The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor（HEMT） treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. Thes... 

【文章來源】：Chinese Physics B. 2017,26(01)EISCI

【文章頁數(shù)】：5 頁


本文編號：3521781