本文選題：碘化亞銅 + 銅膜碘化法　； 參考：《魯東大學(xué)》2017年碩士論文

【摘要】：近年來,一些銅系化合物材料,如氧化銅(CuO)、氧化亞銅(Cu2O)、硫氰酸亞銅(CuSCN)、碘化亞銅(CuI),由于其優(yōu)異的p型導(dǎo)電特性,在半導(dǎo)體光電器件領(lǐng)域表現(xiàn)出潛在的應(yīng)用前景,引起了人們越來越多的關(guān)注。這些材料其晶體內(nèi)部存在大量點缺陷而產(chǎn)生銅空位受主能級,從而表現(xiàn)出p型導(dǎo)電特性。其中,CuI作為一種直接寬帶隙(Eg=3.1eV)半導(dǎo)體材料,具有較高的激子束縛能(62meV)和較小的空穴有效質(zhì)量,同時可以獲得較高的載流子濃度和空穴遷移率。此外,CuI還具有在可見光區(qū)透過率高、無毒、儲量豐富、成本低廉的優(yōu)點,成為短波長發(fā)光器件和光電探測器件領(lǐng)域新的研究熱點。本文分別利用銅膜碘化法和低溫溶液合成等方法制備了CuI薄膜及納米結(jié)構(gòu)材料,研究CuI的結(jié)晶質(zhì)量和發(fā)光特性;并利用脈沖激光沉積技術(shù)(PLD)在CuI薄膜上外延生長了高質(zhì)量的氧化鋅(ZnO)薄膜,構(gòu)造了p-CuI/n-ZnO異質(zhì)結(jié)復(fù)合結(jié)構(gòu),研究了該異質(zhì)結(jié)的光電特性。論文的主要結(jié)果為:1.利用銅膜碘化法分別在硅(100)襯底和石英襯底上制備了CuI薄膜。掃描電子顯微鏡(SEM)和X射線衍射譜(XRD)結(jié)果表明,CuI薄膜具有較高的結(jié)晶質(zhì)量,沿(111)晶向擇優(yōu)生長;光致發(fā)光(PL)光譜測試發(fā)現(xiàn),其發(fā)光峰包含410nm、420nm和700nm附近的三個發(fā)光峰。分別研究了Cu膜厚度和退火工藝對CuI薄膜的光致發(fā)光性能的影響機制,并解釋了其發(fā)光機理。研究了室溫下CuI薄膜的光學(xué)性質(zhì)和電學(xué)性質(zhì),實驗結(jié)果表明,CuI薄膜在可見光區(qū)域(400nm~760nm)透過率超過60%。2.利用低溫溶液合成法在硅(100)襯底上制備了CuI納米結(jié)構(gòu),研究了其結(jié)構(gòu)特性和發(fā)光特性。并創(chuàng)新性的發(fā)展了一種利用水熱反應(yīng)制備CuI納米結(jié)構(gòu)的方法。XRD和SEM對樣品形貌和結(jié)構(gòu)分析表明,CuI納米結(jié)構(gòu)呈閃鋅礦結(jié)構(gòu),擇優(yōu)生長晶面為(111);通過改變實驗條件,CuI樣品形貌表現(xiàn)出納米片、納米顆粒、納米線和納米團(tuán)簇等結(jié)構(gòu);PL測試顯示,其光致發(fā)光峰主要集中在410nm、420nm和700nm三個位置。3.利用脈沖激光沉積技術(shù)(PLD)在硅襯底上制備ZnO薄膜,通過優(yōu)化制備參數(shù),研究了生長條件對ZnO薄膜結(jié)構(gòu)和發(fā)光特性的影響。在CuI薄膜上外延生長了高質(zhì)量的氧化鋅(ZnO)薄膜,構(gòu)造了p-CuI/n-ZnO異質(zhì)結(jié)復(fù)合結(jié)構(gòu),研究了CuI/ZnO薄膜復(fù)合層的光致發(fā)光特性和PN結(jié)整流特性。結(jié)果表明,復(fù)合層在可見光范圍內(nèi)表現(xiàn)出較寬的發(fā)光特性,在白光LED器件方面具有一定的應(yīng)用前景;此外,異質(zhì)結(jié)的電學(xué)特性測試結(jié)果表明,p-CuI/n-ZnO異質(zhì)結(jié)具有一定的整流特性,在±2V時的整流比約為13.3,可應(yīng)用于短波長紫外探測器件。
[Abstract]:In recent years, some copper-based compound materials, such as cupric oxide, Cu2OO, CuSCN thiocyanate and CuIN iodide, have shown potential applications in the field of semiconductor optoelectronic devices due to their excellent p-type conductivity.It has attracted more and more attention.There are a large number of defects in the crystal of these materials resulting in the formation of copper vacancy acceptor energy levels, thus showing a p-type conductivity.As a kind of direct wide band gap Egg 3.1eV) semiconductor material, Cui has higher exciton binding energy (62meV) and smaller hole effective mass, at the same time, higher carrier concentration and hole mobility can be obtained.In addition, Cui has the advantages of high transmittance in visible light region, non-toxic, abundant reserves and low cost, so it has become a new research hotspot in the field of short-wavelength light-emitting devices and photodetectors.In this paper, CuI films and nanostructured materials were prepared by copper film iodization and low temperature solution synthesis, respectively. The crystallization quality and luminescence characteristics of CuI were studied.High quality ZnO ZnO thin films were epitaxially grown on CuI thin films by pulsed laser deposition technique. The p-CuI/n-ZnO heterojunction composite structure was constructed. The photoelectric properties of the heterojunction were studied.The main result of this paper is 1: 1.CuI thin films were prepared on silicon (100) substrates and quartz substrates by copper film iodization method.The results of scanning electron microscopy (SEM) and X-ray diffraction (XRD) show that the thin films have high crystallization quality and grow in the preferred direction along the crystal direction of Cu 111, and the photoluminescence spectra show that the photoluminescence peaks consist of 410nm and 420nm and three peaks near 700nm.The effects of Cu film thickness and annealing process on the photoluminescence properties of CuI films were investigated, and the luminescence mechanism was explained.The optical and electrical properties of CuI thin films at room temperature have been studied. The experimental results show that the transmittance of the CuI thin films exceeds 60.2 in the visible region.CuI nanostructures were prepared on Si (100) substrates by low temperature solution synthesis. The structure and luminescence properties of CuI nanostructures were investigated.An innovative method for preparing CuI nanostructures by hydrothermal reaction was developed. The morphology and structure analysis of the samples by SEM showed that the nanocrystalline CuI nanostructures were sphalerite structures.The photoluminescence peaks of the preferred growth crystal plane are 410nm ~ 420nm and 700nm ~ (-3) by changing the experimental conditions. The photoluminescence peaks are mainly located at 410nm ~ (420 nm) and 700nm ~ (-3) by means of photoluminescence (PL) measurements of nanoscale, nanocrystalline, nanowires and nanoclusters, and the results show that the photoluminescence peaks are mainly at 410nm and 420nm, respectively.ZnO thin films were prepared on silicon substrates by pulsed laser deposition. The effects of growth conditions on the structure and luminescence characteristics of ZnO thin films were studied by optimizing the preparation parameters.High quality zinc oxide (ZnO) thin films were epitaxially grown on CuI thin films, and p-CuI/n-ZnO heterojunction composite structures were constructed. The photoluminescence characteristics and PN junction rectifying characteristics of CuI/ZnO thin films were studied.The results show that the composite layer exhibits wide luminescence characteristics in the visible range, and has a certain application prospect in white light LED devices, in addition, the electrical properties of the heterojunction show that the p-CuI / n-ZnO heterojunction has a certain rectifying property.The rectifier ratio is about 13.3 at 鹵2V, which can be used in short wavelength UV detector.
【學(xué)位授予單位】：魯東大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TQ131.21

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