Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator（PDSOI）NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly correlates with the bias configuration during irradiation. It is found that the high body doping concentration can make the devices less sensitive to the single transistor latchup effect, and the onset drain voltage at which latchup occurs can degrade as the total dose level rises. The m... 

【文章來源】：Chinese Physics B. 2017,26(03)EISCI

【文章頁(yè)數(shù)】：7 頁(yè)


本文編號(hào)：3518544