本文選題：直流非平衡磁控濺射　切入點：強流脈沖離子束　出處：《大連交通大學》2015年碩士論文

【摘要】：隨著現(xiàn)代科技的進步和工業(yè)化的發(fā)展,非晶碳薄膜因其優(yōu)良的性能已經(jīng)廣泛的被應(yīng)用到各個領(lǐng)域。由于非晶碳膜具有高的電阻率和較強的絕緣性,使其在電學、微電子領(lǐng)域有著很好的應(yīng)用,可作為光刻電路板的掩膜,在大規(guī)模生產(chǎn)集成電路的過程中起著不可替代的作用。具有良好化學穩(wěn)定性的非晶碳膜,在場發(fā)射性能方面研究的較多,研究發(fā)現(xiàn)不會對其他元器件造成污染且在發(fā)射過程中電流穩(wěn)定。非晶碳薄膜制備常規(guī)方法如化學氣相沉積(CVD)、微波沉積法,等離子體電沉積,脈沖輝光PECVD以及物理沉積方式如磁控濺射、離子注入。相比傳統(tǒng)的物理氣相沉積,直流非平衡磁控濺射和強流脈沖離子束方法因為其特有的工作原理及鮮明的技術(shù)優(yōu)勢成為替代的主要手段。本文論述了薄膜技術(shù)的發(fā)展,介紹了國內(nèi)外非晶碳薄膜研究進展,模擬了碳離子注入硅及金屬基體的擴散過程、離子分布以及入射射程,在此基礎(chǔ)上進一步研究了直流非平衡磁控濺射制備非晶碳膜的原理、工藝,并對制備的非晶碳膜進行了檢測分析。對所制備的樣品進行了真空退火處理,檢測分析了退火后的非晶碳薄膜。運用取向附生法,即應(yīng)用強流脈沖離子束技術(shù)輻照不同的基體,利用生長基質(zhì)原子結(jié)構(gòu)“種”出大量碳原子,通過真空退火處理使之前吸收的大量碳原子浮到基體表面,對最終它們可長成完整的一層石墨烯的可能性進行了研究。實驗結(jié)果表明,采用直流非平衡磁控濺射在不同基體材料上制備了非晶碳薄膜,經(jīng)過真空退火處理后非晶碳膜薄膜組織內(nèi)應(yīng)力得到緩解,表面變得光亮,表面形貌發(fā)生了變化表面形貌發(fā)生了變化,通過對比分析得出,制備非晶碳薄膜最佳工藝為工藝四,其經(jīng)800℃真空退火后薄膜表面平整、致密效果好。經(jīng)強流脈沖離子束(HIPIB)輻照后的樣品表面形貌發(fā)生了變化,碳元素含量升高,樣品表面粗糙度明顯升高。對輻照后硅樣品的截面進行了線掃描,碳離子注入的深度與掃描得出的深度基本一致。對真空退火后鉺試樣表面進行掃描和EDS分析,發(fā)現(xiàn)樣品表面形貌發(fā)生了變化,碳元素含量進一步升高。
[Abstract]:With the progress of modern science and technology and the development of industrialization, amorphous carbon films have been widely used in various fields because of their excellent properties.Because of its high resistivity and strong insulation, amorphous carbon film has a good application in the field of electricity and microelectronics. It can be used as mask of lithography circuit board and plays an irreplaceable role in the large-scale production of integrated circuit.The amorphous carbon films with good chemical stability have been studied in the field emission performance. It is found that there is no pollution to other components and the current is stable during the emission process.Conventional methods such as chemical vapor deposition microwave deposition plasma electrodeposition pulsed glow PECVD and physical deposition methods such as magnetron sputtering and ion implantation are used to prepare amorphous carbon films.Compared with the traditional physical vapor deposition, DC unbalanced magnetron sputtering and intense pulsed ion beam methods have become the main alternative because of their unique working principles and distinct technical advantages.In this paper, the development of thin film technology is reviewed, and the research progress of amorphous carbon film at home and abroad is introduced. The diffusion process, ion distribution and incident range of carbon ion implanted silicon and metal substrate are simulated.On this basis, the principle and process of the preparation of amorphous carbon films by DC unbalanced magnetron sputtering are further studied, and the amorphous carbon films prepared are tested and analyzed.The samples were annealed in vacuum and the amorphous carbon films after annealing were examined and analyzed.In this paper, we use the orientation epigenetic method, that is, the intense pulsed ion beam technique is used to irradiate different substrates, and the atomic structure of the growth matrix is used to "breed" a large number of carbon atoms. By vacuum annealing, a large number of previously absorbed carbon atoms float to the surface of the matrix.The possibility that they could eventually grow into a complete layer of graphene was studied.The experimental results show that amorphous carbon films are deposited on different substrates by DC unbalanced magnetron sputtering. After vacuum annealing, the internal stress of amorphous carbon films is alleviated and the surface becomes bright.The surface morphology of amorphous carbon thin films was changed. The results showed that the best process for preparing amorphous carbon thin films was process four. The surface of amorphous carbon films annealed at 800 鈩，

本文編號：1702835