本文選題：慣性約束聚變　切入點：硼靶　出處：《原子能科學(xué)技術(shù)》2017年10期

【摘要】：在慣性約束聚變研究中,硼的柱形微靶可作為黑腔填充材料。本文通過電火花銑削加工技術(shù),采用含碳較高的電介質(zhì),利用導(dǎo)電性能較好的鎢鋼作電極材料,實現(xiàn)了半導(dǎo)體硼柱形微靶加工。通過奧林巴斯測量顯微鏡對硼柱直徑進行了測量,測量結(jié)果表明,硼柱的直徑加工精度可控制在小于±10μm。采用掃描電鏡對形貌進行了分析,結(jié)果表明,加工前后硼的表面形貌未改變。通過能譜分析了硼柱表面的導(dǎo)電層成分及通過X射線能譜(XPS)分析了碳元素價態(tài),結(jié)果表明,電火花銑削加工過程中,由于電介質(zhì)分解生成游離態(tài)的碳及電極材料熔融后沉積在硼表面,形成輔助導(dǎo)電層,通過對輔助導(dǎo)電層加工,產(chǎn)生的瞬時高溫使硼熔融氣化,從而實現(xiàn)對半導(dǎo)體硼的加工。
[Abstract]:In inertial confinement fusion, boron columnar targets can be used as black cavity filling materials.In this paper, semiconductor boron columnar microtarget machining is realized by means of EDM technology, using dielectric with high carbon content and tungsten steel with good conductivity as electrode material.The diameter of boron column was measured by Olympus measuring microscope. The results show that the machining accuracy of boron column is less than 鹵10 渭 m.The morphology of boron was analyzed by scanning electron microscope. The results showed that the surface morphology of boron remained unchanged before and after processing.The composition of conducting layer on the surface of boron column was analyzed by energy spectrum, and the valence state of carbon element was analyzed by X-ray energy dispersive spectroscopy (XPS). The results show that, in the process of EDM,Due to the decomposition of dielectric and the deposition of free carbon and electrode materials on the surface of boron after melting, the auxiliary conductive layer is formed. By processing the auxiliary conductive layer, the boron is melted and vaporized by the instantaneous high temperature, thus the processing of semiconductor boron is realized.
【作者單位】： 中國工程物理研究院激光聚變研究中心;
【基金】：中國工程物理研究院超精密加工重點實驗室基金資助項目(ZZ2012002) 科學(xué)挑戰(zhàn)計劃專題資助項目(0006)
【分類號】：TQ128.1

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本文編號：1690225