In this paper,the enhancement-mode AlGaN/GaN HEMT combined with the low damage recessed-gate etching and the optimized oxygen plasma treatment was fabricated.Scanning electron microscope/energy dispersive spectrometer（SEM/EDS） method and x-ray photoelectron spectroscopy（XPS） method were used to confirm the formation of oxides.Based on the experimental results,the obtained enhancement-mode HEMT exhibited a threshold voltage of 0.5 V,a high peak transconductance of 210 mS/mm,and a maximum drain cu... 

【文章來源】：Chinese Physics B. 2016,25(11)EISCI

【文章頁數(shù)】：6 頁


本文編號：3481884