發(fā)布時(shí)間：2018-05-14 01:38

  本文選題：GaN納米線 + 稀土元素��； 參考：《新疆大學(xué)》2015年碩士論文

【摘要】：GaN是一種重要的寬帶隙藍(lán)光半導(dǎo)體材料,其低維納米結(jié)構(gòu)在納米光電子器件構(gòu)造中有廣泛的應(yīng)用前景。通過(guò)摻雜來(lái)調(diào)控GaN納米材料的物性,具有重要的科學(xué)意義和技術(shù)價(jià)值。本論文對(duì)Ce摻雜GaN納米線的生長(zhǎng)和物性進(jìn)行了研究,獲得了以下主要結(jié)果:一、采用化學(xué)氣相沉積(CVD)法,分別以Ga2O3和CeO2、金屬Ga和CeCl3為反應(yīng)源,高溫NH3氣氛下,以Au為催化劑制備出Ce摻雜的GaN納米線,對(duì)產(chǎn)物進(jìn)行了X射線衍射(XRD)、掃描電子顯微術(shù)(SEM)、透射電子顯微術(shù)(TEM)、選區(qū)電子衍射(SAED)、能量色散譜(EDS)、Raman散射和光致發(fā)光譜(PL)測(cè)試表征。結(jié)果顯示,以Ga2O3和CeO2為源所得產(chǎn)物是六方晶系纖鋅礦型GaN單晶納米線,形貌均勻,結(jié)晶性良好,PL譜表明隨著預(yù)摻雜濃度的增加,產(chǎn)物的近帶邊發(fā)射峰輕微地紅移;以金屬Ga和CeCl3為源所得產(chǎn)物同樣是六方晶系纖鋅礦型GaN單晶納米線,但形貌均勻性降低,PL譜表明隨著預(yù)摻雜濃度的增加,GaN的帶邊發(fā)射峰紅移,峰強(qiáng)度減弱,且在396.9nm位置處產(chǎn)生一個(gè)較弱的發(fā)射帶。二、采用固態(tài)燒結(jié)擴(kuò)散法,通過(guò)兩步合成Ce摻雜的GaN納米線。第一步:利用CVD制備純的GaN納米線,第二步:使用第一步獲得的純GaN納米線通過(guò)固態(tài)燒結(jié)擴(kuò)散法制備Ce摻雜的GaN納米線。對(duì)產(chǎn)物進(jìn)行了XRD、SEM、TEM、SAED、EDS、XPS和PL測(cè)試表征。結(jié)果顯示,所得產(chǎn)物是六方晶系纖鋅礦型GaN單晶納米線,結(jié)晶性良好,長(zhǎng)時(shí)間的固態(tài)燒結(jié)能夠促使更多的Ce元素?cái)U(kuò)散到GaN晶格中,納米線表面出現(xiàn)非晶層。隨著固態(tài)燒結(jié)擴(kuò)散時(shí)間的延長(zhǎng),Ce元素在納米線中實(shí)現(xiàn)了均勻分布。PL譜表明Ce摻雜GaN納米線的帶邊發(fā)射峰出現(xiàn)了明顯的紅移。以上工作,以不同的實(shí)驗(yàn)方法實(shí)現(xiàn)了稀土元素Ce摻雜GaN納米線的生長(zhǎng),對(duì)材料的形貌、結(jié)構(gòu)和光學(xué)性質(zhì)進(jìn)行了研究,所得結(jié)果未見(jiàn)到文獻(xiàn)報(bào)道,對(duì)GaN納米線摻雜改性的研究將有積極的參考借鑒價(jià)值。
[Abstract]:GaN is an important wide band gap blue semiconductor material, and its low-dimensional nanostructures have a wide application prospect in the fabrication of nano-optoelectronic devices. It is of great scientific significance and technical value to regulate the physical properties of GaN nanomaterials by doping. In this paper, the growth and physical properties of ce doped GaN nanowires are studied. The main results are as follows: firstly, Ga2O3 and CEO _ 2, Ga and CeCl3 are used as reaction sources, respectively, in high temperature NH3 atmosphere. Ce doped GaN nanowires were prepared using au as catalyst. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAEDN), energy dispersion spectroscopy (EDS) and photoluminescence spectroscopy (PL). The results show that the products obtained from Ga2O3 and CeO2 are hexagonal wurtzite single crystal nanowires with uniform morphology and good crystallinity. The near band emission peaks shift slightly with the increase of predoping concentration. The products obtained from Ga and CeCl3 are also hexagonal wurtzite GaN single crystal nanowires. However, the decrease of morphology uniformity and PL spectra show that the peak intensity decreases with the increase of pre-doping concentration in the band edge emission peak of gan. A weaker emission band is generated at the 396.9nm position. Second, ce doped GaN nanowires were synthesized by solid sintering diffusion method. In the first step, pure GaN nanowires were prepared by CVD. In the second step, ce doped GaN nanowires were prepared by solid-state sintering diffusion method using the pure GaN nanowires obtained in the first step. The products were characterized by XPS and PL. The results show that the product is hexagonal wurtzite type GaN single crystal nanowires with good crystallinity. Long time solid sintering can promote the diffusion of more ce elements into the GaN lattice and the amorphous layer appears on the surface of the nanowires. The uniform distribution of ce in nanowires with the increase of the diffusion time of solid sintering shows that the emission peaks of ce doped GaN nanowires exhibit a red shift. The growth of rare earth element ce doped GaN nanowires has been achieved by different experimental methods. The morphology, structure and optical properties of the materials have been studied. The results have not been reported in the literature. The study on the doping modification of GaN nanowires will have positive reference value.
【學(xué)位授予單位】：新疆大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TQ133.51;TB383.1

【參考文獻(xiàn)】

相關(guān)期刊論文 前2條

1 李栓慶;;第三代電子材料——氮化鎵[J];半導(dǎo)體情報(bào);1996年05期

2 高春華;納米材料的基本效應(yīng)及其應(yīng)用[J];江蘇理工大學(xué)學(xué)報(bào)(自然科學(xué)版);2001年06期

，

本文編號(hào)：1885766