學(xué)技術(shù)的不斷提高,可調(diào)諧微波器件的大量需求,具有可調(diào)諧性能的微波電磁材料,如鐵電介質(zhì)材料和鐵磁材料,成為重要的研究課題。鈦酸鍶鋇作為微波介電陶瓷重要體系之一,由于其具有介電常數(shù)大、介電損耗低、介電可調(diào)諧性好等優(yōu)點(diǎn),在移相器、可重構(gòu)天線等可調(diào)諧微波器件領(lǐng)域有廣泛的應(yīng)用前景。微波軟磁薄膜材料是當(dāng)今微波集成電路領(lǐng)域的重要材料,它能夠有效提高微磁電感的電感量,利用其旋磁性可以制造環(huán)行器,利用其磁導(dǎo)率調(diào)控可以制造可調(diào)諧天線等。軟磁薄膜的鐵磁共振頻率fFMR主要是由其飽和磁化強(qiáng)度4πMs和面內(nèi)單軸各向異性場(chǎng)HK決定的。各向異性場(chǎng)HK作為外稟參量對(duì)制備條件、缺陷等比較敏感,可以更容易的提高1-2個(gè)數(shù)量級(jí),所以微波金屬軟磁薄膜的研究主要集中在提高其單軸各向異性場(chǎng)。本論文的主要研究工作有:(1)利用固相合成法制備了不同Ba/Sr比下的Ba_xSr_(1-x)TiO_3陶瓷,研究了x分別為0、0.1、0.2、0.25、0.3、0.325、0.35、0.4、0.425、0.45時(shí)BaxSr1-x Ti O3材料的微結(jié)構(gòu)和介電性能,探索了不同Ba/Sr對(duì)材料微結(jié)構(gòu)和介電性能的影響。隨著Ba含量的增加,樣品微波介電常數(shù)從286增加到1305,介電損耗從0.624×10~(-3)增加到2.426×10~(-3),介電調(diào)諧率最大可達(dá)30%。(2)利用固相合成法制備了摻雜30%Mg O、60%Mg O,以及摻雜60%Mg O/0.2%Mn O_2的BST基微波復(fù)合陶瓷。研究了摻雜物對(duì)不同復(fù)合陶瓷微結(jié)構(gòu)和介電性能的影響。隨著Mg O含量增加,樣品介電常數(shù)從1656.3減小到86.1,介電損耗從2.49×10~(-3)增加到4.46×10~(-3);摻雜Mn O2后,介電常數(shù)再次減小至83,同時(shí)介電損耗也下降至4.06×10~(-3)。原因是Mg O的摻雜會(huì)導(dǎo)致樣品晶格常數(shù)增大,介電常數(shù)減小,介電損耗增大,介電調(diào)諧率減小。Mn O2摻雜則會(huì)環(huán)繞在Mg O的表面,從而阻止Mg2+進(jìn)入BST晶格,使得其晶格常數(shù)增大的幾率降低。(3)利用磁控濺射成分梯度濺射(CGS)方法,以單晶Si(100)為襯底,生長(zhǎng)了約100 nm厚的FeCoB軟磁薄。測(cè)得CGS-Fe_(70)Co_(30)B的飽和磁化強(qiáng)度4πMS從16.3 k G下降到13.5 k G,單軸各向異性場(chǎng)HK從180.6 Oe增到295.5 Oe,鐵磁共振頻率f_(FM)R從4.82 GHz增加到5.62 GHz。利用X射線原子吸收譜(XAS)揭示了飽和磁化強(qiáng)度減小主要原因是由于Fe原子和B原子的雜化。
[Abstract]:With the development of modern science and technology, there is a great demand for tunable microwave devices. Microwave electromagnetic materials with tunable properties, such as ferrodielectric materials and ferromagnetic materials, have become an important research topic. Barium strontium titanate (barium strontium titanate) is one of the important microwave dielectric ceramics. Because of its high dielectric constant, low dielectric loss and good dielectric tunability, barium strontium titanate has a wide application prospect in the field of phase shifter, reconfigurable antenna and other tunable microwave devices. Microwave soft magnetic thin film is an important material in the field of microwave integrated circuits. It can effectively improve the inductance of micromagnetoelectric inductance, make circulators with its gyromagnetic properties, and make tunable antennas by using its permeability regulation and so on. The ferromagnetic resonance frequency (fFMR) of soft magnetic thin films is mainly determined by the saturation magnetization of 4 蟺 Ms and the in-plane uniaxial anisotropic field HK. The anisotropic field HK is sensitive to the preparation conditions, defects and so on, and can increase 1-2 orders of magnitude more easily, so the study of microwave metal soft magnetic thin film is mainly focused on improving its uniaxial anisotropic field. The main work of this thesis is as follows: (1) Ba_xSr_ (1-x) TiO_3 ceramics with different Ba/Sr ratios were prepared by solid-state synthesis. The microstructure and dielectric properties of BaxSr1-x Ti O 3 materials with x = 0. 1 / 0. 2 ~ 0. 2 ~ 0. 25 ~ 0. 25 ~ 0. 3 ~ 0. 325 ~ 0. 35 ~ 0. 35 ~ 0. 45 and the effects of different Ba/Sr on the microstructure and dielectric properties of BaxSr1-x Ti / O _ 3 were investigated. With the increase of Ba content, the microwave dielectric constant and dielectric loss increased from 0.624 脳 10 ~ (-3) to 2.426 脳 10 ~ (-3), respectively. The maximum dielectric tuning rate can be up to 30. (2) 30%Mg O _ (60) mg O doped and 60%Mg O/0.2%Mn O _ (2) doped BST based microwave composite ceramics were prepared by solid state synthesis. The effects of dopants on the microstructure and dielectric properties of different composite ceramics were studied. With the increase of Mg O content, the dielectric constant decreased from 1656.3 to 86.1, and the dielectric loss increased from 2.49 脳 10 ~ (-3) to 4.46 脳 10 ~ (-3). After doping Mn O 2, the dielectric constant decreases to 83 and the dielectric loss decreases to 4.06 脳 10 ~ (-3). The reason is that doping of Mg O leads to increase of lattice constant, decrease of dielectric constant, increase of dielectric loss and decrease of dielectric tuning rate. Mn O 2 doping will surround the surface of Mg O, thus preventing Mg2 from entering BST lattice. The probability of increasing lattice constant is decreased. (3) FeCoB soft magnetic thin films with thickness of about 100 nm have been grown by magnetron sputtering component gradient sputtering (CGS) method and single crystal Si (100) substrates. The saturation magnetization of CGS-Fe_ (70) Co_ (30) B decreased from 16.3kG to 13.5 KG, and the uniaxial anisotropic field HK increased from 180.6 Oe to 295.5 Oe,. Ferromagnetic resonance frequency f _ (FM) R increased from 4.82 GHz to 5.62 GHz. X-ray atomic absorption spectroscopy (XAS) shows that the main reason for the decrease of saturation magnetization is the hybridization of Fe atom and B atom.
【學(xué)位授予單位】：青島大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：TQ174.756
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本文編號(hào)：2328630