本文選題：碘化亞銅 + 高透過(guò)率��； 參考：《濟(jì)南大學(xué)》2015年碩士論文

【摘要】：碘化亞銅(CuI)具有三種主要的晶體結(jié)構(gòu),其中γ-CuI是一種寬禁帶p型半導(dǎo)體材料,禁帶寬度為3.1 eV,在可見(jiàn)光范圍內(nèi)透明,且電阻率較低,適合應(yīng)用于LED和染料敏化電池等光電子器件中。本文利用銅膜碘化法和真空熱蒸發(fā)法制備CuI薄膜,探究了不同生長(zhǎng)條件對(duì)其透明導(dǎo)電性能的影響,制備出高透過(guò)率、導(dǎo)電性能好的CuI薄膜,并初步嘗試將其應(yīng)用于全固態(tài)染料敏化電池中。具體研究?jī)?nèi)容和結(jié)果如下:1.采用銅膜碘化法制備CuI薄膜,分別研究了銅膜制備和碘化過(guò)程中各實(shí)驗(yàn)條件對(duì)CuI薄膜形貌、晶體結(jié)構(gòu)、透過(guò)率和電學(xué)性能的影響。結(jié)果表明,銅膜的制備條件對(duì)CuI薄膜性能的影響并不大;碘化過(guò)程中,碘量是影響CuI薄膜的關(guān)鍵因素,這與CuI的導(dǎo)電機(jī)理有關(guān),其導(dǎo)電主要是靠過(guò)剩的碘離子及銅空位,但是當(dāng)?shù)饬窟^(guò)高時(shí),會(huì)導(dǎo)致碘單質(zhì)剩余,容易附著在CuI薄膜的表面,影響CuI薄膜的透過(guò)性。2.利用真空熱蒸發(fā)法制備CuI薄膜,研究發(fā)現(xiàn)襯底加熱溫度是影響其性能的關(guān)鍵因素。XRD測(cè)試表明所制備的CuI薄膜是γ-相的多晶薄膜,并且具有極高的(111)擇優(yōu)取向,在襯底加熱溫度為120°C時(shí),可見(jiàn)光透過(guò)率的最大值接近100%,是目前文獻(xiàn)報(bào)道的最好透光率。最低電阻率是1.0×10-2Ω·cm,對(duì)應(yīng)的載流子濃度和霍爾遷移率分別是3.0×1019cm-3和25 cm2/Vs。3.對(duì)電化學(xué)沉積法制備ZnO薄膜的形貌進(jìn)行了探究,通過(guò)調(diào)節(jié)電化學(xué)沉積前驅(qū)體溶液濃度,分別獲得了三種不同形貌的ZnO:薄膜、納米線和納米片。在導(dǎo)電襯底上生長(zhǎng)的不同氧化鋅薄膜可以用作光陽(yáng)極來(lái)組裝染料敏化太陽(yáng)能電池(DSSC)。電池的光電轉(zhuǎn)換效率、量子效率及電化學(xué)阻抗譜測(cè)試表明,氧化鋅納米線具有較大的比表面積,可吸附較多染料;納米線陣列的散射作用可提高光的利用率,并為光生載流子的收集提供了快速分離通道,所以用ZnO納米線作為光陽(yáng)極組裝的DSSC具有最高的光電轉(zhuǎn)換效率。4.根據(jù)ZnO、N719和CuI的電子親和勢(shì)和禁帶寬度,理論確定了ZnO|dye|CuI型固態(tài)染料敏化電池能帶圖,組裝的電池性能測(cè)試結(jié)果表明,真空熱蒸發(fā)法是最佳的CuI薄膜沉積方式,最優(yōu)的ZnO納米線長(zhǎng)度為2μm,電池最優(yōu)效率為0.34,仍需進(jìn)一步優(yōu)化提高。
[Abstract]:Copper iodide (CuI) has three main crystal structures, of which 緯 -CuI is a wide bandgap p-type semiconductor material with a band gap of 3.1 EV, transparent in the visible range and low in resistivity. Suitable for LED and dye sensitized battery and other optoelectronic devices. In this paper, Cui thin films were prepared by iodization of copper films and vacuum thermal evaporation. The effects of different growth conditions on the transparent and conductive properties of CuI thin films were investigated. And it is applied to all solid state dye sensitized battery. The specific research contents and results are as follows: 1. Cui thin films were prepared by copper film iodization. The effects of different experimental conditions on the morphology, crystal structure, transmittance and electrical properties of copper films were studied. The results show that the preparation conditions of copper films have little effect on the properties of CuI thin films, and iodine content is the key factor affecting the properties of CuI thin films during iodization, which is related to the conductive mechanism of CuI films, and its conduction is mainly due to excess iodine ions and copper vacancies. However, when the iodine content is too high, it will lead to iodine single substance surplus, which will easily adhere to the surface of CuI thin film, and affect the transmittance of Cui thin film. 2. Cui thin films were prepared by vacuum thermal evaporation. It was found that the substrate heating temperature was the key factor affecting the properties of CuI thin films. XRD test showed that the CuI thin films were polycrystalline in 緯 -phase and had a very high (111) preferred orientation. At the substrate heating temperature of 120 擄C, the maximum transmittance of visible light is close to 100, which is the best transmittance reported in the literature. The lowest resistivity is 1.0 脳 10 ~ (-2) 惟 cm, the corresponding carrier concentration and Hall mobility are 3.0 脳 1019cm-3 and 25 cm ~ 2 / V 路s. 3, respectively. The morphology of ZnO thin films prepared by electrochemical deposition was studied. By adjusting the concentration of precursor solution, three kinds of ZnO films with different morphologies were obtained: thin films, nanowires and nanowires. Different ZnO thin films grown on conductive substrates can be used as photoanodes to assemble dye sensitized solar cells (DSSC). The photoelectricity conversion efficiency, quantum efficiency and electrochemical impedance spectroscopy of the battery show that ZnO nanowires have large specific surface area and can absorb more dyes, and the scattering effect of nanowire array can improve the utilization of light. Therefore, the DSSC assembled with ZnO nanowires as photoanode has the highest photoelectric conversion efficiency. According to the electron affinity potential and band gap of ZnON719 and CuI, the energy band diagram of ZnON719 and CuI solid dye sensitized battery is theoretically determined. The test results of the performance of the assembled cells show that the vacuum thermal evaporation method is the best method for depositing Cui thin films. The optimal length of ZnO nanowires is 2 渭 m and the optimal efficiency of the cell is 0.34, which still needs to be further optimized.
【學(xué)位授予單位】：濟(jì)南大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TQ131.21;TB383.2

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相關(guān)期刊論文 前1條

1 江浩;胡俊青;顧鋒;李春忠;;花狀ZnO超細(xì)結(jié)構(gòu)的水熱自組裝[J];無(wú)機(jī)材料學(xué)報(bào);2009年01期

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本文編號(hào)：2098714