發(fā)布時(shí)間：2018-02-04 21:33

  本文關(guān)鍵詞： 高活性氧化銅 制備 直接沉淀法 絡(luò)合沉淀法 水熱法　出處：《合肥工業(yè)大學(xué)》2015年碩士論文　論文類(lèi)型：學(xué)位論文

【摘要】：活性氧化銅現(xiàn)主要應(yīng)用于印制電路板電鍍銅工藝上。隨著印制電路板行業(yè)的持續(xù)發(fā)展,活性氧化銅的市場(chǎng)需求量也在不斷增長(zhǎng),同時(shí)也對(duì)活性氧化銅的產(chǎn)品質(zhì)量要求越來(lái)越高。本文研究利用三種不同的合成方法制備高活性氧化銅,比較得出了最佳生產(chǎn)工藝；并對(duì)生產(chǎn)過(guò)程所需的設(shè)備進(jìn)行了選型,經(jīng)濟(jì)效益進(jìn)行估算以及環(huán)保進(jìn)行了分析；同時(shí)利用X射線衍射(XRD)、掃描電子顯微鏡(SEM)、光學(xué)顯微鏡等手段對(duì)產(chǎn)品結(jié)構(gòu)與形貌進(jìn)行了表征。論文獲得的主要結(jié)果如下：(1)確定的由直接沉淀法制備高活性氧化銅的最佳工藝條件為：反應(yīng)溫度25℃,反應(yīng)時(shí)間2h,煅燒溫度400℃,助劑D。在此條件下制得的氧化銅活性為50s,純度達(dá)到99.4%；此工藝中銅的回收率達(dá)到98%；(2)確定的由絡(luò)合法制備高活性氧化銅的最佳工藝條件為：反應(yīng)溫度80℃,反應(yīng)時(shí)間2 h,煅燒溫度450℃,絡(luò)合劑C,助劑D。在此條件下制得的氧化銅活性為15s,純度達(dá)到99.5%；此工藝中銅的回收率達(dá)到98%；(3)確定的由水熱法制備高活性氧化銅的最佳工藝條件為：反應(yīng)溫度110℃,反應(yīng)時(shí)間12 h,煅燒溫度400℃,銅源Cu(NO3)2,助劑D。此條件下制得的氧化銅活性為12s,純度達(dá)到99.5%；此工藝中銅的回收率達(dá)到95%；(4)對(duì)三種合成方法得到的產(chǎn)品性能進(jìn)行比較,得出影響產(chǎn)品氧化銅活性的主要因素是產(chǎn)品形貌,顆粒間分散性及粒徑大小。綜合考慮產(chǎn)品的活性大小及合成方法的經(jīng)濟(jì)性,我們選擇絡(luò)合沉淀法作為本文最佳生產(chǎn)方法；(5)經(jīng)濟(jì)效益估算結(jié)果表明,由絡(luò)合沉淀法制備高活性氧化銅能產(chǎn)生良好的經(jīng)濟(jì)效益。環(huán)保分析結(jié)果表明,該生產(chǎn)工藝過(guò)程基本無(wú)三廢污染,為清潔環(huán)保工藝。
[Abstract]:Active copper oxide is mainly used in electroplating process of printed circuit board. With the continuous development of printed circuit board industry, the market demand of active copper oxide is also increasing. At the same time, the product quality of active copper oxide is higher and higher. In this paper, three different synthetic methods are used to prepare highly active copper oxide, and the optimum production process is obtained. The equipment needed in the production process is selected, the economic benefit is estimated and the environmental protection is analyzed. At the same time, X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used. The structure and morphology of the product were characterized by optical microscope. The main results obtained in this paper are as follows: 1). The optimum conditions for the preparation of highly active copper oxide by direct precipitation are as follows: reaction temperature 25 鈩，

本文編號(hào)：1491200