本文選題：硬質(zhì)薄膜　切入點(diǎn)：等離子體增強(qiáng)磁控濺射　出處：《遼寧科技大學(xué)》2015年碩士論文

【摘要】：隨著科學(xué)技術(shù)的逐漸發(fā)展,在制造業(yè),鑄造業(yè)等行業(yè)中的作業(yè)條件愈趨極端,這就對使用工具的品質(zhì)提出了更高的要求。要求工具表面有好的耐磨性、抗腐蝕性和抗氧化性。在工具表面鍍上一層硬質(zhì)薄膜能夠恰好的解決這個問題。硬質(zhì)薄膜的制備方法有物理氣相沉積(PVD)、化學(xué)氣相沉積(CVD)。而物理氣相沉積中又分為真空蒸發(fā)鍍膜、磁控濺射鍍膜和電弧離子鍍鍍膜三類。本論文的研究工作主要有兩個部分,第一個是以磁控濺射法制備TiN薄膜為例,來進(jìn)行磁控濺射設(shè)備的安裝,調(diào)試和初步實(shí)驗(yàn)。等離子體增強(qiáng)磁控濺射設(shè)備的核心部分是熱導(dǎo)絲的放電,本設(shè)備以磁控濺射為基礎(chǔ),設(shè)備主要有真空系統(tǒng),電路系統(tǒng),濺射系統(tǒng)組成,設(shè)備調(diào)試的關(guān)鍵是在于,調(diào)整一定的氮?dú)夂蜌鍤獾谋壤?在電路系統(tǒng)能承受的范圍內(nèi)進(jìn)行高效率的沉積薄膜,最后應(yīng)用此設(shè)備試制了氮化鈦薄膜,確保這個真空系統(tǒng)的穩(wěn)定性和可復(fù)制性,從而為工業(yè)生產(chǎn)提供足夠、可靠的依據(jù)。第二部分是對于失效的氮化鈦薄膜進(jìn)行退除薄膜的研究。在堿性溶液(NaOH)環(huán)境下配合雙氧水(H2O2)、葡萄糖酸鈉(GA)、十二烷基磺酸鈉(SDS)、三聚磷酸鈉(STPP),可有效的使工具鋼表面TiN薄膜脫落且不影響基體的二次鍍膜。在NaOH與二水合檸檬酸三鈉作為電解液,采用電化學(xué)方法能夠推出Cr N薄膜。實(shí)驗(yàn)表征方法有掃描電子顯微鏡(SEM)來觀察薄膜的結(jié)構(gòu),臺階儀來測量薄膜的厚度,X射線衍射儀(XRD)來了解薄膜的相組成以各組元成分,顯微硬度儀來檢測基體以及鍍覆上薄膜后基體硬度。實(shí)驗(yàn)結(jié)果表明磁控濺射設(shè)備真空倉為1M3,采用單靶濺射,控制濺射速率在磁滯回線內(nèi),Ar:N2=80:7,電流為5A,靶電壓為385V,燈絲電流在4A時,能結(jié)合成致密金黃色TiN薄膜。
[Abstract]:With the development of science and technology, the working conditions in manufacturing, foundry industry and other industries are becoming more and more extreme, which puts forward higher requirements for the quality of tools used. Corrosion resistance and oxidation resistance. Coating a hard film on the tool surface can exactly solve this problem. The hard film is prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD) and vacuum evaporation. Magnetron sputtering and arc ion plating are three kinds of coatings. In this paper, there are two main parts of the research work. The first is to use magnetron sputtering method to prepare TiN film as an example to install the magnetron sputtering equipment. The core part of plasma enhanced magnetron sputtering equipment is the discharge of thermal conductance wire. The equipment is based on magnetron sputtering. The equipment consists of vacuum system, circuit system and sputtering system. The key to debugging the equipment is to adjust the ratio of nitrogen to argon, and to deposit the film efficiently within the range of the circuit system. Finally, the titanium nitride film is produced by using this equipment. To ensure the stability and reproducibility of this vacuum system, thus providing sufficient supply for industrial production, Reliable basis. The second part is the study on the removal of the failed titanium nitride thin film. In the alkaline solution NaOH) environment, the mixture of hydrogen peroxide, sodium gluconate, sodium dodecyl sulfonate, sodium dodecyl sulfonate and sodium tripolyphosphate can be effectively used to remove the film, which can be used in the presence of hydrogen peroxide, sodium gluconate, sodium dodecyl sulfonate and sodium tripolyphosphate. The TiN film on the tool steel surface is shedding and does not affect the substrate. In the presence of NaOH and sodium citrate dihydrate as electrolyte, The structure of Cr N thin films can be observed by means of scanning electron microscope (SEM), and the thickness of the films is measured by a step meter (X ray diffractometer XRD) to understand the phase composition of the films and the composition of each component. The experimental results show that the vacuum chamber of the magnetron sputtering equipment is 1M3, the sputtering rate is controlled in the hysteresis loop, the current is 5A, the target voltage is 385V, and the filament current is 4A. It can be combined to form a dense golden TiN film.
【學(xué)位授予單位】：遼寧科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TQ134.11;TB383.2

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本文編號：1661445