A novel Al Ga N/Ga N high electron mobility transistor(HEMT) with a source-connected T-shaped field-plate(ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate(ST-FP) is composed of a source-connected field-plate(S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-d...

【文章頁(yè)數(shù)】：5 頁(yè)


本文編號(hào)：3749487