Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT(high-electron mobility transistor).GaN cap layers with gradual increase in the doping concentration from2 × 10¹⁶ to 5 × 10¹⁹ cm^-3 of N-type and P-type cap are investigated,respectively.Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentratio...

【文章頁數(shù)】：5 頁

【文章目錄】：
1. Introduction
2. Device structure and breakdown model
3. Results and discussions
4. Conclusion



本文編號：3844632