In this work, we use a 3-nm-thick Al_0.64In_0.36N back-barrier layer in In_0.17Al_0.83 N/Ga N high-electron mobility transistor（HEMT） to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al_0.64In_0.36 N back-barrier on the direct-current（DC） and radio-frequency（RF） characteristics of In AlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of... 

【文章來源】：Chinese Physics B. 2017,26(10)EISCI

【文章頁數(shù)】：5 頁

【參考文獻(xiàn)】：
期刊論文
[1]晶格匹配InAlN/GaN HEMT溝道溫度評(píng)估方法研究[J]. 金寧,陳雷雷,曹艷榮,梁海蓮,閆大為,顧曉峰.  微電子學(xué). 2020(06)

碩士論文
[1]毫米波AlGaN/GaN/AlGaN雙異質(zhì)結(jié)HEMT研究[D]. 程志宏.西安電子科技大學(xué) 2020



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