Impact of low/high-κ spacer–source overlap on characteristic
發(fā)布時(shí)間：2021-10-13 10:38
The effects of low-κ and high-κ spacer were investigated on the novel tunnel dielectric based tunnel field-effect transistor（TD-FET） mainly based upon ultra-thin dielectric direct tunneling mechanism. Drive currents consist of direct tunneling current and band-to-band tunneling（BTBT） current. Meanwhile, tunneling position of the TD-FET differs from conventional tunnel-FET in which the electron and hole tunneling occur at intermediate rather than surface in channel（or source-channel junction unde...
【文章來(lái)源】：Journal of Central South University. 2017,24(11)EISCICSCD
【文章頁(yè)數(shù)】：10 頁(yè)
本文編號(hào)：3434497
【文章來(lái)源】：Journal of Central South University. 2017,24(11)EISCICSCD
【文章頁(yè)數(shù)】：10 頁(yè)
本文編號(hào)：3434497
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