本文選題：單顆磨粒劃擦　切入點(diǎn)：單晶碳化硅　出處：《機(jī)械工程學(xué)報(bào)》2017年15期 　論文類型：期刊論文

【摘要】：以單晶碳化硅(Si C)作為加工對(duì)象,通過(guò)不同尖端圓角半徑的圓錐型金剛石磨粒劃擦試驗(yàn)觀察了單晶Si C的去除過(guò)程,并采用FEM與SPH耦合算法模擬仿真了三種不同尖端圓角半徑的單顆磨粒劃擦Si C過(guò)程中的材料去除過(guò)程,試驗(yàn)結(jié)果與模擬結(jié)果基本一致。在此基礎(chǔ)上,采用仿真手段從最大等效應(yīng)力和接觸力的角度分析了三種不同尖端圓角半徑對(duì)單晶碳化硅材料脆塑轉(zhuǎn)變過(guò)程材料去除機(jī)理的影響。仿真結(jié)果表明:隨著尖端圓角半徑的增加,彈塑性變形-塑脆臨界的轉(zhuǎn)變點(diǎn)趨近于0.14μm,而且純粹的塑性變形模式逐漸消失;脆塑臨界去除模式所占的區(qū)域逐漸變長(zhǎng),由脆塑臨界-脆性去除的轉(zhuǎn)變點(diǎn)的深度也在不斷變深;脆塑轉(zhuǎn)變過(guò)程中的微裂紋的長(zhǎng)度及粗細(xì)程度逐漸增加,材料破壞的形式也逐漸升級(jí)。
[Abstract]:The single crystal silicon carbide (Si C) as the processing object, through different conical diamond tip radius abrasive scratch test to observe the removal process of Si single crystal C, and using FEM and SPH coupling algorithm simulation of the removal process of three different tip radius of the single abrasive scratch Si C process materials, test results and simulation results are basically consistent. On this basis, using the simulation method from the maximum equivalent stress and contact stress analysis of the effects of three different tip radius removal mechanism of brittle ductile transition process of materials of single crystal silicon carbide materials. The simulation results show that with the increase of tip radius, elastic-plastic deformation - critical ductile brittle transition point close to 0.14 m, and the pure plastic deformation mode gradually disappear; brittle plastic removal mode for critical areas gradually long, by the brittle ductile transition critical brittle removal The depth of the point is also deepened, and the length and the thickness of the micro cracks in the brittle plastic transition gradually increase, and the form of material destruction is gradually upgraded.

【作者單位】： 華僑大學(xué)脆性材料加工技術(shù)教育部工程研究中心;
【基金】：國(guó)家自然科學(xué)基金(51575197,51375179) 教育部博士點(diǎn)基金(20133501130001) 福建省教育廳重點(diǎn)(JA13010)資助項(xiàng)目
【分類號(hào)】：TQ127.2

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本文編號(hào)：1616398