本文選題：前驅(qū)體　切入點：裂解　出處：《宇航材料工藝》2016年03期 　論文類型：期刊論文

【摘要】：以聚鋁氧烷為鋁源,聚硼硅氮烷兼作硼源和硅源,共混得到SiBAlON陶瓷前驅(qū)體,經(jīng)高溫裂解得到SiBAlON陶瓷。采用TGA和XRD對SiBAlON前驅(qū)體的裂解行為及陶瓷產(chǎn)物晶相結構進行表征。結果表明,Al的引入降低了陶瓷的結晶溫度,當陶瓷中的Al含量為10wt%時,1 300℃處理后析出β-Si_3N_4晶體,1 500℃時,陶瓷中的Al和O與無定型的Si-N結合生成出現(xiàn)Si_2N_2O和Si_3Al_3O_(3+1.5x)N_(5-x)結晶,1 700℃時Al和O與結晶的β-Si_3N_4固溶生成β’-SiAlON結晶,最終陶瓷產(chǎn)物晶相組成為Si_2N_2O/Si_3Al_3O_(3+1.5x)N_(5-x)/β’-SiAlON。對陶瓷的介電性能進行研究表明,溫度1 000℃時,其介電常數(shù)和介電損耗較為穩(wěn)定,分別約為3和0.004。
[Abstract]:The SiBAlON ceramic precursor was prepared by using polyaluminoxane as aluminum source and polyborosilane as boron and silicon source. SiBAlON ceramics were obtained by pyrolysis at high temperature. The pyrolysis behavior of SiBAlON precursors and the crystal structure of the ceramic products were characterized by TGA and XRD. The results showed that the introduction of Al reduced the crystallization temperature of the ceramics. When Al content in ceramics was 10 wt%, after treatment at 1 300 鈩，

本文編號：1617850