本文選題：熱絲化學(xué)氣相沉積　切入點：納米金剛石膜　出處：《武漢工程大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：納米金剛石膜不僅具有與常規(guī)微米金剛石膜接近或相同的性能,而且具有晶粒尺寸小、表面光潔度高、摩擦系數(shù)小、更好的場發(fā)射性能以及易于研磨拋光的優(yōu)點,因而能彌補微米金剛石膜的不足,拓展金剛石膜的應(yīng)用領(lǐng)域。而目前納米金剛石膜的生長速率和生長質(zhì)量都還有待提高,因此,研究高生長速率和高生長質(zhì)量納米金剛石膜的制備具有很重要的意義。為了制備納米金剛石膜,主要研究了利用熱絲CVD法在H2/CH3COCH3體系和在Ar/H2/CH3COCH3體系中的生長工藝,并對熱絲化學(xué)氣相沉積金剛石膜進(jìn)行了發(fā)射光譜診斷,分析研究其生長機理。在H2/CH3COCH3體系制備納米金剛石膜的實驗中,主要研究了碳源濃度及襯底溫度對制備納米金剛石膜的影響。在Ar/H2/CH3COCH3體系制備納米金剛石膜的實驗中,則主要研究了Ar濃度、反應(yīng)氣壓、碳源濃度及襯底溫度對制備納米金剛石膜的影響。在Ar/H2/CH3COCH3生長體系中,納米金剛石膜的生長速率和生長質(zhì)量均高于H2/CH3COCH3生長體系,這是因為Ar的引入有效地提高了體系中的等離子濃度,增加了二次形核率,有利于細(xì)化晶粒尺寸,加快生長速率。此外,對熱絲化學(xué)氣相沉積金剛石膜進(jìn)行了發(fā)射光譜診斷,在Ar/H2/CH3COCH3生長體系中,CH、C2濃度比Ar/H2/CH4生長體系更高,且出現(xiàn)有利于刻蝕石墨相的含氧基團,Ar所獲得的激發(fā)能量更高,譜線波長短,且在3.5 kPa反應(yīng)氣壓下CH基團的濃度最大。
[Abstract]:Nanocrystalline diamond films not only have the same or similar properties as conventional micron diamond films, but also have the advantages of small grain size, high surface finish, small friction coefficient, better field emission performance and easy to grind and polishing. Therefore, it can make up for the shortage of micron diamond film and expand the application field of diamond film. However, the growth rate and quality of nanocrystalline diamond film need to be improved at present. It is of great significance to study the preparation of nanocrystalline diamond films with high growth rate and high growth quality. In order to prepare nanocrystalline diamond films, the growth process of nanocrystalline diamond films using hot-filament CVD method in H2/CH3COCH3 system and Ar/H2/CH3COCH3 system was studied. The emission spectrum of hot-filament chemical vapor deposition diamond film was analyzed and its growth mechanism was studied. In the experiment of preparing nano-diamond film with H2/CH3COCH3 system, The effects of carbon source concentration and substrate temperature on the preparation of nanocrystalline diamond films were studied. In the experiment of preparing nanocrystalline diamond films in Ar/H2/CH3COCH3 system, the concentration of ar and reaction pressure were studied. The effects of carbon source concentration and substrate temperature on the preparation of nanocrystalline diamond films were investigated. The growth rate and quality of nanocrystalline diamond films in Ar/H2/CH3COCH3 system were higher than those in H2/CH3COCH3 system. This is because the introduction of ar can effectively increase the plasma concentration in the system, increase the secondary nucleation rate, refine the grain size and accelerate the growth rate. In addition, the emission spectrum diagnosis of the hot filament chemical vapor deposition diamond film is carried out. In Ar/H2/CH3COCH3 growth system, the concentration of CHC _ 2 is higher than that of Ar/H2/CH4, and the excitation energy is higher, the wavelength of spectrum is shorter, and the concentration of Ch group is the largest at 3.5 kPa reaction pressure.
【學(xué)位授予單位】：武漢工程大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TQ163;TB383.2

【相似文獻(xiàn)】

相關(guān)期刊論文 前10條

1 華麗;從情報價值分析納米金剛石在表面工程中的應(yīng)用[J];金剛石與磨料磨具工程;2004年06期

2 ;科學(xué)家揭開“納米金剛石”的秘密[J];超硬材料工程;2005年06期

3 華麗;;納米金剛石的開發(fā)與應(yīng)用概述[J];金剛石與磨料磨具工程;2006年03期

4 孫景;江雷;杜希文;雷貽文;翟琪;楊星;;激光轟擊法制備納米金剛石的提純研究[J];炭素技術(shù);2006年04期

5 靳洪允;侯書恩;楊曉光;;納米金剛石拋光液制備及應(yīng)用[J];金剛石與磨料磨具工程;2007年03期

6 秦宇;王光祖;;發(fā)展中的中國納米金剛石應(yīng)用技術(shù)[J];超硬材料工程;2007年04期

7 陸靜;王艷輝;臧建兵;;納米金剛石表面準(zhǔn)原子層沉積硅鍍層[J];超硬材料工程;2007年06期

8 崔仲鳴;楊予勇;王光祖;;納米金剛石作為拋光材料的應(yīng)用[J];機械工程與自動化;2008年04期

9 王光祖;崔仲嗚;;納米金剛石作為拋光材料的應(yīng)用[J];石材;2011年03期

10 ;俄研制出制備納米金剛石的新方法[J];延邊大學(xué)學(xué)報(自然科學(xué)版);2011年04期

相關(guān)會議論文 前10條

1 李靜;諸穎;張小勇;李文新;黃慶;;納米金剛石作為中藥活性成分胞內(nèi)運輸載體的研究[A];第二屆中草藥提取關(guān)鍵技術(shù)與提取物產(chǎn)業(yè)應(yīng)用研討會論文集[C];2009年

2 許向陽;朱永偉;王柏春;沈湘黔;;納米金剛石在水介質(zhì)中的分散與穩(wěn)定[A];2002年材料科學(xué)與工程新進(jìn)展（上）——2002年中國材料研討會論文集[C];2002年

3 李汝R，

本文編號：1645563