發(fā)布時(shí)間：2018-05-28 10:42

  本文選題：氧化鎢 + 導(dǎo)電玻璃��； 參考：《華中科技大學(xué)》2015年碩士論文

【摘要】：WO3作為一種特殊的半導(dǎo)體材料,禁帶寬度較窄,可以吸收利用可見(jiàn)光范圍內(nèi)的太陽(yáng)光,并且具有優(yōu)異的光催化性能和氣體敏感性能,目前受到人們的廣泛關(guān)注。因此本研究期望合成具有不同微觀結(jié)構(gòu)的氧化物膜并對(duì)其光電流進(jìn)行測(cè)試和研究,探究氧化鎢內(nèi)載流子的輸運(yùn)機(jī)制,為實(shí)現(xiàn)對(duì)其宏觀性能的調(diào)控打下基礎(chǔ)。本文通過(guò)水熱法在經(jīng)過(guò)激光刻蝕的導(dǎo)電玻璃(FTO)上一步法可控制備WO3膜器件,改變了傳統(tǒng)器件的形態(tài),最大限度的保持了材料的原有形貌,并通過(guò)改變輔助劑的種類直接實(shí)現(xiàn)對(duì)氧化鎢形貌的調(diào)控。研究結(jié)果表明,采用K2SO4為輔助劑時(shí)合成的為納米棒狀氧化鎢,合成的納米棒長(zhǎng)約800 nm,寬約100 nm,厚約50 nm。而輔助劑為(NH4)2C2O4的體系呈現(xiàn)納米塊特征,合成的納米塊長(zhǎng)約600 nm,厚約100nm。在實(shí)現(xiàn)了對(duì)氧化鎢形貌調(diào)控的基礎(chǔ)上,本研究考查了不同氣氛下的熱處理過(guò)程對(duì)氧化鎢納米板膜的光電性能的影響。結(jié)果發(fā)現(xiàn),沒(méi)有經(jīng)過(guò)退火處理的氧化鎢樣品的光電流幅值是經(jīng)過(guò)氫化處理的樣品的2.5倍,而氫化處理的樣品的光電流幅值是在空氣中退火處理的樣品的17倍。結(jié)果證實(shí)可以通過(guò)熱處理過(guò)程調(diào)控材料的內(nèi)部結(jié)構(gòu),從而實(shí)現(xiàn)材料對(duì)太陽(yáng)能的有效利用。最后,在前面熱處理的基礎(chǔ)上,引入Pt參量,考查了Pt修飾和氣氛處理的耦合作用效果。本研究在實(shí)驗(yàn)中分別測(cè)試了干燥空氣和甲醛氣氛下氧化鎢樣品的光電響應(yīng)性能。結(jié)果表明經(jīng)過(guò)Pt修飾和氫化處理的氧化鎢樣品不僅表現(xiàn)出在光照下對(duì)甲醛氣體高的敏感度(其敏感度值15.8約是沒(méi)有經(jīng)過(guò)二者耦合處理樣品的15倍),同時(shí)還表現(xiàn)出在暗態(tài)條件下最高的電響應(yīng)性能(在暗態(tài)下電流達(dá)到10-7數(shù)量級(jí))。實(shí)驗(yàn)結(jié)果證實(shí)可以通過(guò)將Pt修飾和氫化處理進(jìn)行耦合實(shí)現(xiàn)器件的敏感性能的提高同時(shí)也為在低耗能下實(shí)現(xiàn)對(duì)甲醛檢測(cè)提供了可能性。
[Abstract]:As a special semiconductor material, WO3 has a narrow band gap, which can absorb and utilize the visible solar light, and has excellent photocatalytic performance and gas sensitivity. Therefore, this study is expected to synthesize oxide films with different microstructure, test and study their photocurrent, explore the transport mechanism of carriers in tungsten oxide, and lay a foundation for the regulation of their macroscopic properties. In this paper, the WO3 film devices are prepared by one step controlled method on the laser etched conductive glass by hydrothermal method, which changes the shape of the traditional devices and keeps the original morphology of the materials to the maximum extent. The morphology of tungsten oxide can be controlled directly by changing the kinds of auxiliary agents. The results show that nanorod tungsten oxide is synthesized by using K2SO4 as auxiliary agent. The nanorods are about 800nm in length, 100nm in width and 50nm in thickness. The auxiliary agent was NH _ 4N _ 2C _ 2O _ 4 system with nano-block characteristics. The synthesized nano-block was about 600 nm in length and 100 nm in thickness. On the basis of controlling the morphology of tungsten oxide, the effect of heat treatment in different atmosphere on the optoelectronic properties of tungsten oxide nanoplate was investigated. The results show that the photocurrent amplitude of tungsten oxide samples without annealing is 2.5 times of that of hydrogenated samples, while the photocurrent amplitude of hydrogenated samples is 17 times that of annealed samples in air. The results show that the effective utilization of solar energy can be realized by controlling the internal structure of the material during heat treatment. Finally, the coupling effect of Pt modification and atmosphere treatment was investigated by introducing Pt parameters on the basis of the previous heat treatment. In this study, the photoelectric response properties of tungsten oxide samples in dry air and formaldehyde atmosphere were measured. The results show that the Pt modified and hydrogenated tungsten oxide samples not only exhibit a high sensitivity to formaldehyde gas under light (sensitivity value 15.8 is about 15 times higher than that of the samples without coupling treatment, but also show a high sensitivity to formaldehyde gas). The highest electrical response performance is obtained under dark condition (the current reaches 10-7 orders of magnitude in the dark state). The experimental results show that the sensor sensitivity can be improved by the coupling of Pt modification and hydrogenation, and it also provides the possibility for the detection of formaldehyde at low energy consumption.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TQ136.13;TB383.2

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本文編號(hào)：1946397