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ZnO納米陣列的可控制備

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  本文選題:ZnO + 納米陣列 ; 參考:《湖南師范大學(xué)》2015年碩士論文


【摘要】:ZnO在常溫時的禁帶寬度是3.37eV,激子束縛能是60meV,是重要的II-VI族直接帶隙寬禁帶半導(dǎo)體材料,其原料豐富、價格低廉,并擁有綠色環(huán)保、性能穩(wěn)定及抗輻射能力強等優(yōu)點使它在光電子器件、微電子器件、太陽能電池及激光器等領(lǐng)域有重要的應(yīng)用。本論文主要研究了在FTO透明導(dǎo)電玻璃上對ZnO納米陣列的可控制備,利用的是兩步法制備Zn O納米陣列,即首先在FTO透明導(dǎo)電玻璃上利用溶膠-凝膠法制備ZnO籽晶層,然后再用水熱法在籽晶層上制備ZnO納米陣列。溶膠-凝膠法對實驗儀器的要求不高,水熱法是在溶液中進(jìn)行化學(xué)反應(yīng)的方法,與其他方法相比,水熱法制備流程簡單、成本低廉,能夠在大面積的基底上實現(xiàn)ZnO納米陣列的均勻化生長。在制備Zn O的過程中,采用乙酸鋅[Zn(CH3COO)2·2H2O]作為鋅源,然后在冰醋酸及乙醇胺的共同作用下,溶于乙二醇甲醚此溶劑中,并于室溫環(huán)境中冷卻生成凝膠;之后再利用旋涂的方法把溶膠均勻涂覆于FTO透明導(dǎo)電玻璃上,通過熱處理方法制備ZnO薄膜。在制備ZnO納米陣列中,采用乙酸鋅[Zn(CH3COO)2·2H2O]和六次甲基四胺(C6H12N4)在熱介質(zhì)中溶解;溶解后的鋅鹽乙酸鋅[Zn(CH3COO)2·2H2O]與堿液以離子、分子的形式存在于溶液中,最后冷卻形成飽和溶液,隨后再形成晶粒,最后結(jié)晶生成ZnO納米陣列。利用X射線衍射(XRD)、掃描電子顯微鏡(SEM)及紫外-可見分光光度計(UVS)等表征方法,對ZnO納米陣列的晶體結(jié)構(gòu)、光學(xué)特性及其表面形貌進(jìn)行了研究分析,探討了不同的籽晶層層數(shù)、不同的鋅源(Zn2+)濃度、不同的制備時間及不同鋅堿比(Zn2+/OH-)等對ZnO納米陣列的影響,對Zn O納米陣列最佳制備工藝的采取了深入研究,實現(xiàn)ZnO納米陣列的可控制備,從而獲得高質(zhì)量的ZnO納米陣列。通過實驗得出Zn O納米陣列的最佳制備條件:配制的前驅(qū)體溶液的鋅源用乙酸鋅,鋅離子(Zn2+)濃度為0.15mol/L,鋅堿比(Zn2+/OH-)為5:1,水浴反應(yīng)時間為1.5小時,水浴溫度為900C,其可見光區(qū)的透過率能達(dá)75%。
[Abstract]:The band gap width of ZnO is 3.37eV at room temperature, and the exciton binding energy is 60meV. It is an important direct band gap wide band gap semiconductor material of II-VI family. It is rich in raw materials, low in price and green in environmental protection. The advantages of stable performance and strong radiation resistance make it have important applications in optoelectronic devices, microelectronic devices, solar cells and lasers. In this paper, the controllable preparation of ZnO nanoarrays on FTO transparent conductive glass was studied. The ZnO nanorods were prepared by two-step method. Firstly, the ZnO seed layer was prepared on FTO transparent conductive glass by sol-gel method. Then the ZnO nanoarrays were prepared on the seed layer by hydrothermal method. The sol-gel method is not required for experimental instruments. Hydrothermal method is a method for chemical reaction in solution. Compared with other methods, hydrothermal method is simple in preparation process and low in cost. ZnO nanoarrays can be homogenized on a large area of substrate. In the preparation of Zno, zinc acetate [Zn(CH3COO)2 2H2O] was used as the source of zinc, and then dissolved in ethylene glycol methyl ether in the presence of glacial acetic acid and ethanolamine, and cooled at room temperature to form a gel. Then the sol was uniformly coated on FTO transparent conductive glass by spin-coating method and ZnO thin films were prepared by heat treatment. In the preparation of ZnO nanoarrays, zinc acetate [Zn(CH3COO)2 2H2O] and hexamethylenetetramine C6H12N4) were dissolved in a hot medium, and the dissolved zinc salt zinc acetate [Zn(CH3COO)2 2H2O] and lye existed in the form of ions and molecules in the solution, and finally cooled to form a saturated solution. Then the grains are formed and the ZnO nanoscale arrays are formed by crystallization. The crystal structure, optical properties and surface morphology of ZnO nanoarrays were studied by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Vis spectrophotometer (UV). The effects of different Zn ~ (2 +) concentration, different preparation time and Zn ~ (2 / OH-) ratio on ZnO nanowires were studied. The optimal preparation process of Zn-O nanoarrays was studied, and the controllable preparation of ZnO nanoarrays was realized. In order to obtain high quality ZnO nanoarrays. The optimum preparation conditions were obtained as follows: zinc acetate, Zn ~ (2 +), Zn ~ (2 +) = 0.15 mol / L, Zn ~ (2 / O) = 5: 1, water bath reaction time 1.5 hours, Zn ~ (2 / O) = 5: 1, Zn ~ (2 +) = 0.15 mol 路L ~ (-1), Zn ~ (2 +) / O _ (2) = 5: 1, water bath time = 1.5 hours. The water bath temperature is 900C, and the transmittance of visible region can reach 75cm.
【學(xué)位授予單位】:湖南師范大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2015
【分類號】:TQ132.41;TB383.1

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 田志宏;張秀華;田志廣;;X射線衍射技術(shù)在材料分析中的應(yīng)用[J];工程與試驗;2009年03期

相關(guān)碩士學(xué)位論文 前1條

1 熊華波;ZnO場發(fā)射性能研究[D];電子科技大學(xué);2005年

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