The effects of low-κ and high-κ spacer were investigated on the novel tunnel dielectric based tunnel field-effect transistor（TD-FET） mainly based upon ultra-thin dielectric direct tunneling mechanism. Drive currents consist of direct tunneling current and band-to-band tunneling（BTBT） current. Meanwhile, tunneling position of the TD-FET differs from conventional tunnel-FET in which the electron and hole tunneling occur at intermediate rather than surface in channel（or source-channel junction unde... 

【文章來源】：Journal of Central South University. 2017,24(11)EISCICSCD

【文章頁數(shù)】：10 頁


本文編號(hào)：3434497