【摘要】：靜電吸盤是半導(dǎo)體工藝中的硅片夾持工具。靜電吸盤相對于其他硅片夾持技術(shù)有著明顯優(yōu)勢,但靜電吸盤相關(guān)技術(shù)在國內(nèi)卻基本是空白一片。本文的目的即研究探索靜電吸盤相關(guān)技術(shù)。典型的靜電吸盤夾持系統(tǒng)一般是一個三明治結(jié)構(gòu):上下兩層為電極,中間夾著一層電介質(zhì)。而在實際簡單的應(yīng)用中,硅片充當上表面的電極,下電極和電介質(zhì)被整合制造在一個器件中,即稱為靜電吸盤。靜電吸盤是以靜電吸附為基本原理在施加外部高壓后,通過靜電吸盤對硅片的庫侖吸附力或J-R吸附力來固定硅片的。本文根據(jù)靜電吸盤工作機理設(shè)計了一款三層型結(jié)構(gòu)靜電吸盤(J-R層、電極層、基底層),并通過各層功能需求選擇其制造材料及工藝�；讓舆x擇導(dǎo)熱性良好并具有優(yōu)良綜合性能的氮化鋁材料,并選擇HTCC的方法作為基底層制造工藝;電極層選擇具有優(yōu)異的常溫導(dǎo)電性、硬度、附著性及耐彎折性的銀漿材料通過絲網(wǎng)印刷技術(shù)制成;J-R層作為J-R型靜電吸盤的重要功能部分先確定選用氮化鋁作為其主體材料,并通過添加調(diào)阻劑來調(diào)節(jié)J-R層體電阻率。本文在第四章中詳述了J-R層的設(shè)計工作,通過對材料導(dǎo)電機理及滲流理論的研究,選擇了氮化鈦作為J-R層的調(diào)阻劑,并對添加不同TiN含量的J-R層式樣片進行了組織分析,AlN/TiN復(fù)合陶瓷中組織致密其中并無雜質(zhì)相影響。之后測量不同TiN含量的J-R層試樣片體電阻率及在300V、500V、800V下對硅片的吸附力。綜合測試結(jié)果分析知隨著TiN含量的增加J-R層整體電阻率呈下降趨勢且在TiN增至15%時J-R層體電阻率降至109Ω·cm數(shù)量級基本滿足J-R層功能性需要,而吸附力則隨著TiN含量的增加而不斷增加,無論在300V,500V還是800V電壓下TiN含量為15%的樣片都具有較大的吸附力,這與預(yù)期中體電阻率與吸附力的關(guān)系相符合。
[Abstract]:Electrostatic sucker is a silicon wafer clamping tool in semiconductor process. Compared with other silicon wafer gripping technology, electrostatic sucker has obvious advantages, but electrostatic sucker technology is basically blank in our country. The purpose of this paper is to study and explore the related technology of electrostatic sucker. A typical electrostatic chuck gripping system is usually a sandwich structure: the upper and lower layers are electrodes with a layer of dielectric in the middle. In practical applications, the silicon wafer acts as the electrode on the upper surface, and the lower electrode and dielectric are integrated into one device, called electrostatic sucker. Electrostatic chuck is based on electrostatic adsorption principle, after applying external high pressure, the silicon wafer is fixed by Coulomb adsorption force or J-R adsorption force of electrostatic sucker. A three-layer electrostatic sucker (J-R layer, electrode layer, base layer) is designed according to the working mechanism of electrostatic sucker, and its manufacturing material and process are selected according to the functional requirements of each layer. Aluminum nitride materials with good thermal conductivity and excellent comprehensive properties are selected as the base layer manufacturing process, and the electrode layer selection has excellent electrical conductivity and hardness at room temperature. The adhesion and flexural resistance of silver paste material is made by screen printing technology. The important function part of J-R electrostatic sucker is to select aluminum nitride as its main material, and adjust the resistivity of J-R layer by adding resistive agent. In chapter 4, the design of J-R layer is described in detail. Through the study of conductive mechanism and percolation theory, titanium nitride is selected as resistive adjuster of J-R layer. The microstructure of J-R laminated samples with different TiN content was analyzed. The microstructure of AlN / tin composite ceramics was densified and there was no impurity phase effect. The bulk resistivity of J-R layer samples with different TiN content and the adsorption force on silicon wafer at 300V ~ 500V ~ (-800V) were then measured. The comprehensive test results show that the overall resistivity of J-R layer decreases with the increase of TiN content, and when TiN increases to 15, the bulk resistivity of J-R layer decreases to 109 惟 cm to basically meet the functional needs of J-R layer. However, the adsorption power increases with the increase of TiN content. Both the sample with TiN content of 15% at 300V / 500V or 800V voltage have higher adsorption capacity, which is consistent with the expected relationship between the midbody resistivity and the adsorption capacity.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TQ174.7

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本文編號：2164050