本文選題：多晶硅　切入點：趨膚效應(yīng)　出處：《人工晶體學(xué)報》2017年10期 　論文類型：期刊論文

【摘要】：改良西門子法制備多晶硅過程中,化學(xué)氣相沉積所需能量全部由電流加熱硅棒提供。本文考慮多晶硅還原爐中輻射和對流熱量傳遞形式,耦合頻率控制的焦耳電加熱方程,建立了12對棒多晶硅還原爐熱場-電磁場耦合模型,并通過工業(yè)數(shù)據(jù)驗證了其模擬結(jié)果的合理性。分析了硅棒半徑、交流電頻率以及反應(yīng)器壁發(fā)射率對西門子還原爐內(nèi)、外硅棒內(nèi)部溫度及電流密度分布的影響。結(jié)果表明:當硅棒半徑增長到所用交流電頻率引起的趨膚深度時,交流電趨膚效應(yīng)開始顯著影響硅棒內(nèi)部溫度梯度;交流電頻率的增大,硅棒內(nèi)部溫度梯度逐漸減小;反應(yīng)器壁發(fā)射率增加,低頻時硅棒內(nèi)部溫差增大,而高頻時發(fā)射率對硅棒內(nèi)部溫度分布影響不再顯著。
[Abstract]:In the process of preparing polycrystalline silicon by modified Siemens method, the energy required for chemical vapor deposition is provided by the current heated silicon rod. In this paper, the radiation and convection heat transfer in the polysilicon reduction furnace and the coupling frequency controlled Joule electric heating equation are considered. The coupling model of thermal field and electromagnetic field of 12 pairs of rods polysilicon reduction furnace is established, and the rationality of the simulation results is verified by industrial data. The radius of silicon rod, alternating current frequency and the emissivity of reactor wall to Siemens reduction furnace are analyzed. The results show that when the radius of silicon rod increases to the skin depth caused by the used AC frequency, the skin effect of alternating current begins to affect the internal temperature gradient of silicon rod. With the increase of alternating current frequency, the internal temperature gradient of silicon rod decreases gradually, the emissivity of reactor wall increases, the temperature difference increases at low frequency, but the influence of high frequency emittance on the internal temperature distribution of silicon rod is not significant.
【作者單位】： 昆明理工大學(xué)復(fù)雜有色金屬資源清潔利用國家重點實驗室;昆明理工大學(xué)冶金與能源工程學(xué)院;昆明冶金研究院;
【基金】：國家自然科學(xué)基金地區(qū)項目(21566015) 中國博士后科學(xué)基金(2017M613281XB)
【分類號】：TQ127.2
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本文編號：1559813