本文選題：硫化鎘 + 場(chǎng)效應(yīng)晶體管�。� 參考：《湖北工業(yè)大學(xué)》2017年碩士論文

【摘要】：目前,微電子超大集成電路的特征尺寸已經(jīng)從深亞微米級(jí)發(fā)展到納米尺度。隨著電子器件集成度的進(jìn)一步提高,微電子器件物理和工藝面臨諸如器件加工極限、加工費(fèi)用的成倍增加以及器件工作原理發(fā)生變化等一系列嚴(yán)峻挑戰(zhàn),成為未來微電子工業(yè)發(fā)展的瓶頸。而以量子輸運(yùn)機(jī)制為主導(dǎo)的固態(tài)量子器件,即納米電子器件,相比于傳統(tǒng)器件,其具有靈敏度高、能耗低、尺寸小、易集成的優(yōu)點(diǎn)成為目前研究的熱點(diǎn)。金屬顆粒局域表面等離激元耦合半導(dǎo)體發(fā)光增強(qiáng)在光電探測(cè)和光催化等領(lǐng)域具有廣泛的應(yīng)用前景。本論文基于硫化鎘(CdS)這種重要的II-VI族化合物低維半導(dǎo)體材料,制備了單根CdS納米帶器件并研究了S離子摻雜對(duì)其光電性能的影響;結(jié)合光刻技術(shù)對(duì)金屬納米顆粒與樹枝狀CdS復(fù)合結(jié)構(gòu)進(jìn)行了原位光學(xué)性能研究。本論文主要圍繞以下三個(gè)部分相關(guān)研究?jī)?nèi)容展開:(1)研究了不同形貌低維CdS納米結(jié)構(gòu)的制備方法。通過化學(xué)氣相沉積法制備了CdS納米線、納米帶和樹枝狀的CdS納米結(jié)構(gòu),得到不同形貌低維CdS納米結(jié)構(gòu)的生長(zhǎng)工藝。(2)研究了S離子摻雜對(duì)單根CdS納米帶器件光電性能影響研究。通過化學(xué)氣相沉積法在硅基底上制備了CdS納米帶,將不同劑量的S離子注入到CdS納米帶中,并對(duì)CdS納米帶進(jìn)行表征,分析其晶體結(jié)構(gòu),并進(jìn)一步通過光電性能的測(cè)試,研究S離子注入引入的缺陷對(duì)CdS納米帶性能產(chǎn)生的影響。結(jié)果表明,S離子注入引入的缺陷使CdS納米帶晶體質(zhì)量發(fā)生變化,導(dǎo)致S離子注入后CdS納米帶的激子發(fā)光峰減弱,缺陷發(fā)光峰增強(qiáng),并且它們之間的強(qiáng)度比隨著注入劑量的改變可以進(jìn)行調(diào)節(jié)。最后,通過對(duì)單根CdS納米帶場(chǎng)效應(yīng)晶體管的轉(zhuǎn)移特性曲線進(jìn)行分析,證明了S離子注入引入的缺陷對(duì)CdS納米帶電學(xué)性能有較大影響,并進(jìn)一步分析討論了其對(duì)電學(xué)性能影響的原因。(3)結(jié)合光刻技術(shù)對(duì)金屬納米顆粒與樹枝狀CdS復(fù)合結(jié)構(gòu)進(jìn)行原位光學(xué)性能研究。通過熱蒸發(fā)技術(shù)在樹枝狀CdS納米結(jié)構(gòu)沉積不同厚度的Au納米顆粒。結(jié)合光刻技術(shù)研究同一根樹枝狀CdS的光學(xué)性能。與純的三維樹枝狀的CdS納米結(jié)構(gòu)相比,不同厚度的Au納米顆粒會(huì)導(dǎo)致三維樹枝狀CdS光致發(fā)光(PL)增強(qiáng)或淬滅。PL增強(qiáng)是由于Au納米顆粒的局部表面等離激元共振(LSPR)效應(yīng),導(dǎo)致電子空穴對(duì)復(fù)合幾率增加從而使得PL發(fā)光增強(qiáng)。而PL淬滅是由于Au納米顆粒變大導(dǎo)致光散射增強(qiáng),另一個(gè)方面當(dāng)Au與CdS接觸時(shí),由于Au的功函數(shù)要比CdS的低電子將會(huì)從CdS到Au納米顆粒轉(zhuǎn)移,導(dǎo)致電子空穴對(duì)復(fù)合幾率減小從而發(fā)生淬滅。這種方法可適用于不同的低維納米結(jié)構(gòu),對(duì)于原位性能研究具有重要的研究意義。
[Abstract]:At present, the characteristic size of microelectronic VLSI has developed from deep sub-micron to nano-scale. With the further improvement of the integration of electronic devices, the physics and technology of microelectronic devices are facing a series of severe challenges, such as the device processing limit, the multiplicity of processing costs and the changes in the principle of device operation, etc. Become the bottleneck of the development of microelectronics industry in the future. Compared with the traditional devices, the solid-state quantum devices, which are dominated by quantum transport mechanism, have the advantages of high sensitivity, low energy consumption, small size and easy integration. The enhancement of semiconductor luminescence on the local surface of metal particles has a wide application prospect in the fields of photoelectricity detection and photocatalysis. Based on cadmium sulfide (CDs), an important low-dimensional semiconductor material of II-VI family compounds, a single CdS nanostrip device was prepared and the effect of S ion doping on its photoelectric properties was investigated. The in situ optical properties of metal nanoparticles and dendritic CdS composite structures were investigated by photolithography. In this thesis, the preparation methods of low dimensional CdS nanostructures with different morphologies were studied by using the following three parts. CdS nanowires, nanobelts and dendritic CdS nanostructures were prepared by chemical vapor deposition (CVD). The effects of S ion doping on the optoelectronic properties of single CdS nanobelts were investigated. CdS nanobelts were prepared on silicon substrate by chemical vapor deposition method. Different doses of S ions were implanted into CdS nanobelts. The CdS nanobelts were characterized, their crystal structures were analyzed, and the photoelectric properties were tested. The effects of defects introduced by S ion implantation on the properties of CdS nanobelts were investigated. The results show that the crystal quality of CdS nanobelts is changed due to the defects introduced by S + implantation, which leads to the decrease of exciton emission peak and the enhancement of defect luminescence peak of CdS nanobelts after S ion implantation. And the intensity ratio between them can be adjusted with the dose of implantation. Finally, by analyzing the transfer characteristic curve of a single CdS nanbbon field-effect transistor, it is proved that the defects introduced by S ion implantation have a great influence on the CdS nano-charged properties. The reason for its influence on electrical properties was discussed. The in situ optical properties of metal nanoparticles and dendritic CdS composite structures were studied by means of photolithography and photolithography. Au nanoparticles with different thickness were deposited in dendritic CdS nanostructures by thermal evaporation. The optical properties of the same dendritic CdS were studied by photolithography. Compared with the pure three-dimensional dendritic CdS nanostructures, different thickness au nanoparticles can lead to enhanced or quenched PL enhancement of three-dimensional dendritic CdS due to the local surface isoexciton resonance (LSP) effect of au nanoparticles. The photoluminescence is enhanced by increasing the recombination probability of the electron hole pair. The PL quenching is due to the increase of light scattering due to the enlargement of au nanoparticles. Another aspect is that when au is in contact with CdS, the work function of au will transfer from CdS to au nanoparticles because the work function of au is lower than that of CdS. The recombination probability of electron hole pair decreases and quenching occurs. This method can be applied to different low dimensional nanostructures and has important significance for in situ performance research.
【學(xué)位授予單位】：湖北工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TQ132.44

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本文編號(hào)：1911699