【摘要】：具有ABO3型結(jié)構(gòu)的Ba Ti O3基及其固溶體陶瓷介質(zhì)材料是制備多層陶瓷電容器的重要原料。通常采用在Ba Ti O3體系中引入其他元素的方式,用于改變其微觀結(jié)構(gòu),從而改變其介電性能,達(dá)到實(shí)際應(yīng)用的要求。采用固相反應(yīng)法制備Dy2O3、Nd2O3、Y2O3以及Ca O摻雜的Ba Zr0.1Ti0.9O3陶瓷粉體,采用液相包覆法在制得BZT基陶瓷粉體表面包覆Al2O3。根據(jù)阿基米德排水法對(duì)試樣的體積密度進(jìn)行了測(cè)試;采用XRD分析測(cè)試燒成后的試樣的物相組成以及晶格結(jié)構(gòu);采用SEM分析觀察燒成后的試樣的表面及斷面形貌。采用電容測(cè)量?jī)x測(cè)試試樣的介電性能。研究所得結(jié)果表明:隨著Dy2O3摻雜量的增加,試樣的室溫介電常數(shù)εr逐漸增加,試樣的室溫介電損耗tanδ稍有增加之后逐漸減小。隨著Nd2O3摻雜量的增加,試樣的室溫介電常數(shù)εr逐漸增加,而在Nd2O3的摻雜量較小時(shí),試樣的介電損耗tanδ明顯地增大,而后試樣的介電損耗tanδ逐漸減小。當(dāng)Y2O3的摻雜量為0.05mol%時(shí),材料的室溫介電損耗達(dá)到最小值,此時(shí)的介電常數(shù)在2032~2168之間,當(dāng)體系中Y2O3的量增加時(shí),試樣的介電常數(shù)基本保持逐步升高的趨勢(shì),當(dāng)摻雜量較大時(shí),又有一定程度的降低。隨著Ca O加入量的增加,試樣的室溫介電常數(shù)增加,而試樣的介電損耗變化與摻雜量呈現(xiàn)非線性關(guān)系,介電常數(shù)隨溫度變化的變化率逐漸減小,且居里峰向低溫方向移動(dòng)。隨著Al2O3包覆量不斷增加,試樣的介電常數(shù)逐漸降低,而試樣的介電損耗逐漸增高,電容變化率△C/C逐漸降低,并且居里峰向低溫方向移動(dòng)。
[Abstract]:Ba Ti O3 base with ABO3 structure and its solid solution ceramic dielectric material are important materials for the preparation of multilayer ceramic capacitors. The method of introducing other elements into Ba Ti O 3 system is usually used to change the microstructure of Ba Ti O3 system, thus to change its dielectric properties and meet the requirements of practical application. Dy2O3,Nd2O3,Y2O3 and Ca O doped Ba Zr0.1Ti0.9O3 ceramic powders were prepared by solid state reaction. The surface of BZT based ceramic powders was coated with Al2O3. by liquid phase coating method. The bulk density of the samples was measured according to Archimedes drainage method; the phase composition and lattice structure of the sintered samples were measured by XRD analysis; and the surface and cross section morphology of the sintered samples were observed by SEM analysis. The dielectric properties of the samples were measured by capacitance measuring instrument. The results show that the dielectric constant 蔚 r increases gradually with the increase of Dy2O3 doping content, and the dielectric loss tan 未 decreases gradually after a slight increase in the dielectric loss at room temperature. With the increase of Nd2O3 doping, the dielectric constant 蔚 r increases at room temperature, but the dielectric loss tan 未 increases obviously when the doping amount of Nd2O3 is small, and then the dielectric loss tan 未 decreases gradually. When the doping amount of Y2O3 is 0.05 mol%, the dielectric loss at room temperature reaches the minimum, and the dielectric constant is between 2032 and 2168. When the content of Y2O3 in the system increases, the dielectric constant of the sample basically keeps the trend of increasing gradually. When the doping amount is large, there is a certain degree of reduction. With the increase of Ca O content, the dielectric constant of the sample increases at room temperature, while the dielectric loss of the sample shows a nonlinear relationship with the doping amount, the rate of change of the dielectric constant decreases with the change of temperature, and the Curie peak moves towards low temperature. With the increasing of Al2O3 coating, the dielectric constant of the sample decreases gradually, while the dielectric loss of the sample increases, the change rate of capacitance C / C decreases, and the Curie peak moves towards low temperature.
【學(xué)位授予單位】：華北理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TQ174.1

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 王曉鳳;曲遠(yuǎn)方;李小燕;李遠(yuǎn)亮;;La_2O_3對(duì)Ba_(0.92)Sr_(0.08)Ti_(0.9)Sn_(0.1)O_3介質(zhì)瓷結(jié)構(gòu)及性能的影響[J];壓電與聲光;2009年04期

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本文編號(hào)：2313790