本文選題：高品質(zhì)金剛石膜 + 高功率MPCVD裝置　； 參考：《太原理工大學(xué)》2015年碩士論文

【摘要】：化學(xué)氣相沉積（CVD）高品質(zhì)的金剛石膜具有優(yōu)異的物理、化學(xué)和機(jī)械性能，因此在許多高技術(shù)領(lǐng)域有著廣闊的應(yīng)用前景。微波等離子體化學(xué)氣相沉積（MPCVD）法是制備高品質(zhì)金剛石膜的首選方法，但是由于沉積速率低、成本高，導(dǎo)致這種高性能的膜材料無(wú)法得到廣泛的應(yīng)用。通過(guò)大幅度升高沉積氣體的壓強(qiáng)，能夠提高金剛石膜的沉積速率，但是會(huì)減小沉積面積。而兼顧速率和面積，則需要大幅度升高M(jìn)PCVD裝置所能容納的功率。由于目前現(xiàn)有的裝置，都存在不同的導(dǎo)致工作功率不能提高的缺點(diǎn)，所以本文選擇高功率MPCVD裝置的研發(fā)作為研究課題。 首先，本文對(duì)高品質(zhì)CVD金剛石膜、MPCVD金剛石膜裝置的發(fā)展進(jìn)行了論述，對(duì)不同類型的MPCVD裝置的優(yōu)缺點(diǎn)進(jìn)行了討論，在此基礎(chǔ)上結(jié)合高功率MPCVD金剛石膜裝置通常需要滿足的基本條件，提出一種兼顧目前裝置優(yōu)點(diǎn)的命名為TYUT型的新型MPCVD裝置模型。然后，使用模擬軟件，依照電場(chǎng)位置、狀態(tài)和強(qiáng)度對(duì)裝置的基本尺寸和關(guān)鍵部件尺寸進(jìn)行了模擬和優(yōu)化。其次，本文對(duì)可能造成裝置失諧的因素進(jìn)行了系統(tǒng)模擬分析，并使用模擬軟件對(duì)裝置設(shè)計(jì)的調(diào)諧機(jī)構(gòu)的性能進(jìn)行了模擬驗(yàn)證。模擬結(jié)果表明，微波頻率偏差、諧振腔加工誤差、基片高度的變化等都會(huì)造成裝置的失諧，而所設(shè)計(jì)的調(diào)諧機(jī)構(gòu)能夠?qū)崿F(xiàn)調(diào)諧。這些數(shù)值模擬研究結(jié)果為TYUT型MPCVD金剛石膜沉積裝置的建立奠定了基礎(chǔ)。 根據(jù)模擬優(yōu)化的結(jié)果，本文建立了TYUT型的MPCVD裝置。通過(guò)實(shí)驗(yàn)測(cè)試表明，，所建立的裝置不但能夠容納很高的微波功率（＞9kW），而且具有優(yōu)良的調(diào)諧功能。利用所建造的裝置，本文分別進(jìn)行了高功率、高氣體壓強(qiáng)條件下的沉積實(shí)驗(yàn)。實(shí)驗(yàn)所制備的直徑40mm金剛石膜的沉積速率達(dá)到12μm/h，厚度不均勻性＜5%；直徑65mm大面積金剛石膜的沉積速率達(dá)到5.6μm/h，厚度不均勻性＜6%。兩種金剛石膜均具有很高的品質(zhì)。該實(shí)驗(yàn)結(jié)果表明，TYUT型的MPCVD裝置具有優(yōu)良的性能，達(dá)到了設(shè)計(jì)的目的，能夠滿足設(shè)計(jì)高功率密度條件下大面積高品質(zhì)金剛石膜的均勻、快速沉積。
[Abstract]:Chemical Vapor deposition (CVD) high quality diamond film has excellent physical, chemical and mechanical properties, so it has a wide application prospect in many high-tech fields. Microwave plasma chemical vapor deposition (MPCVD) is the preferred method for the preparation of high quality diamond films. However, due to the low deposition rate and high cost, this high performance film material can not be widely used. By increasing the pressure of the deposited gas, the deposition rate of diamond film can be increased, but the deposition area will be reduced. However, it is necessary to increase the power capacity of the MPCVD device greatly by considering both the speed and the area. Because the existing devices all have different shortcomings which lead to the improvement of the working power, so the research and development of the high power MPCVD device is selected as the research topic in this paper. Firstly, the development of high quality CVD diamond film device is discussed, and the advantages and disadvantages of different MPCVD devices are discussed. On the basis of this, a new type of MPCVD device named TYUT is proposed, which takes into account the advantages of high power MPCVD diamond film device and the basic conditions that usually need to be satisfied. Then, the basic size and key component size of the device are simulated and optimized according to the position, state and strength of the electric field using the simulation software. Secondly, the factors which may cause the detuning of the device are simulated and analyzed systematically, and the performance of the tuning mechanism designed by the device is simulated and verified by using the simulation software. The simulation results show that microwave frequency deviation, cavity machining error and substrate height change will result in the detuning of the device, and the designed tuning mechanism can be tuned. These numerical simulation results lay a foundation for the establishment of TYUT type MPCVD diamond film deposition device. According to the result of simulation and optimization, the TYUT type MPCVD device is established in this paper. The experimental results show that the device can not only accommodate high microwave power (> 9 kW), but also have excellent tuning function. In this paper, deposition experiments under high power and high gas pressure were carried out by using the device. The deposition rate of diameter 40mm diamond film is 12 渭 m / h and the thickness inhomogeneity is less than 5, and the deposition rate of diameter 65mm large area diamond film is 5.6 渭 m / h, and the thickness inhomogeneity is less than 6 渭 m / h. Both kinds of diamond films have high quality. The experimental results show that the TYUT type MPCVD device has excellent performance and achieves the purpose of design. It can meet the requirements of uniform and rapid deposition of large area and high quality diamond films under the conditions of high power density design.
【學(xué)位授予單位】：太原理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TQ127.11

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